Sintering and Dielectric Properties of Excess Bi2O3 Doped BaBi2Nb2O9 Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 188-191 ◽  
Author(s):  
Ho Hua Chung ◽  
Cheng Fu Yang ◽  
Yi Chang Chung ◽  
Cheng Yuan Kung
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Ferroelectric Materials ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
Dielectric Characteristics ◽  
X Ray ◽  
Curie Temperatures ◽  
Bi2o3 Content ◽  
Apparent Influence

In this study, ferroelectric materials with Bi-layered structure BaBi2Nb2O9 with excess x wt% Bi2O3 (x=0, 1.5, and 3) are investigated as the main compositions, and the sintering is proceeded from 1000oC~1100oC. The effect of Bi2O3 on the morphologies, crystal structure, and dielectric characteristics of BaBi2Nb2O9 ceramics is developed with the aid of SEM, X-ray diffraction, and dielectric-temperature curves. Dielectric properties are investigated in the temperature of 25oC~ 465oC at frequency 10KHz~1MHz. It is found that sintering temperature and Bi2O3 content has no apparent influence on the Curie temperatures, but they have large influence on the maximum dielectric constants.

Sintering Temperature Influence on Microwave Dielectric Properties of TiO2-ZrO2 Ceramics

2010 ◽  
Vol 660-661 ◽  
pp. 646-651
Author(s):  
José Vitor C. Souza ◽  
Pedro José Castro ◽  
Maria do Carmo de Andrade Nono ◽  
Sergio Luiz Mineiro
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Dielectric Constants ◽  
Dielectric Resonators ◽  
Temperature Influence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microwave Dielectric ◽  
Dielectric Ceramics

Dielectric ceramics have been widely investigated and used for microwave applications such as resonators and filters. The present study deals with the influence of sintering temperature on microwave dielectric properties of TiO2 ceramics with 10, 20, and 30 wt% ZrO2. Three compositions have been developed through mixing procedures and then tested for each sintering temperature: 1500 and 1400 °C. X-ray diffraction and scanning electron microscopy are carried out aiming to explain the ceramic behavior of each sample. The dielectric constants of different ceramics for both temperatures varied from 85.4 to 62.6, while their quality factor due to dielectric losses varied from 3110 to 1630. The Q decrease is attributed to the non uniform grain growth and to the obtained crystalline phases. The best microwave parameters were obtained for the ceramics sintered at 1400 °C, which can be applied in microwave circuits as dielectric resonators.

scholarly journals Sintering behaviour and microwave dielectric properties of MgO-2B2O3-xwt%BaCu(B2O5)-ywt%H3BO3 ceramics

2021 ◽  
Author(s):  
Haiquan Wang ◽  
Shixuan Li ◽  
Kangguo Wang ◽  
Xiuli Chen ◽  
Huanfu Zhou
Keyword(s):  
Dielectric Properties ◽  
Bulk Density ◽  
Single Phase ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
X Ray Diffraction ◽  
Microwave Dielectrics ◽  
X Ray ◽  
Microwave Dielectric ◽  
Sintering Behaviour

AbstractThis study investigates the bulk density, sintering behaviour, and microwave dielectric properties of the MgO-2B2O3 series ceramics synthesised by solid-state reaction. According to the X-ray diffraction and microstructural analyses, the as-prepared MgO-2B2O3 ceramics possess a single-phase structure with a rod-like morphology. The effects of different quantities of H3BO3 and BaCu(B2O5) (BCB) on the bulk density, sintering behaviour, and microwave dielectric properties of the MgO-2B2O3 ceramics were investigated. Accordingly, the optimal sintering temperature was obtained by adding 30 wt% H3BO3 and 8 wt% BCB. We also reduced the sintering temperature to 825 °C. Furthermore, the addition of 40 wt% H3BO3 and 4 wt% BCB increased the quality factor, permittivity, and temperature coefficient of resonance frequency of MgO-2B2O3 to 44,306 GHz (at 15 GHz), 5.1, and −32 ppm/°C, respectively. These properties make MgO-2B2O3 a viable low-temperature co-fired ceramic with broad applications in microwave dielectrics.

Effect of Sintering Temperatures and Ba/Ti Ratio on Dielectric Properties of BaTiO3 Ceramic

2013 ◽  
Vol 750-752 ◽  
pp. 506-511
Author(s):  
Yuan Yuan Li ◽  
Gui Xia Dong ◽  
Bi Yan Zhu ◽  
Qiu Xiang Liu ◽  
Di Wu
Keyword(s):  
Crystal Structure ◽  
Dielectric Properties ◽  
Curie Temperature ◽  
Sintering Temperature ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Method Effect

As a research object, the samples with various Ba/Ti ratios (Ba/Ti=0.95~1.05) were synthesized by solid phase reaction method. Effect of sintering temperatures and Ba/Ti ratio on dielectric properties and crystal structure of BaTiO3ceramic were investigated. Crystal structure and crystal phase composition were investigated by scanning electron microscopy and X-ray diffraction. The dielectric properties were studied by Agilent 4294A at 1 kHz. The results show that the BaTiO3ceramic has high permittivity and dielectric loss at 1340°C. The permittivity of BaTiO3ceramic with Ba/Ti=0.95 change small as the sintering temperatures vary at 1320°C. With the increasing of Ba/Ti ratio, the Curie temperature first increases and then decreases as the sample sintering at 1320°C. When Ba/Ti=1, the Curie temperature increase with the sintering temperature increasing.

