Investigation of Phase Transformation and Optical Properties of TiO2 Thin Films Deposited by Electron Beam Evaporation

2014 ◽  
Vol 941-944 ◽  
pp. 1279-1282
Author(s):  
Lin Hua Xu ◽  
Gai Ge Zheng ◽  
Yu Lin Chen ◽  
Jing Su
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Anatase Phase ◽  
Visible Region ◽  
Electron Beam Evaporation ◽  
Atomic Force ◽  
Optical Bandgaps ◽  
Uv Visible

TiO2thin films were deposited by ion beam assisted electron beam evaporation and annealed at 200, 300, 400 and 500 ¡æ in air for one hour. The crystal structures and morphology of the samples were analyzed by an X-ray diffractometer and an atomic force microscope. The transmittance spectra were recorded by a UV-visible spectrophotometer. The results show that both the as-deposited TiO2thin film and that one annealed at 200 ¡æ are amorphous. The sample annealed at 300 ¡æ crystallizes in pure brookite phase and is preferentially oriented along the (121) plane. When the annealing temperature rises up to 400 and 500 ¡æ, TiO2thin films turn into pure anatase phase. All the samples exhibit high transmittance in the visible region. With the increase of annealing temperature, the transmittance slightly declines and the optical bandgaps also slightly decreases.

Synthesis of Nanodimensional TiO2 Thin Films

2008 ◽  
Vol 8 (8) ◽  
pp. 4231-4237 ◽  
Author(s):  
Madhavi Thakurdesai ◽  
T. Mohanty ◽  
J. John ◽  
T. K. Gundu Rao ◽  
Pratap Raychaudhuri ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Anatase Phase ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Glancing Angle ◽  
Photochromic Devices

Nanodimensional TiO2 has wide application in the field of photocatalysis, photovoltaic and photochromic devices. In present investigation TiO2 thin films deposited by pulsed laser deposition method are irradiated by 100 MeV Ag ion beam to achieve growth of nanophases. The nanostructure evolution is characterized by atomic force microscopy (AFM). The phases of TiO2 formed after irradiation are identified by glancing angle X-ray diffraction and Raman spectroscopy. The particle radius estimated by AFM varies from 10–13 nm. Anatase phase of TiO2 is formed after irradiation. The blue shift observed in UV-VIS absorption spectra indicates the nanostructure formation. The shape and size of nanoparticles formed due to high electronic excitation depend upon thickness of the film.

Anomalous phase formation during annealing of La2O3 thin films deposited by ion beam assisted electron beam evaporation

2009 ◽  
Vol 517 (5) ◽  
pp. 1677-1680 ◽  
Author(s):  
Chen Yang ◽  
Huiqing Fan ◽  
Yingxue Xi ◽  
Shaojun Qiu ◽  
Yunfei Fu
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Phase Formation ◽  
Ion Beam ◽  
Electron Beam Evaporation

scholarly journals Influence of annealing temperature on properties of Cu2O thin films deposited by electron beam evaporation

2018 ◽  
Vol 67 (5) ◽  
pp. 053301
Author(s):  
Li Hai-Tao ◽  
Jiang Ya-Xiao ◽  
Tu Li-Min ◽  
Li Shao-Hua ◽  
Pan Ling ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Cu2o Thin Films

scholarly journals Studies on structural, optical and electrical properties of electron beam evaporated Cu2SnSe3 thin films

2016 ◽  
Vol 34 (4) ◽  
pp. 703-707 ◽  
Author(s):  
P. Prathiba Jeya Helan ◽  
K. Mohanraj ◽  
G. Sivakumar
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Properties ◽  
Visible Region ◽  
Thin Film Deposition ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Raman Analysis

AbstractThe present work describes the deposition of semiconducting Cu2SnSe3 thin films by electron beam evaporation method. The structure of the deposited films was characterized by XRD and Raman analysis. X-ray diffraction study revealed that the Cu2SnSe3 thin films had a cubic sphalerite-like structure with crystallite size of 12 nm. Raman spectrum of the thin films confirmed the phase purity. FESEM analysis showed a continuous film with polydispersed grains of a diameter less than 1 цш and the elemental composition was confirmed by EDS spectrum. The UV-Vis spectrum revealed that the sample had high absorption in the visible region and the band gap was found to be 1.15 eV. The I-V graph exhibited the electrical resistivity and conductivity of the film as 2.13 Ω-cm and 0.468 S/cm, respectively. Thus, the electron beam evaporated Cu2SnSe3 thin films showed high purity of structure and good morphological, optical and electrical properties comparable with other methods of thin film deposition.

OPTICAL AND ELECTRICAL PROPERTIES OF La2O3 FILMS PREPARED BY ION BEAM ASSISTANT ELECTRON BEAM EVAPORATION

2008 ◽  
Vol 15 (03) ◽  
pp. 271-275 ◽  
Author(s):  
CHEN YANG ◽  
HUIQING FAN ◽  
SHAOJUN QIU ◽  
YINGXUE XI ◽  
YUNFEI FU
Keyword(s):  
Electron Beam ◽  
Near Infrared ◽  
Annealing Temperature ◽  
High Dielectric Constant ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Electron Beam Evaporation ◽  
Hexagonal Structure ◽  
Infrared Transmittance ◽  
High Dielectric

La 2 O 3 films were deposited on Si (100) substrates by ion beam assistant electron beam evaporation and were annealed at 450–900°C. Crystalline structure was found to change from amorphous structure to cubic and hexagonal structure with the rise in annealing temperature. The near infrared transmittance of the film annealed at 600°C was relatively high and could be further increased using assistant ion beam in deposition. The maximum leakage current density increased dramatically from 10-7 to 10-4 A/cm2 with the rise in annealing temperature. The film annealed at 600°C with cubic structure had a relatively high dielectric constant of ~18.

Influence of Annealing Temperature on the Properties of Nanostructure ITO Thin Films Prepared by Ion-Assisted Electron Beam Evaporation

2008 ◽  
Vol 55-57 ◽  
pp. 373-376
Author(s):  
Artorn Pokaipisit ◽  
M. Horprathum ◽  
Pichet Limsuwan
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Surface Morphology ◽  
Crystallite Size ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
Visible Range ◽  
Glass Substrates ◽  
Ito Thin Films

The influence of annealing temperature on the optical and electrical properties, nanostructure and surface morphology of ITO thin films prepared by ion-assisted electron beam evaporation on the glass substrates has been studied. The resistivity and transmittance spectra were measured by a four-point probe method and spectrophotometer, respectively. The nanostructure and surface morphology were examined by X-ray diffractometer and atomic force microscopy. The results show that the ITO thin films with a thickness of 200 nm is amorphous. The crystallite size and optical band gap of ITO thin films increased after annealing in vacuum at different temperatures from 200 to 350 oC. At 350 oC, high quality crystalline thin films with a crystallite size of about 30 nm were obtained. The average optical transmittance was 84% in the visible range (400-700 nm) and the resistivity of 1.34 × 10-4 W-cm was obtained at a temperature of 350 oC.

Sign in / Sign up

Export Citation Format

Share Document