X-Ray Microbeam Diffraction Studies of Large Strain Dislocation Substructure Formation in OFHC Copper

2000 ◽  
Vol 177-180 ◽  
pp. 165-170 ◽  
Author(s):  
G.C. Butler ◽  
Stuart R. Stock ◽  
David L. McDowell
Materialia ◽  
2021 ◽  
pp. 101042
Author(s):  
S.R. Das ◽  
S. Shyamal ◽  
T. Sahu ◽  
J.I. Kömi ◽  
P.C. Chakraborti ◽  
...  

2014 ◽  
Vol 778-780 ◽  
pp. 453-456 ◽  
Author(s):  
Masashi Nakabayashi ◽  
Tatsuo Fujimoto ◽  
Hiroshi Tsuge ◽  
Kiyoshi Kojima ◽  
Kozo Abe ◽  
...  

The room temperature residual stress of 4H-SiC wafers has been investigated using a precise X-ray diffraction method. A large strain was observed for the circumferential direction of wafers, more than ten times larger than those measured along the principal plane direction and the radial direction. Optimizing the lateral temperature distribution in growing crystals leads to reduction of residual stress of wafers with high crystal quality.


2001 ◽  
Vol 124 (1) ◽  
pp. 48-54 ◽  
Author(s):  
G. C. Butler ◽  
S. R. Stock ◽  
R. D. McGinty ◽  
D. L. McDowell

This paper assesses, via X-ray microbeam diffraction, the effects of development of dislocation substructure on the distribution of sub-grain misorientations in annealed OFHC copper deformed to large strains for compression, for shear, and for sequences of compression followed by shear. Polychromatic synchrotron x-radiation was used to study samples from four strain histories: virgin specimens, 50% effective strain in compression, 100% effective strain in torsion, and 50% compressive strain followed by 50% torsion. A very narrow beam illuminated an approximately 15 μm diameter column through the sample, and the microstructure of the specimens was mapped by translating the sample along two orthogonal axes perpendicular to the beam by increments of 10 μm. The beam diameter was considerably smaller than the average grain size in the virgin material. Both the degree of substructure formation and the nature of the distributed microstructure were quantified from the resulting Laue diffraction patterns. The polychromatic diffraction patterns of the polycrystalline samples consisted of well-defined streaks, and the azimuthal angular width of the streaks increased with plastic strain in a manner consistent with the scaling of the misorientation distribution of high angle boundaries for sub-grains reported recently using electron microscopy techniques limited to thin foils or thin surface layers. A lattice spin correction is introduced based on this scaling law in a simple extended Taylor scheme of polycrystal plasticity to achieve a retardation of texture development that is consistent with experimental results.


1983 ◽  
Vol 27 ◽  
pp. 363-368
Author(s):  
R. B. Roof

As part of a program studying the effects of large strain deformations resulting from multiaxial loading to a variety of materials, a thin walled tube (0.46” O.D. x 0.02” wall thickness) of 70-30 Brass was subjected to strain deformation in the following directions 1) along the tube axis, εz = 0.3393; 2) circumferential around the tube surface, εθ = -0.0121; 3) perpendicular to the wall thickness, εR = 0.3514. This report describes the results of an x-ray examination of the external surface of the tube by the line broadening technique.


10.14311/1666 ◽  
2012 ◽  
Vol 52 (6) ◽  
Author(s):  
Jan Kratochvíl ◽  
Martin Kružík

We formulate a problem of the evolution of elasto-plastic materials subjected to external loads in the framework of large deformations and multiplicative plasticity. We focus on a spontaneous inhomogenization interpreted as a structuralization process. Our model includes gradients of the plastic strain and of hardening variables which provide a relevant length scale of the model. A simple computational experiment interpreted as a hint of a deformation substructure formation is included.


1994 ◽  
Vol 356 ◽  
Author(s):  
Kyoung-Ik Cho ◽  
Sahn Nahm ◽  
Sang-Gi Kim ◽  
Seung-Chang Lee ◽  
Kyung-Soo Kim ◽  
...  

AbstractSi/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 ∼ 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 ∼ 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about − 8×l0−3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of − 4×l0−3 and large strain relaxation of 50%.


2016 ◽  
Vol 09 (03) ◽  
pp. 1650042 ◽  
Author(s):  
Usha Sait ◽  
Sreekumar Muthuswamy

Dielectric electro active polymer (DEAP) is a suitable actuator material that finds wide applications in the field of robotics and medical areas. This material is highly controllable, flexible, and capable of developing large strain. The influence of geometrical behavior becomes critical when the material is used as miniaturized actuation devices in robotic applications. The present work focuses on the effect of surface topography on the performance of flat (single sheet) and stacked-rolled DEAP actuators. The non-active areas in the form of elliptical spots that affect the performance of the actuator are identified using scanning electron microscope (SEM) and energy dissipated X-ray (EDX) experiments. Performance of DEAP actuation is critically evaluated, compared, and presented with analytical and experimental results.


1992 ◽  
Vol 280 ◽  
Author(s):  
A. Marty ◽  
B. Gilles ◽  
G. Patrat ◽  
J. C. Joud ◽  
A. Chamberod

ABSTRACTEpitaxial solid solutions Au1-x Nix (100) have been obtained at room temperature on Au(100) substrates by the MBE technique. The layers are 10 nm-thick and the composition x has been varied up to 0.37. A large strain (2–3%) has been measured by X-ray diffraction. The lattice parameters have been measured in two perpendicular directions, perpendicular and parallel to the surface. In the latest case, the grazing-incidence technique has been used. Because this technique is very sensitive to the surface, the strain results may be re-interpreted if, the upperlOO nm are enriched in Au.


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