Effect of Process on the Dielectric Properties of BaTiO3-Based X9R Ceramics

2014 ◽  
Vol 906 ◽  
pp. 18-24 ◽  
Author(s):  
Bao Lin Zhang ◽  
Bin Bin Zhang ◽  
Ning Ning Wang ◽  
Jing Ming Fei
Keyword(s):  
Particle Size ◽  
Dielectric Properties ◽  
Milling Time ◽  
Sintering Temperature ◽  
Sintering Process ◽  
X Ray Diffraction ◽  
Sintered Ceramic ◽  
X Ray ◽  
Particle Size Analyzer

The effect of milling time and sintering process on the dielectric properties of BaTiO3-based X9R ceramics was investigated. The characterization of the raw powders and the sintered ceramic was carried out by X-ray diffraction and scanning electron microscopy. The particle size distribution of the mixed powders was examined by Laser Particle Size Analyzer. The results shown that with the milling time extended, the Cruie Peak was depressed, or even disappeared. Moreover, with the rise of sintering temperature, the dielectric constant of the ceramics increased and the dielectric loss decreased gradually. Eventually, by milling for 11h and sintering at 1090°Cfor 2h, good dielectric properties were obtained, which were ε25°C≥ 2526, εr/εr25°C≤± 12% (–55~200°C), tanδ≤1.12% (25°C).

Sintering AlN Ceramics Below 1500°C with MgO-CaO-Al2O3-SiO2 Glass Addition

2007 ◽  
Vol 336-338 ◽  
pp. 1868-1871 ◽  
Author(s):  
Cheng Fu Yang ◽  
Chien Min Cheng ◽  
Ho Hua Chung ◽  
Chao Chin Chan
Keyword(s):  
Sintering Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Dielectric Characteristics ◽  
Sintering Aid ◽  
Glass Addition ◽  
X Ray ◽  
Crystal Phases ◽  
Diffraction Patterns ◽  
Scanning Electron

5~15 wt% MgO-CaO-Al2O3-SiO2 (MCAS, fabricated by sol-gel method) glass is used as the sintering aid of AlN ceramics. The sintering is proceeded from 1350oC~1550oC, scanning electron microscope is used to observe the sintered morphologies and X-ray diffraction pattern are used to confirm the crystal structures. From the SEM observations, as 10wt% and 15wt% MCAS is added, AlN ceramics can be densified at 1500oC and 1450oC, which are much lower than the before studies were. From the X-ray diffraction patterns, the crystal phases of MCAS-AlN ceramics are AlN, Al2O3, and cordierite phases. In this study, the dielectric characteristics of MCAS-AlN ceramics are also developed as a function of MCAS content and sintering temperature.

A new low-loss microwave dielectric ceramic for low temperature cofired ceramic applications

2010 ◽  
Vol 25 (7) ◽  
pp. 1235-1238 ◽  
Author(s):  
Huanfu Zhou ◽  
Xiuli Chen ◽  
Liang Fang ◽  
Dongjin Chu ◽  
Hong Wang
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric Ceramic ◽  
X Ray Diffraction ◽  
Low Loss ◽  
Dielectric Ceramic ◽  
X Ray ◽  
Microwave Dielectric

A new low sintering temperature microwave dielectric ceramic, Li2ZnTi3O8, was investigated. X-ray diffraction data show that Li2ZnTi3O8 has a cubic structure [P4332(212)] with lattice parameters a = 8.37506 Å, V = 587.44 Å3, and Z = 4 when the sintering temperature is 1050 °C. The Li2ZnTi3O8 ceramic exhibits good microwave dielectric properties with εr about 26.2, Q×f value about 62,000 GHz, and τf about −15 ppm/°C. The addition of BaCu(B2O5) can effectively lower the sintering temperature from 1050 to 900 °C without degrading the microwave dielectric properties. Compatibility with Ag electrode indicates this material can be applied to low temperature cofired ceramic devices.

