Preparation of Titania Solid Films by Laser CVD Using CO2 Laser

2012 ◽  
Vol 508 ◽  
pp. 279-282 ◽  
Author(s):  
Ming Gao ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Laser Chemical Vapor Deposition ◽  
Solid Films ◽  
Solid Film ◽  
Laser Cvd

Titania (TiO2) Films Having Dense and Solid Microstructure Were Prepared by Laser Chemical Vapor Deposition Using CO2 Laser. The Effects of Deposition Temperature (Tdep) and Total Chamber Pressure (Ptot) on Phase and Microstructure of TiO2 Films Were Investigated. At Ptot = 600 Pa and Tdep = 790 K, Rutile TiO2 Film Had a Polygonal Platelet Grains 2 μm in Size. At Ptot = 600 Pa and Tdep = 1010 K, Rutile TiO2 Film Had (110) Orientation and Consisted of a Truncated Polyhedron 5–6 μm in Size. At Ptot = 200 Pa and Tdep = 955 K, Rutile TiO2 Film Has a Solid Columnar Having Faceted Surface. A Dense and Solid TiO2 Film Was Obtained at Ptot = 200 Pa and Tdep = 1120 K. The Deposition Rate of TiO2 Solid Film Was Reached 240 μm h−1.

Preparation of c-Axis-Oriented Y2Ba4Cu7O15-δ Films by Laser CVD with Ultrasonically Nebulized Precursor

2012 ◽  
Vol 508 ◽  
pp. 207-210
Author(s):  
Akihiko Ito ◽  
Mitsutaka Sato ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Single Phase ◽  
Chemical Vapor ◽  
Precursor Concentration ◽  
Laser Chemical Vapor Deposition ◽  
Axis Orientation ◽  
Liquid Precursor ◽  
Laser Cvd

C-Axis-Oriented Y2Ba4Cu7O15-δ (Y247) Films Were Prepared on Multilayer-Coated Hasterolly Tape Substrate by Laser Chemical Vapor Deposition with Ultrasonically Nebulized Liquid Precursor. At a Low Precursor Concentration of 0.01 mol l−1 and Deposition Temperature of 933 K, Single-Phase Y247 Film with Significant c-Axis Orientation Was Obtained. At a Precursor Concentration of 0.1 mol l−1 and Deposition Temperature 983 K, a-Axis-Oriented YBa2Cu3O7-δ (Y123) Was Codeposited with C-Axis Oriented Y247 Film.

Highly (004)-Oriented Texture of γ-LiAlO2 Films by Laser Chemical Vapor Deposition

2014 ◽  
Vol 616 ◽  
pp. 141-144
Author(s):  
Chen Chi ◽  
Hirokazu Katsui ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Total Pressure ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Oriented Texture

(004)-oriented γ-LiAlO2films were prepared on poly-crystalline AlN substrates by laser chemical vapor deposition at deposition temperature (Tdep) of 1100–1250 K, molar ratio of Li/Al (RLi/Al) of 1.0–10 and low total pressure (Ptot) of 100–200 Pa. The (004)-oriented γ-LiAlO2films consisted of pyramidal grains with a columnar structure. The deposition rate of (004)-oriented γ-LiAlO2films reached to 65–72 μm h-1.

scholarly journals Structural study of epitaxial NdBa2Cu3O7−x films by laser chemical vapor deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (35) ◽  
pp. 19811-19817
Author(s):  
Rong Tu ◽  
Kaidong Wang ◽  
Ting Wang ◽  
Meijun Yang ◽  
Qizhong Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Study ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Preferred Orientation ◽  
Laser Chemical Vapor Deposition ◽  
Laser Cvd

Investigate the effect of deposition temperature on preferred orientation, crystallinity, microstructure of NdBCO films using laser CVD.

Preparation of Stoichiometric TiNx Films by Laser CVD with Metalorganic Precursor

2011 ◽  
Vol 239-242 ◽  
pp. 318-321
Author(s):  
Yan Sheng Gong ◽  
Wei Zhou ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Section ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Laser Power ◽  
Single Phase ◽  
Heating Temperature ◽  
Chemical Vapor ◽  
Laser Cvd ◽  
Source Materials

Nearly stoichiometric TiNxfilms were deposited on Al2O3substrates by laser enhanced chemical vapor deposition (CVD) with tetrakis (diethylamido) titanium (TDEAT) and ammonia as the source materials. Emphases were given on the effects of laser power (PL) and pre-heating temperature (Tpre) on the composition and deposition rate of TiNxfilms. Single phase of TiNxfilms with columnar cross section were obtained. The ratio of N to Ti in TiNxfilms increased with increasingPLand was close to stoichiometric atPL> 150 W. The deposition rate of TiNxfilms with a depositing area of 300 mm2was about 18-90 µm/h, which decreased with increasingPLandTpre.

Growth of b-Axis-Oriented BaTi2O5 Nanopillars by Laser Chemical Vapor Deposition

2012 ◽  
Vol 508 ◽  
pp. 185-188 ◽  
Author(s):  
Dong Yun Guo ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Crystal Substrate ◽  
Laser Chemical Vapor Deposition ◽  
Crystal Substrate ◽  
Nanopillar Arrays

B-Axis-Oriented Bati2o5 Nanopillars Were Prepared on (100) Mgo Single Crystal Substrate by Laser Chemical Vapor Deposition Using Ba and Ti Dipivaloylmethanate Precursors. B-Axis-Oriented Bati2o5 Nanopillars Were Approximately 250–400 Nm in Width and 2.5 μm in Height. Deposition Rate of Bati2o5 Nanopillar Arrays Was about 75 μm H−1.

Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 311-314 ◽  
Author(s):  
Xiao An Fu ◽  
Jacob Trevino ◽  
Mehran Mehregany ◽  
Christian A. Zorman
Keyword(s):  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Atom Concentration ◽  
Pressure Chemical ◽  
Sic Films

This paper reports the effect of deposition temperature on the deposition rate, residual stress, and resistivity of in-situ nitrogen-doped (N-doped) polycrystalline 3C-SiC (poly-SiC) films deposited by low pressure chemical vapor deposition (LPCVD). N-doped poly-SiC films were deposited in a high-throughput, resistively-heated, horizontal LPCVD furnace capable of holding up to 150 mm-diameter substrates using SiH2Cl2 (100%) and C2H2 (5% in H2) precursors, with NH3 (5% in H2) as the doping gas. The deposition rate increased, while the residual stress decreased significantly as the deposition temperature increased from 825oC to 900°C. The resistivity of the films decreased significantly from 825°C to 850°C. Above 850°C, although the resistivity still decreased, the change was much smaller than at lower temperatures. XRD patterns indicated a polycrystalline (111) 3C-SiC texture for all films deposited in the temperature range studied. SIMS depth profiles indicated a constant nitrogen atom concentration of 2.6×1020/cm3 in the intentionally doped films deposited at 900°C. The nitrogen concentration of unintentionally doped films (i.e., when NH3 gas flow was zero) deposited at 900°C was on the order of 1017/cm3. The doped films deposited at 900°C exhibited a resistivity of 0.02 -cm and a tensile residual stress of 59 MPa, making them very suitable for use as a mechanical material supporting microelectromechanical systems (MEMS) device development.

Microstructure and deposition kinetics of Nb prepared by chemical vapor deposition

2018 ◽  
Vol 32 (22) ◽  
pp. 1850257 ◽  
Author(s):  
Yan Wei ◽  
Da Wei Zhang ◽  
Jun Wang ◽  
Hong Zhong Cai ◽  
Xu Xiang Zhang ◽  
...  
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Low Temperature ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Deposition Kinetics ◽  
Hydrogen Flow

The deposition kinetics and microstructure of chemical vapor deposition (CVD) of Nb on the Mo substrate at different deposition variables is investigated. The morphology of CVD Nb is columnar, it exhibits a strong preferred orientation and its growth direction is perpendicular to the substrate surface, the deposition rate and grain size increased with the increase of deposition temperature. The deposition rate conforms to the Arrhenius formula, the activation energy [Formula: see text] at high temperature and low temperature is 0.85 kJ/mol and 7.2 kJ/mol, respectively. The rate-limiting step for CVD Nb at high temperature is chemical reaction step, whereas that is the mass transport step at low temperature. Chlorination temperature has a weak influence on deposition rate and grain structure, the deposition rate and grain size of CVD Nb increased with the increase of the chlorine flow and hydrogen flow, the maximum deposition rate is [Formula: see text], thus, the optimum deposition temperature is 1200[Formula: see text]C, chlorination temperature is 350[Formula: see text]C, hydrogen flow is 400 ml, chlorine flow is 200 ml.

Effect of NH3 Atmosphere on Preparation of Al2O3-AlN Composite Film by Laser CVD

2011 ◽  
Vol 484 ◽  
pp. 172-176
Author(s):  
Yu You ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Phase Composition ◽  
Chemical Vapor Deposition ◽  
Composite Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crystal Phase ◽  
Laser Chemical Vapor Deposition ◽  
Α Al2o3 ◽  
Laser Cvd ◽  
Source Materials

Al2O3-AlN composite film was first prepared by laser chemical vapor deposition (laser CVD) using aluminum acetylacetonate (Al(acac)3) and ammonia (NH3) as source materials. The effects of NH3 on the crystal phase, composition and microstructure were investigated. The crystal phase changed from α-Al2O3 to AlN gradually with increasing the mole ratio of NH3 to Ar. Al2O3-AlN composite film was obtained at NH3/Ar ratio ranged from 0.09 to 0.16 (Tdep = 862–887 K), and AlN granular grains were embedded in between α-Al2O3 polyhedral grains.

High-Throughput Growth of HfO2 Films Using Temperature-gradient Laser Chemical Vapor Deposition

2021 ◽  
Author(s):  
Rong TU ◽  
Ziming LIU ◽  
Chongjie WANG ◽  
Pengjian LU ◽  
Bingjian GUO ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
High Throughput ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Plane Boundary ◽  
Laser Chemical Vapor Deposition ◽  
Growth Modes ◽  
Further Development

Abstract The use of hafnia (HfO2) has facilitated recent advances in combining uprated dielectric layers (UDLs) and environmental barriers (EBs) in supercomputers. However, an extremely low deposition rate limits further development and fabrication efficiency of HfO2 films. In this study, high-throughput growth of HfO2 films was realized via laser chemical vapor deposition using a laser spot with a gradient temperature distribution. In HfO2 films fabricated by a single growth process, four regions with different morphologies could be discerned for deposition temperatures increasing from 1300 K to 1600 K: leaf-like, pyramid-like, bromeliad-like and pinecone-like. Two growth modes were observed for Regions I and II: Stranski-Krastanov and Volmer-Weber. Regions III and IV contained coexisting monoclinic and tetragonal HfO2 grains with an in-plane boundary for m-HfO2 (-110) {111}//t-HfO2 (1-11) {111}. The maximum deposition rate reached 362 μm/h, which was 102 - 104 times higher than that obtained using existing deposition methods.

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