Preparation of c-Axis-Oriented Y2Ba4Cu7O15-δ Films by Laser CVD with Ultrasonically Nebulized Precursor

2012 ◽  
Vol 508 ◽  
pp. 207-210
Author(s):  
Akihiko Ito ◽  
Mitsutaka Sato ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Single Phase ◽  
Chemical Vapor ◽  
Precursor Concentration ◽  
Laser Chemical Vapor Deposition ◽  
Axis Orientation ◽  
Liquid Precursor ◽  
Laser Cvd

C-Axis-Oriented Y2Ba4Cu7O15-δ (Y247) Films Were Prepared on Multilayer-Coated Hasterolly Tape Substrate by Laser Chemical Vapor Deposition with Ultrasonically Nebulized Liquid Precursor. At a Low Precursor Concentration of 0.01 mol l−1 and Deposition Temperature of 933 K, Single-Phase Y247 Film with Significant c-Axis Orientation Was Obtained. At a Precursor Concentration of 0.1 mol l−1 and Deposition Temperature 983 K, a-Axis-Oriented YBa2Cu3O7-δ (Y123) Was Codeposited with C-Axis Oriented Y247 Film.

Preparation of Titania Solid Films by Laser CVD Using CO2 Laser

2012 ◽  
Vol 508 ◽  
pp. 279-282 ◽  
Author(s):  
Ming Gao ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Laser Chemical Vapor Deposition ◽  
Solid Films ◽  
Solid Film ◽  
Laser Cvd

Titania (TiO2) Films Having Dense and Solid Microstructure Were Prepared by Laser Chemical Vapor Deposition Using CO2 Laser. The Effects of Deposition Temperature (Tdep) and Total Chamber Pressure (Ptot) on Phase and Microstructure of TiO2 Films Were Investigated. At Ptot = 600 Pa and Tdep = 790 K, Rutile TiO2 Film Had a Polygonal Platelet Grains 2 μm in Size. At Ptot = 600 Pa and Tdep = 1010 K, Rutile TiO2 Film Had (110) Orientation and Consisted of a Truncated Polyhedron 5–6 μm in Size. At Ptot = 200 Pa and Tdep = 955 K, Rutile TiO2 Film Has a Solid Columnar Having Faceted Surface. A Dense and Solid TiO2 Film Was Obtained at Ptot = 200 Pa and Tdep = 1120 K. The Deposition Rate of TiO2 Solid Film Was Reached 240 μm h−1.

scholarly journals Structural study of epitaxial NdBa2Cu3O7−x films by laser chemical vapor deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (35) ◽  
pp. 19811-19817
Author(s):  
Rong Tu ◽  
Kaidong Wang ◽  
Ting Wang ◽  
Meijun Yang ◽  
Qizhong Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Study ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Preferred Orientation ◽  
Laser Chemical Vapor Deposition ◽  
Laser Cvd

Investigate the effect of deposition temperature on preferred orientation, crystallinity, microstructure of NdBCO films using laser CVD.

Ba2TiO4 and Ba4Ti13O30 Thick Films Prepared by Laser Chemical Vapor Deposition and their Microstructure

2012 ◽  
Vol 508 ◽  
pp. 199-202
Author(s):  
Dong Yun Guo ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Thick Films ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Columnar Growth ◽  
Deposition Rates

Ba2TiO4 and Ba4Ti13O30 Thick Films Were Prepared by Laser Chemical Vapor Deposition Using Ba- and Ti-Dipivaloylmethanate Precursors. Single-Phase Ba2TiO4 Thick Films Were Obtained at 845–946 K and Ba/Ti Source Molar Ratio 2.4. Single-Phase Ba4Ti13O30 Films Were Obtained at 944–1011 K and Ba/Ti Source Molar Ratio 0.38. Ba2TiO4 Thick Films Consisted of Truncated Grains, while Ba4ti13o30 Thick Films Had Shellfish-Like Grains. Ba2TiO4 and Ba4Ti13O30 Thick Films Showed a Columnar Growth and their Deposition Rates Were 72 and 132 μm h−1, Respectively.

Preparation of Stoichiometric TiNx Films by Laser CVD with Metalorganic Precursor

2011 ◽  
Vol 239-242 ◽  
pp. 318-321
Author(s):  
Yan Sheng Gong ◽  
Wei Zhou ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Section ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Laser Power ◽  
Single Phase ◽  
Heating Temperature ◽  
Chemical Vapor ◽  
Laser Cvd ◽  
Source Materials

Nearly stoichiometric TiNxfilms were deposited on Al2O3substrates by laser enhanced chemical vapor deposition (CVD) with tetrakis (diethylamido) titanium (TDEAT) and ammonia as the source materials. Emphases were given on the effects of laser power (PL) and pre-heating temperature (Tpre) on the composition and deposition rate of TiNxfilms. Single phase of TiNxfilms with columnar cross section were obtained. The ratio of N to Ti in TiNxfilms increased with increasingPLand was close to stoichiometric atPL> 150 W. The deposition rate of TiNxfilms with a depositing area of 300 mm2was about 18-90 µm/h, which decreased with increasingPLandTpre.