The Characteristics of Ferroelectric Sr0.4Ba0.6Nb2-xVxO6 Dielectrics

2008 ◽  
Vol 368-372 ◽  
pp. 136-139
Author(s):  
Yao Sheng Yang ◽  
Wen Cheng Tzou ◽  
Guan Hung Wu ◽  
Cheng Fu Yang ◽  
Chern Hwa Chen ◽  
...  
Keyword(s):  
Ceramic Material ◽  
Sintering Temperature ◽  
Dielectric Constants ◽  
Temperature Dependent ◽  
Dielectric Characteristics ◽  
Sem Micrographs ◽  
V2o5 Content ◽  
Large Influence ◽  
Curie Temperatures

In this study, it would be interesting to investigate ceramic material based on Sr0.4Ba0.6Nb2O6 composition, V2O5 was used to substitute Nb2O5 to form the compositions of Sr0.4Ba0.6Nb2-xVxO6, where 0 ≤ x ≤ 0.3. The prepared Sr0.4Ba0.6Nb2-xVxO6 ceramics were sintered from 1060oC to 1300oC, and the needed sintering temperatures were dependent on V2O5 content. The SEM micrographs showed that even 1220oC was used as the sintering temperature of Sr0.4Ba0.6Nb2O6 ceramics, the pores were still observed. The crystal intensities of some (h,k,l) planes, for example (3,2,0) and (5,5,0) planes, apparently increased with the increase of V2O5 content and slightly decreased with the increase of sintering temperatures. The temperature-dependent dielectric characteristics were measured from 25oC to 300oC at 1MHz as a function of sintering temperatures and V2O5 content. The studied results would show that the sintering temperatures and V2O5 content also had large influence on the maximum dielectric constants (revealed at Curie temperatures) and the temperature-dielectric curves of Sr0.4Ba0.6Nb2-xVxO6 ceramics.

Influence of Sintering Temperature on Densification and Microstructure of Zn3Nb2O8 Ceramics Derived from Nanopowders

2011 ◽  
Vol 194-196 ◽  
pp. 656-659 ◽  
Author(s):  
Phakkhananan Pakawanit ◽  
Supon Ananta
Keyword(s):  
Dielectric Properties ◽  
Single Phase ◽  
Sintering Temperature ◽  
Density Measurement ◽  
Maximum Density ◽  
Dielectric Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dielectric Ceramics ◽  
Scanning Electron

Zinc niobate, Zn3Nb2O8, dielectric ceramics were fabricated by sintering Zn3Nb2O8 nanopowders derived from a rapid vibro-milling technique at various temperatures. Phase formation, densification, microstructure and dielectric properties of the ceramics were investigated as a function of sintering temperatures (1000-1200°C), using a combination of X-ray diffraction, Archimedes density measurement, scanning electron microscopy and dielectric measurement, respectively. It has been found that single-phase Zn3Nb2O8 ceramics with maximum density of ~98% theoretical density can be successfully produced with appropriate firing temperature, without any firing additives. Moreover, it is seen that the dielectric properties are found to enhance with increasing sintering temperature and grain size.

Effect of Sintering Temperature on Structure and Dielectric Properties of BZN Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 1203-1206
Author(s):  
Yun Hui Xu ◽  
Xiao Hong Zhu ◽  
Qiang Zhang ◽  
Jian Guo Zhu ◽  
Ding Quan Xiao
Keyword(s):  
Dielectric Properties ◽  
Loss Tangent ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Microwave Frequency ◽  
Fabrication Technology ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dielectric Constant And Loss ◽  
Different Temperatures

Bismuth zinc niobate [(Bi1.5Zn0.5)(Nb1.5Zn0.5)O7, abbreviated as BZN] ceramics are receiving increasing attention due to their excellent dielectric properties in the microwave frequency range. This work is aimed at improving the fabrication technology of BZN ceramics. BZN ceramic specimens were prepared using the general electronic ceramic technique including milling, calcining, crushing, pressing, and sintering. Different sintering temperatures in the range of 950-1080°C were used to study how sintering temperature affects the structure and dielectric properties of BZN ceramics. The crystallinity and microstructure of the BZN ceramics, which were measured respectively by X-ray diffraction and scanning electron microscopy, were improved with increasing of the sintering temperature. The frequency dependence of the dielectric constant and loss tangent was measured at room temperature from 1 kHz to 1 MHz. The dielectric properties of the specimen sintered at 1050°C were found to be the best, for which the relative permittivity (εr) and the loss tangent (tanδ) are around 146 and 0.005, respectively. It was also foεund that when the sintering temperature was higher than 1000°C, the εrand the tanδ of BZN ceramics sintered at different temperatures were similar. As a result, 1000°C may be an appropriate sintering temperature for BZN ceramics.

Researched on Dielectric Properties of Alumina Substrate Material

2012 ◽  
Vol 502 ◽  
pp. 87-90
Author(s):  
Chen Jie Guo ◽  
Chang Song Zhang
Keyword(s):  
Dielectric Properties ◽  
Phase Distribution ◽  
Sintering Temperature ◽  
Matrix Material ◽  
Fracture Morphology ◽  
Substrate Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Main Crystalline Phase ◽  
Ceramic Sintering

In this paper, Al2O3-Bi2O3was choosed as chip fuse matrix material. Composition of Al2O3-Bi2O3ceramics samples in different sintering temperature was studied by X-ray diffraction, and dielectric properties of samples under different frequency was measured. The results show that the mixture of Bi2O3in Al2O3ceramics can improve the sintering activity of Al2O3ceramics, and thus greatly reduced the ceramic sintering temperature. It is concluded that the main crystalline phase is pure α-Al2O3without miscellaneous phase distribution. The distribution of fracture morphology is uniform without the existence of apparent stomatal, the dielectric constant and dielectric loss was studied.

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