Prototype of Illumination-Collection Mode Scanning Near-Field Optical Microscopy and Raman Spectroscopy with Gold Inner-Coated Aperture-Less Pyramidal Probe

2010 ◽  
Vol 459 ◽  
pp. 129-133
Author(s):  
Sumio Hosaka ◽  
Hirokazu Koyabu ◽  
Yusuke Aramomi ◽  
Hayato Sone ◽  
You Yin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
High Resolution ◽  
Stress Distribution ◽  
Optical Microscopy ◽  
Near Field ◽  
Peak Shift ◽  
Raman Peak ◽  
Optical Images ◽  
Raman Peak Shift

We have prototyped illumination-collection mode scanning near-field optical microscopy (SNOM) and near-field Raman spectroscopy (NFRS) with gold inner-covered aperture-less pyramidal probe in order to study the possibility to detect optical images, and Raman spectrum and Raman peak shift for stress distribution in Si device with high resolution of about 10 nm.

scholarly journals Synthesis of cubic CdSe nanocrystals and their spectral properties

2017 ◽  
Vol 7 ◽  
pp. 184798041770174 ◽  
Author(s):  
Yukun Gao ◽  
PG Yin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cadmium Selenide ◽  
Surface Effect ◽  
Peak Shift ◽  
Raman Peak ◽  
Cdse Nanocrystals ◽  
Transmission Electron ◽  
Raman Peak Shift

The cadmium selenide nanocrystals are prepared by colloidal chemistry under mild conditions. X-ray diffraction and high-resolution transmission electron microscopy measurements indicate that as-prepared cadmium selenide nanocrystals are zinc blende cubic structure. We carry out an analysis of quantum size effect in the Raman spectra of cadmium selenide nanocrystals performed by utilizing the chemical bond theory of Raman peak shift developed recently. It is revealed that the shifts of Raman peaks in cadmium selenide nanocrystals result from the overlapping of the quantum effect shifts and surface effect shifts. The sizes of the as-prepared cadmium selenide nanocrystals obtained by employing the Raman peak shift theory are in good agreement with the nanocrystal sizes determined by high-resolution transmission electron microscopy.

scholarly journals Near-Field Scanning Optical Microscopy for High-Resolution Membrane Studies

Nanoimaging ◽  
2012 ◽  
pp. 373-394 ◽  
Author(s):  
Heath A. Huckabay ◽  
Kevin P. Armendariz ◽  
William H. Newhart ◽  
Sarah M. Wildgen ◽  
Robert C. Dunn
Keyword(s):  
High Resolution ◽  
Optical Microscopy ◽  
Near Field ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.

Reorientation of carbon nanotubes in polymer matrix composites using compressive loading

2005 ◽  
Vol 20 (4) ◽  
pp. 1026-1032 ◽  
Author(s):  
Michael J. Lance ◽  
Chun-Hway Hsueh ◽  
Ilia N. Ivanov ◽  
David B. Geohegan
Keyword(s):  
Strain Energy ◽  
Polymer Matrix Composites ◽  
Compressive Loading ◽  
Local Strain ◽  
Peak Shift ◽  
Raman Peak ◽  
Matrix Composites ◽  
Raman Peak Shift ◽  
Polarized Raman

Purified single-walled nanotubes (SWNTs) were dispersed in an epoxy polymer and subjected to uniaxial compressive loading. The orientation and stress in the nanotubes were monitored in situ using polarized Raman microscopy. At strains less than 2%, the nanotubes reorient normal to the direction of compression, thereby minimizing the local strain energy. Above 2% strain, the Raman peak shift reaches a plateau. A new analytical model, which approximates the SWNT reorientation by varying the aspect ratio of a representative spheroid, predicted the rotation behavior of nanotubes under load. The results of this model suggest that the observed plateau of the Raman peak shift is caused by both polymer yielding and interfacial debonding at the ends of nanotubes.

Light depolarization induced by metallic tips in apertureless near-field optical microscopy and tip-enhanced Raman spectroscopy

2008 ◽  
Vol 19 (21) ◽  
pp. 215702 ◽  
Author(s):  
P G Gucciardi ◽  
M Lopes ◽  
R Déturche ◽  
C Julien ◽  
D Barchiesi ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Optical Microscopy ◽  
Near Field ◽  
Tip Enhanced Raman Spectroscopy ◽  
Light Depolarization

scholarly journals Influence of applied current density on the nanostructural and light emitting properties of n-type porous silicon

2015 ◽  
Vol 29 (15) ◽  
pp. 1550093 ◽  
Author(s):  
A. Cetinel ◽  
N. Artunç ◽  
G. Sahin ◽  
E. Tarhan
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Pore Diameter ◽  
Crystalline Silicon ◽  
Peak Shift ◽  
Raman Peak ◽  
Light Emitting ◽  
Nanocrystallite Size ◽  
Raman Peak Shift ◽  
Pore Depth

Effects of current density on nanostructure and light emitting properties of porous silicon (PS) samples were investigated by field emission scanning electron microscope (FE-SEM), gravimetric method, Raman and photoluminescence (PL) spectroscopy. FE-SEM images have shown that below 60 mA/cm 2, macropore and mesopore arrays, exhibiting rough morphology, are formed together, whose pore diameter, pore depth and porosity are about 265–760 nm, 58–63 μ m and 44–61%, respectively. However, PS samples prepared above 60 mA/cm 2 display smooth and straight macropore arrays, with pore diameter ranging from 900–1250 nm, porosity of 61–80% and pore depth between 63–69 μ m . Raman analyses have shown that when the current density is increased from 10 mA/cm 2 to 100 mA/cm 2, Raman peaks of PS samples shift to lower wavenumbers by comparison to crystalline silicon (c-Si). The highest Raman peak shift is found to be 3.2 cm -1 for PS sample, prepared at 90 mA/cm 2, which has the smallest nanocrystallite size, about 5.2 nm. This sample also shows a pronounced PL, with the highest blue shifting, of about 12 nm. Nanocrystalline silicon, with the smallest nanocrystallite size, confirmed by our Raman analyses using microcrystal model (MCM), should be responsible for both the highest Raman peak shift and PL blue shift due to quantum confinement effect (QCE).

HIGH RESOLUTION RAMAN SPECTROSCOPY OF GASES: III. RAMAN SPECTRUM OF NITROGEN

1954 ◽  
Vol 32 (10) ◽  
pp. 630-634 ◽  
Author(s):  
B. P. Stoicheff
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
High Resolution ◽  
Electronic Spectra ◽  
Second Order ◽  
Published Data ◽  
Rotational Spectrum ◽  
Rotational Constants ◽  
Vibrational Constants

The pure rotational spectrum and the Q branch of the 1–0 band of N2 were photographed in the second order of a 21 ft. grating. An analysis of the rotational spectrum yields the rotational constants[Formula: see text]The value of B0 together with the Bν values obtained from the electronic bands of N2 gives[Formula: see text]Revised values of the vibrational constants have also been calculated using the results of the present work and the published data on the electronic spectra.

Near-field scattering optical microscopy probes for high-resolution beam scans of near-infrared lasers and waveguides

1998 ◽  
Author(s):  
Roderick S. Taylor ◽  
Kurt E. Leopold ◽  
Jeffrey W. Fraser ◽  
Yan Feng ◽  
Margaret Buchanan
Keyword(s):  
High Resolution ◽  
Optical Microscopy ◽  
Near Infrared ◽  
Near Field ◽  
Infrared Lasers
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