The Analysis of Output Power of a Laser Diode Based on the Difference Method

2011 ◽  
Vol 474-476 ◽  
pp. 1678-1683 ◽  
Author(s):  
Bu Yin Garidi ◽  
Jiu Ru Yang ◽  
Hong An Ye
Keyword(s):  
Output Power ◽  
Analytical Model ◽  
Laser Diode ◽  
Difference Method ◽  
Internal Quantum Efficiency ◽  
Threshold Current ◽  
Rate Equations ◽  
Average Error ◽  
Mean Deviation ◽  
Power Characteristics

It is an expedient and efficient method to simulate the output power characteristics of a laser diode through the numerical analysis. In this paper, firstly, based on the rate equations of the electrons transition in the active layer, the functions of some key parameters, such as internal quantum efficiency, threshold current and leakage current, etc., are defined with the variance of working temperature. And an accurate numerical analytical model is built by adopting the low-complexity difference method. Then, the simulated results are compared with the results from testing and Optiwave3.0 software. The results show that, by using the proposed analytical model, the simulation on the output power characteristics of a laser diode can be realized in all input current fields, which overcomes the drawbacks within the Optiwave3.0 software. At the same time, the mean deviation between the simulated results and testing results is reduced obviously, and the average error is only 3.88%.

Output Power Characteristics of the Laser-diode-pumped Quasi-three-level 914 nm-Nd:YVO$_{4}$ Laser

2015 ◽  
Vol 65 (2) ◽  
pp. 188-193
Author(s):  
Han Tae CHOO* ◽  
Gyu Ug KIM ◽  
Cha Gon PARK ◽  
Kun Hee RHYEE
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Power Characteristics ◽  
Diode Pumped

Output Power Characteristics of the Laser Diode-end-pumped cw Nd:GdVO$_4$ Laser Operating at 1.34

2012 ◽  
Vol 62 (2) ◽  
pp. 148-154
Author(s):  
Han-Tae CHOO* ◽  
Cha-Gon PARK ◽  
Gyu-Ug KIM ◽  
Sung-Wug BYEN
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Power Characteristics

scholarly journals Semipolar {202̅1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1563
Author(s):  
Srinivas Gandrothula ◽  
Haojun Zhang ◽  
Pavel Shapturenka ◽  
Ryan Anderson ◽  
Matthew S. Wong ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Output Power ◽  
Laser Diode ◽  
Laser Diodes ◽  
Light Output ◽  
Laser Action ◽  
Feasibility Studies ◽  
Threshold Current ◽  
Optical Measurements ◽  
Light Output Power

Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) “handmade” facets, wherein lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed the laser action in the RIE facet LDs with a threshold current of ~19 kAcm−2 and maximum light output power of 20 mW from a single uncoated facet. Handmade facet devices showed spontaneous, LED-like emission, confirming device layers remain intact after mechanical liftoff.

scholarly journals Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 875
Author(s):  
Wenjie Wang ◽  
Wuze Xie ◽  
Zejia Deng ◽  
Mingle Liao
Keyword(s):  
Quantum Wells ◽  
Output Power ◽  
Laser Diode ◽  
Barrier Layer ◽  
Threshold Current ◽  
Reference Structure ◽  
Multiple Quantum ◽  
Symmetric Quantum ◽  
Low Threshold ◽  
P Type

Herein, the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm are theoretically investigated by adjusting the relative thickness of the first or last barrier layer in the three In0.15Ga0.85N/In0.02Ga0.98N quantum wells, which is achieved with the simulation program Crosslight. It was found that the thickness of the first or last InGaN barrier has strong effects on the threshold currents and output powers of the laser diodes. The optimal thickness of the first quantum barrier layer (FQB) and last quantum barrier layer (LQB) were found to be 225 nm and 300 nm, respectively. The thickness of LQB layer predominantly affects the output power compared to that of the FQB layer, and the highest output power achieved 3.87 times that of the reference structure (symmetric quantum well), which is attributed to reduced optical absorption loss as well as the reduced vertical electron leakage current leaking from the quantum wells to the p-type region. Our result proves that an appropriate LQB layer thickness is advantageous for achieving low threshold current and high output power lasers.

