Characteristics of Synthesized Diamond Films by Using CACVD Techniques at High Temperatures

2009 ◽  
Vol 421-422 ◽  
pp. 131-134
Author(s):  
Y. Wongprasert ◽  
S.B. Pongsai
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperatures ◽  
High Resistance ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Hydrogen Termination

This paper presents synthesized diamond films by using combustion activated chemical vapor deposition (CACVD) techniques. The characteristics of diamond films have been studied at wide ranges of temperature (30-400°C). The resistance of diamond films has been determined for hydrogen termination times of 5, 10, 15, and 20 minutes, and at the operation temperatures of 500, 600, and 700°C. The investigation found that, at 30°C a synthesized diamond film has a high resistance (1010 ), whereas at high temperatures (100-400°C) the resistance has decreased from 4.04 M to 2.42 M. The result obtained from the hydrogen termination showed that the resistance has decreased by 105-106  (at 30°C). Summarily, it can be stated that the higher the hydrogen termination times and operation temperatures, the lower the resistance of diamond films.

Examination of the material properties and performance of thin-diamond film cutting tool inserts produced by arc-jet and hot filament chemical vapor deposition

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Cutting Tool ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
And Performance ◽  
Hot Filament

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.

DYNAMIC SCALING PHENOMENA IN DIAMOND FILM GROWTH

2001 ◽  
Vol 08 (03n04) ◽  
pp. 347-351 ◽  
Author(s):  
M. CATTANI ◽  
M. C. SALVADORI
Keyword(s):  
Chemical Vapor Deposition ◽  
Differential Equations ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Diamond Films ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Dynamic Scaling ◽  
Diamond Film Growth

In this paper we investigate how the growth dynamics of diamond films, synthesized by plasma-enhanced chemical vapor deposition, can be explained within the framework of the Edwards–Wilkinson and Kardar–Parisi–Zhang stochastic differential equations.

Effect of Methane Concentration on the Performance of Diamond Films Prepared by MPCVD

2014 ◽  
Vol 1053 ◽  
pp. 402-406 ◽  
Author(s):  
Xi Feng Ding ◽  
Xin Sun ◽  
Wen Jing Wang ◽  
Hong Mei Zhang ◽  
Hua Na Gao
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Monocrystalline Silicon ◽  
Microwave Plasmas ◽  
High Quality ◽  
Gas Source

Diamond films were deposited by using methane and hydrogen as the gas source and utilizing the approach of chemical vapor deposition of microwave plasmas on the monocrystalline silicon piece. An analysis was also conducted to investigate the influence of methane concentration on the diamond film. When the methane concentration was set at 0.5%, the experiment turned out to have the high quality diamond film which was dense with homogeneous sizes. In condition that the methane concentration was 2.44%, the film obtained was much denser but with larger proportion of non-diamond components. In case that the methane concentration was about 0.25%, the purity of diamond film was declined while the film was inconsistent.

Effect of Carbon Concentration on the Optical Properties of Nanocrystalline Diamond Films Deposited by Hot-Filament Chemical Vapor Deposition Method

2008 ◽  
Vol 8 (5) ◽  
pp. 2534-2539
Author(s):  
Linjun Wang ◽  
Jianmin Liu ◽  
Ling Ren ◽  
Qingfeng Su ◽  
Weimin Shi ◽  
...  
Keyword(s):  
Grain Size ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Carbon Concentration ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Grain ◽  
Hot Filament

With reducing diamond grain size to nano-grade, the increase of grain boundaries and non-diamond phase will result in the change of the optical properties of chemical vapor deposition (CVD) diamond films. In this paper, the structure, morphology and optical properties of nanocrystalline diamond (NCD) films, deposited by hot-filament chemical vapor deposition (HFCVD) method under different carbon concentration, are investigated by SEM, Raman scattering spectroscopy, as well as optical transmission spectra and spectroscopic ellipsometry. With increasing the carbon concentration during the film deposition, the diamond grain size is reduced and thus a smooth diamond film can be obtained. According to the data on the absorption coefficient in the wavelength range from 200 to 1100 nm, the optical gap of the NCD films decreases from 4.3 eV to 3.2 eV with increasing the carbon concentration from 2.0% to 3.0%. From the fitting results on the spectroscopic ellipsometric data with a four-layer model in the photon energy range of 0.75–1.5 eV, we can find the diamond film has a lower refractive index (n) and a higher extinction coefficient (k) when the carbon concentration increases.

