Electrically Conductive Aluminum Nitride Ceramics Containing In-Situ Synthesized Boron Carbonitride

2006 ◽  
Vol 317-318 ◽  
pp. 653-656 ◽  
Author(s):  
Jun Yoshikawa ◽  
Yuji Katsuda ◽  
Naohito Yamada ◽  
Hiroaki Sakai

Electrically conductive AlN ceramics were fabricated by the addition of a small amount of B4C and sintering aid, and hot-press sintering in a nitrogen atmosphere. The electrical resistivity of AlN ceramics decreased remarkably from 1014 cm to the range of 100 to 102 cm by a minimum of 2.3 wt% of B4C addition. This resistivity decrease was caused by forming three-dimensional networks composed of boron carbonitride (B-C-N) platelets synthesized during sintering. To produce the networks of B-C-N platelets, two-step sintering with a heat-treatment step at 1600°C before the densification step at 2000°C was needed.

2008 ◽  
Vol 403 ◽  
pp. 49-52
Author(s):  
Naohito Yamada ◽  
Jun Yoshikawa ◽  
Yuji Katsuda ◽  
Hiroaki Sakai

Aluminum Nitride (AlN) ceramics are used as wafer heating plates and wafer holding electrostatic chucks in semiconductor fabrication equipments. For tailoring the electrical resistivity to satisfy the requirements of each component, several kinds of approaches were investigated for hot-pressed AlN ceramics. Three techniques to control the electrical resistivity of AlN ceramics were adopted: (1) AlN intragranular control, (2) intergranular phase control and (3) incorporation of electrically conductive second phase particles. In this paper, we introduce examples of each technique. The first one is addition of a small amount of Y2O3. The resistivity varied from 1015 Ωcm to 1010 Ωcm with the Y2O3 amount. The second one is addition of Sm2O3. The resistivity also varied from 1015 Ωcm to 1010 Ωcm with the Sm2O3 amount. The third one is incorporation of in-situ synthesized Boron Carbonitride (B-C-N). Networking of B-C-N platelets drastically decreased the resistivity to the range less than 102 Ωcm. By these techniques, it was possible to control the resistivity of AlN ceramics in a wide range with a small amount of additives.


Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 422
Author(s):  
Kuai Zhang ◽  
Yungang Li ◽  
Hongyan Yan ◽  
Chuang Wang ◽  
Hui Li ◽  
...  

An Fe/FeAl2O4 composite was prepared with Fe-Fe2O3-Al2O3 powder by a hot press sintering method. The mass ratio was 6:1:2, sintering pressure was 30 MPa, and holding time was 120 min. The raw materials for the powder particles were respectively 1 µm (Fe), 0.5 µm (Fe2O3), and 1 µm (Al2O3) in diameter. The effect of sintering temperature on the microstructure and mechanical properties of Fe/FeAl2O4 composite was studied. The results showed that Fe/FeAl2O4 composite was formed by in situ reaction at 1300 °C–1500 °C. With the increased sintering temperature, the microstructure and mechanical properties of the Fe/FeAl2O4 composite showed a change law that initially became better and then became worse. The best microstructure and optimal mechanical properties were obtained at 1400 °C. At this temperature, the grain size of Fe and FeAl2O4 phases in Fe/FeAl2O4 composite was uniform, the relative density was 96.7%, and the Vickers hardness and bending strength were 1.88 GPa and 280.0 MPa, respectively. The wettability between Fe and FeAl2O4 was enhanced with increased sintering temperature. And then the densification process was accelerated. Finally, the microstructure and mechanical properties of the Fe/FeAl2O4 composite were improved.


2005 ◽  
Vol 46 (9) ◽  
pp. 2041-2046 ◽  
Author(s):  
Mitsuo Kido ◽  
Tarou Tokuda ◽  
Rongguang Wang ◽  
Fumihiro Suzumura

2014 ◽  
Vol 602-603 ◽  
pp. 488-493 ◽  
Author(s):  
Bao Xin Zhu ◽  
Yu Jun Zhang ◽  
Hong Sheng Wang ◽  
Chong Hai Wang ◽  
Shuang Shuang Yue

SiC-TiB2/B4C composites were fabricated by hot-press sintering B4C with silicon powder and tetrabutyl titanate (precursor of TiO2) as sintering and reinforcement agents. The influence of additives on hot-press sintering densification, microstructure and properties of composites were studied. The results showed that TiB2 and SiC generated by chemical reaction between additives and B4C matrix reinforced the sintering activity of the mixed powders and accelerated significantly the hot-press sintering densification rate of B4C from 1200 °C to 1700 °C. According to the SEM observation, the second phase of TiB2 and SiC particles synthetized in situ sited along the grain boundaries of B4C, meanwhile, those SiC particles of nanoscale size embedded into the B4C grains, and thereby, intra/inter-type ceramics formed. The maximum relative density of 98.1% was obtained with 9wt.% TiO2. The typical valus of Vickers hardness, bending strength and fracture toughness can reach 26.7 GPa, 580 MPa and 5.0 MPam1/2, respectively.


2007 ◽  
Vol 539-543 ◽  
pp. 2687-2692
Author(s):  
Tarou Tokuda ◽  
Mitsuo Kido ◽  
Rong Guang Wang ◽  
Gonojo Katayama ◽  
Fumihiro Suzumura

Author(s):  
B Nikfar ◽  
H Ghiabakloo ◽  
H R M Hosseini ◽  
A V Mohammadi

2006 ◽  
Vol 317-318 ◽  
pp. 657-660 ◽  
Author(s):  
Minoru Takahashi ◽  
Koichiro Adachi ◽  
Ruben L. Menchavez ◽  
Masayoshi Fuji

In this study, we propose a new process to fabricate electrically conductive alumina by gelcasting and reduction sintering. The process used the conventional gelcasting method except for varying amounts of monomer at 2.8, 5.5, and 8.0 wt.% relative to the weight of the slurry. In the plastic mould, the slurry was under in situ solidification for 3 hrs at 25oC to achieve gelation. The freshly gelled bodies were demolded, carefully dried, and then sintered at 1100oC, 1300oC, and 1550oC in nitrogen atmosphere. The holding times at 1100oC and 1300oC was 2 hours, while at 1550oC were 2, 4, and 6 hrs. The sintered alumina body was characterized by electrical property, X-ray diffraction, and scanning electron microscopy. Results showed that monomer additions and sintering schedule significantly affect in lowering electrical resistance. The low value was 3.6×106 +cm at 8.0wt.% monomer addition and sintering at 1550oC for 2 hrs. The effect of physical properties on electrical conductivity and the corresponding reaction mechanism were discussed in details.


2007 ◽  
pp. 2687-2692
Author(s):  
Tarou Tokuda ◽  
Mitsuo Kido ◽  
Rong Guang Wang ◽  
Gonojo Katayama ◽  
Fumihiro Suzumura

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