Highly (004)-Oriented Texture of γ-LiAlO2 Films by Laser Chemical Vapor Deposition

2014 ◽  
Vol 616 ◽  
pp. 141-144
Author(s):  
Chen Chi ◽  
Hirokazu Katsui ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Total Pressure ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Oriented Texture

(004)-oriented γ-LiAlO2films were prepared on poly-crystalline AlN substrates by laser chemical vapor deposition at deposition temperature (Tdep) of 1100–1250 K, molar ratio of Li/Al (RLi/Al) of 1.0–10 and low total pressure (Ptot) of 100–200 Pa. The (004)-oriented γ-LiAlO2films consisted of pyramidal grains with a columnar structure. The deposition rate of (004)-oriented γ-LiAlO2films reached to 65–72 μm h-1.

Effect of NH3 Atmosphere on Preparation of Al2O3-AlN Composite Film by Laser CVD

2011 ◽  
Vol 484 ◽  
pp. 172-176
Author(s):  
Yu You ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Phase Composition ◽  
Chemical Vapor Deposition ◽  
Composite Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crystal Phase ◽  
Laser Chemical Vapor Deposition ◽  
Α Al2o3 ◽  
Laser Cvd ◽  
Source Materials

Al2O3-AlN composite film was first prepared by laser chemical vapor deposition (laser CVD) using aluminum acetylacetonate (Al(acac)3) and ammonia (NH3) as source materials. The effects of NH3 on the crystal phase, composition and microstructure were investigated. The crystal phase changed from α-Al2O3 to AlN gradually with increasing the mole ratio of NH3 to Ar. Al2O3-AlN composite film was obtained at NH3/Ar ratio ranged from 0.09 to 0.16 (Tdep = 862–887 K), and AlN granular grains were embedded in between α-Al2O3 polyhedral grains.

Microstructure of LiAl5O8 and LiAlO2 Films Prepared by Laser CVD

2014 ◽  
Vol 616 ◽  
pp. 223-226
Author(s):  
Chen Chi ◽  
Hirokazu Katsui ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Vapor Deposition ◽  
Total Pressure ◽  
Single Phase ◽  
Composite Films ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Deposition Rates ◽  
Typical Morphology ◽  
Laser Cvd

α-LiAl5O8, γ-LiAlO2, α-Al2O3and those composite films were prepared on AlN polycrystalline substrates by laser chemical vapor deposition (LCVD), and the effects of total pressure (Ptot) and the molar ratio of Li to Al (RLi/Al) on the morphology and deposition rates were investigated. The typical morphology of single-phase γ-LiAlO2films prepared atRLi/Al> 1.0 andPtot> 400 Pa was granular, whereas γ-LiAlO2films prepared atPtot< 200 Pa and γ-LiAlO2-α-LiAl5O8composite films had pyramidal grains. Single-phase α-LiAl5O8films showed polygonally faceted morphologies. Composite films of α-LiAl5O8and α-Al2O3consisted of carifllower-like and faceted grains. A single-phase γ-LiAlO2film deposited at 200 Pa showed the maximum deposition rate of 48 μm h-1.

A Novel Ruthenium Precursor for MOCVD without Seed Ruthenium Layer

2002 ◽  
Vol 748 ◽  
Author(s):  
Tetsuo Shibutami ◽  
Kazuhisa Kawano ◽  
Noriaki Oshima ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo
Keyword(s):  
Vapor Deposition ◽  
Deposition Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Decomposition Temperature ◽  
Liquid Precursor ◽  
Si Substrates ◽  
Initial Nucleation

ABSTRACTRuthenium thin films were deposited on SiO2/Si substrates at 275 – 400 °C by metalorganic chemical vapor deposition (MOCVD) using liquid precursor (2.4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp) DMPD: 2.4-dimethylpentadienyl EtCp: etylcyclopentadienyl]. Deposition characteristics of the films were compared with those using bis(ethylcyclopentadienyl)ruthenium.The decomposition temperature of Ru(DMPD)(EtCp) was 80 °C lower than Ru(EtCp)2. Both films consisted of Ru single phase for all deposition temperature range and showed an resistivity bellow 20 μΩcm for the films deposited above 300 °C. The initial nucleation of Ru films from Ru(DMPD)(EtCp) precursor was smaller in size and denser than that from Ru(EtCp)2. The deposition process from Ru(DMPD)(EtCp) has much shorter incubation time than that from Ru(EtCp)2.

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