Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM)

2013 ◽  
Vol 534 ◽  
pp. 126-130 ◽  
Author(s):  
Takashi Akahane ◽  
Takuya Komori ◽  
Jing Liu ◽  
Miftakhul Huda ◽  
Zulfakri bin Mohamad ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Carbon Film ◽  
Pattern Transfer ◽  
Si Substrate ◽  
Hard Mask ◽  
Dimethyl Siloxane ◽  
Transfer Pattern

In this work, improvement of the observation contrast was investigated by using a carbon film as the hard mask for pattern transfer of block copolymer (BCP) nanodots. The PS-PDMS (Poly (styrene-b-dimethyl siloxane)) block copolymer was adopted here. The observation contrast was greatly improved after transferring block copolymer (BCP) nanodots pattern to the underlying Si substrate through the carbon hard mask compared that before nanodot pattern transfer. Pattern transfer was also demonstrated to be very effective using carbon hard mask.

Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled Nanodots

2013 ◽  
Vol 596 ◽  
pp. 88-91
Author(s):  
Jing Liu ◽  
Miftakhul Huda ◽  
Zulfakri bin Mohamad ◽  
Hui Zhang ◽  
You Yin ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Molecular Mass ◽  
Pattern Transfer ◽  
Si Substrate ◽  
Carbon Tetrafluoride ◽  
Dimethyl Siloxane ◽  
Nanodot Arrays ◽  
Self Assembled ◽  
Ultrahigh Density ◽  
20 Nm

We investigated the fabrication of self-assembled nanodot array using poly (styrene)-poly (dimethyl-siloxane) (PS-PDMS) block copolymer and its transfer technique as a promising method to fabricate magnetic nanodot arrays for ultrahigh density recording. A carbon (C) layer with a high etch-resistance was especially adopted for magnetic nanodot fabrication. We fabricated PDMS nanodot using PS-PDMS block copolymer with a molecular mass of 11,700-2,900 g/mol. The nanodots were first transferred into silicon (Si) layer and then into C layer on Si substrate by carbon tetrafluoride (CF4) and oxygen (O2) reactive ion etching (RIE), respectively. We succeeded in fabricating C nanodots with a diameter of 10 nm and an average pitch of 20 nm.

Pattern Transfer of 23-Nm-Diameter Block Copolymer Self-Assembled Nanodots Using CF4 Etching with Carbon Hard Mask (CHM) as Mask

2013 ◽  
Vol 737 ◽  
pp. 133-136 ◽  
Author(s):  
Miftakhul Huda ◽  
Jing Liu ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Block Copolymer ◽  
Self Assembly ◽  
Pattern Transfer ◽  
Promising Alternative ◽  
Hard Mask ◽  
Dimethyl Siloxane ◽  
Assembly Technique ◽  
Self Assembled ◽  
Ultrahigh Density ◽  
Potential Use

The self-assembly of block copolymer (BCP) has demonstrated as promising alternative technology to overcome the limitation of conventional lithography owing to its ability in forming nanostructure with size 3-100 nm. In this study, we investigated a technique to transfer self-assembled nanodots of Poly(styrene-b-dimethyl siloxane) (PS-PDMS) BCP to Si. The pattern transfer of PS-PDMS nanodots with the pitch of 33 nm and the diameter of 23 nm using CF4 etching with Carbon Hard Mask (CHM) as Mask is demonstrated. Si nanopillar with height of 51 nm was fabricated. This result improves the potential use of PS-PDMS BCP self-assembly technique for fabrication nano-electronic devices, such as quantum dot solar cell and ultrahigh density of magnetic recording.

Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures

2018 ◽  
Author(s):  
Gregory Blachut ◽  
Stephen M. Sirard ◽  
Diane Hymes ◽  
Chris A. Mack ◽  
Michael J. Maher ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Pattern Transfer

Silicon Mold Etching with Hard Mask Stack Using Spherical Structure of Block Copolymer for Bit-Patterned Media with 2.8 Tbit/in.2

2013 ◽  
Vol 52 (8R) ◽  
pp. 086201
Author(s):  
Masaru Kurihara ◽  
Makoto Satake ◽  
Tetsuya Nishida ◽  
Yuko Tsuchiya ◽  
Yasuhiko Tada ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Silicon Mold ◽  
Bit Patterned Media ◽  
Patterned Media ◽  
Hard Mask ◽  
Spherical Structure

Epitaxial Growth and Thermal Stability of CoSi2 Layer on (100) Si from Co-C Films without Capping Layer

1999 ◽  
Vol 564 ◽  
Author(s):  
Hwa Sung Rhee ◽  
Dong Kyun Sohn ◽  
Byung Tae Ahn
Keyword(s):  
Thermal Stability ◽  
Epitaxial Growth ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carbon Film ◽  
Si Substrate ◽  
Capping Layer ◽  
Potential Applicability ◽  
Thermal Stability Of

AbstractA uniform epitaxial CoSi2 layer was grown on (100) Si substrate by rapid thermal annealing at 800°C in N2 ambient without capping layers from an amorphous cobalt-carbon film. The amorphous cobalt-carbon film was deposited on Si substrate by the pyrolysis of cyclopentadienyl dicarbonyl cobalt. Co(η5-C5H5)(CO)2. at 350°C. The leakage current measured on the junction, fabricated with the epitaxial CoSi2 layer and annealed at 1000°C for 30 s. was as low as that of the as-fabricated junction without silicide. indicating that epitaxial (100) CoSi2 is thermally stable at temperatures even above 1000°C and has a potential applicability to the salicide process in sub-half micron devices.

scholarly journals Influence of block copolymer feature size on reactive ion etching pattern transfer into silicon

2017 ◽  
Vol 28 (40) ◽  
pp. 404001 ◽  
Author(s):  
M Dialameh ◽  
F Ferrarese Lupi ◽  
D Imbraguglio ◽  
F Zanenga ◽  
A Lamperti ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Reactive Ion Etching ◽  
Pattern Transfer ◽  
Feature Size ◽  
Ion Etching ◽  
Etching Pattern

Self-Assembled Monolayer Films for Nanofabrication

1995 ◽  
Vol 380 ◽  
Author(s):  
Elizabeth A. Dobisz ◽  
F. Keith Perkins ◽  
Susan L. Brandow ◽  
Jeffrey M. Calvert ◽  
Christie R.K. Marrian
Keyword(s):  
Pattern Transfer ◽  
Si Substrate ◽  
Self Assembled Monolayer ◽  
Monolayer Films ◽  
Materials Development ◽  
Self Assembling ◽  
Novel Approach ◽  
Edge Roughness ◽  
Electroless Metallization ◽  
20 Nm

ABSTRACTCentral to nanofabrication is the ability to transfer a pattern from an imaging layer to a device or structure. At the smallest dimensions (<20 nm), thin resists or imaging layers have been used exclusively. The transfer of a pattern that is formed in a thin layer resist presents severe technological challenges to resist materials development. A novel approach based on self-assembling monomolecular layer resists is demonstrated with two organosilane films, formed from (aminoethylaminomethyl)phenethyltrimethoxysilane (PEDA) and 4-chloromethylphenyltrichlorosilane (CMPTS). The molecules have separate chemical functionalities for binding to a Si substrate and for promoting chemistry leading to catalysis and the growth of an electroless plated metal film. STM lithographic exposure destroys the ability of the molecule to bind to a catalyst, which initiates an electroless metallization. This forms the basis for a selective imaging and the pattern transfer process. A 25 nm thick Ni layer acts as a very robust etch mask, even as the unmasked regions of Si are etched as deep as 5 μm by reactive ion etching with SF6. With our process 15 nm lines with 3.3 nm edge roughness have been fabricated in the plated Ni and etched into the underlying Si. The development of the resist process and the STM lithography will be described and the resolution of the approach will be discussed.

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