Effect of Charge Transferring Materials on Photoluminescence Properties of CdSe/ZnS Quantum Dots
The CdSe/ZnS core/shell quantum dots (QDs) were synthesized and characterized with absorption spectrometry, photoluminescence (PL) spectrometry and transmission electron microscopy. PL quenching of colloidal CdSe/ZnS QDs in the presence of charge transferring material was studied by means of steady-state and time-resolved PL spectroscopy. With increasing charge transferring materials concentration in the CdSe/ZnS QDs solution, the PL intensity and lifetime of CdSe/ZnS QDs decrease gradually. The quenching efficiency of CdSe/ZnS QDs decrease with increasing the oxidation potential of charge transferring materials. Based on the analysis, there are two pathways in the PL quenching process: static quenching and dynamic quenching. The dynamic quenching is correlated with hole transfer from QDs to the charge transferring materials.