The study of temperature effect on the performance characteristics of the InGaN-based vertical cavity surface emitting laser (VCSEL) by solving the rate equations

2016 ◽  
Vol 30 (22) ◽  
pp. 1650150
Author(s):  
A. Zandi Goharrizi ◽  
Gh. Alahyarizadeh
Keyword(s):  
Output Power ◽  
Threshold Current ◽  
Injection Current ◽  
Effect Of Temperature ◽  
Rate Equations ◽  
Cavity Surface ◽  
Long Distance ◽  
Vertical Cavity Surface ◽  
Time Variations ◽  
Vertical Cavity

The use of semiconductor lasers is beneficial in long-distance communications. Practical communication systems based on these lasers need high ambient temperature, with temperature changes between [Formula: see text]C and [Formula: see text]C. The study of the temperature-dependent response of these lasers is important to improve them. This study investigates the effect of temperature on InGaN-based vertical cavity surface emitting lasers (VCSEL). The active region in this structure includes a single quantum well (SQW). The rate equations of carriers and densities are numerically solved. The time variations of carrier density, photon density and output power ([Formula: see text], [Formula: see text] and [Formula: see text]) at [Formula: see text]C and the current injection of 0.04 A are obtained. Values obtained for threshold current and output power include 7 mA and 44 mW, respectively. The effect of temperature on the time variations of [Formula: see text], [Formula: see text] and [Formula: see text] from [Formula: see text]C to [Formula: see text]C is studied. Results show that these parameters decrease and the threshold current increases with an increase in temperature. Furthermore, the investigation of the effect of injection current on [Formula: see text], [Formula: see text] and [Formula: see text] shows that raising the injection current can increase these parameters. Moreover, an increase in the injection current reduces the time response.

scholarly journals Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1335
Author(s):  
Chibuzo Onwukaeme ◽  
Han-Youl Ryu
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Doping Concentration ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Blue Laser ◽  
Electron Blocking Layer ◽  
Mg Doping ◽  
Cladding Layer ◽  
P Type

In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result of increased optical absorption, implying that optimization of the Mg doping concentration is required. In this study, we systematically investigated the effect of the Mg doping concentration in the AlGaN electron-blocking layer (EBL) and the AlGaN p-cladding layer on the output power, forward voltage, and wall-plug efficiency (WPE) of InGaN blue LD structures using numerical simulations. In the optimization of the EBL, an Al composition of 20% and an Mg doping concentration of 3 × 1019 cm−3 exhibited the best performance, with negligible electron leakage and a high WPE. The optimum Mg concentration of the p-AlGaN cladding layer was found to be ~1.5 × 1019 cm−3, where the maximum WPE of 38.6% was obtained for a blue LD with a threshold current density of 1 kA/cm2 and a slope efficiency of 2.1 W/A.

X-band Silicon Carbide IMPATT Oscillator

2001 ◽  
Vol 680 ◽  
Author(s):  
Konstantin V. Vassilevski ◽  
Alexandr V. Zorenko ◽  
Konstantinos Zekentes
Keyword(s):  
Silicon Carbide ◽  
Pulse Duration ◽  
Output Power ◽  
Pulse Current ◽  
Input Pulse ◽  
Threshold Current ◽  
Avalanche Breakdown ◽  
X Band

ABSTRACTPulsed X-band (8.2 - 12.4 GHz) IMPATT oscillators have been fabricated and characterized. They utilized 4H-SiC diodes with single drift p+-n-n+ structures and avalanche breakdown voltages of about 290 V. The microwave oscillations appeared at a threshold current of 0.3 A. The maximum measured output power was about 300 mW at input pulse current of 0.35 A and pulse duration of 40 ns.

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