Nitrogen and Bias Effect on Homoepitaxial Diamond Growth by Hot-Filament Chemical Vapor Deposition

2010 ◽  
Vol 443 ◽  
pp. 510-515 ◽  
Author(s):  
Hung Yin Tsai ◽  
Chih Cheng Chang ◽  
Chih Wei Wu
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Hot Filament

The development of homoepitaxial films for advanced device applications has been studied, but high growth rate and diamond film quality have not yet been explored. In the current study, high quality homoepitaxial diamond films were grown on type Ib (100) HPHT synthetic diamond substrate by hot-filament chemical vapor deposition. The reactant gases were mixed by CH4 and H2 with small amounts of N2 (500 to 3000 ppm). Besides, a bias system was used to assist diamond film deposition. The pyramidal crystals on diamond surface can be suppressed and high quality diamond film of FWHM (Full Width at Half Maximum) = 10.76 cm-1 with high growth rate of 8.78 ± 0.2 μm/ hr was obtained at the condition of adding 1000 ppm nitrogen. At the bias voltage of -150 V, the pyramidal crystals can also be suppressed and high quality diamond film of FWHM = 10.19 cm-1 was obtained. With nitrogen addition above 2000 ppm, diamond film was partly doped and some sp2 structures appeared. These homoepitaxial diamond films were characterized by optical microscopy and micro-Raman spectroscopy.

LATERAL OVERGROWTH OF DIAMOND FILMS ON METAL MASKED SUBSTRATE BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 841-844 ◽  
Author(s):  
H. YAMAMOTO ◽  
Y. NAOI ◽  
Y. FUJII ◽  
Y. SHINTANI
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Crystal Nucleation ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Mask Material

We have grown laterally overgrown diamond films on stripe patterned silicon substrates by microwave plasma chemical vapor deposition. Titanium was used as the mask material and stripe patterns were fabricated using conventional photolithographic method. The selective growth area and the metal mask part order to enhance the crystal nucleation was performed before photolithographic process. SEM observation revealed that the diamond film was laterally overgrown on titanium mask. The result width of diamond film was 16 μm. The grain size on mask region was about three times as large as that g rown on nucleation region.

Uniform Deposition of Chemical Vapor Deposition Diamond Films on Slender Tungsten Wires

2016 ◽  
Vol 848 ◽  
pp. 618-623
Author(s):  
Xin Chang Wang ◽  
Xiao Tian Shen ◽  
Tian Qi Zhao ◽  
Fang Hong Sun ◽  
Bin Shen
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
High Surface ◽  
Diamond Films ◽  
Surface Hardness ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
Substrate Adhesion ◽  
Film Substrate

In the present study, high-quality chemical vapor deposition (CVD) micro-crystalline diamond (MCD) film was successfully deposited on the surface of the Φ0.5 mm×120 mm tungsten wire using a special designed graphitic jig for supporting the substrate and a two-step deposition procedure for guaranteeing the uniformity of as-deposited diamond film. It is proved that as-deposited film indeed presented much more uniform thickness than that obtained using a conventional jig described in the previous literature, and a very thick WC interlayer spontaneously formed between the substrate and the diamond film, which together with as-deposited MCD film have significant effects on mechanical properties of the wire. Generally speaking, the coated wire remains extremely high surface hardness of the MCD film and considerable toughness of the substrate, along with favorable film-substrate adhesion. It is recognized that these the coated tungsten wires have broad application prospects, but the technologies for depositing diamond films that are thick enough on even longer and thinner wires still need further investigation.

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