Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled Nanodots

We investigated the fabrication of self-assembled nanodot array using poly (styrene)-poly (dimethyl-siloxane) (PS-PDMS) block copolymer and its transfer technique as a promising method to fabricate magnetic nanodot arrays for ultrahigh density recording. A carbon (C) layer with a high etch-resistance was especially adopted for magnetic nanodot fabrication. We fabricated PDMS nanodot using PS-PDMS block copolymer with a molecular mass of 11,700-2,900 g/mol. The nanodots were first transferred into silicon (Si) layer and then into C layer on Si substrate by carbon tetrafluoride (CF4) and oxygen (O2) reactive ion etching (RIE), respectively. We succeeded in fabricating C nanodots with a diameter of 10 nm and an average pitch of 20 nm.

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Pattern Transfer of 23-Nm-Diameter Block Copolymer Self-Assembled Nanodots Using CF4 Etching with Carbon Hard Mask (CHM) as Mask

Materials Science Forum ◽

10.4028/www.scientific.net/msf.737.133 ◽

2013 ◽

Vol 737 ◽

pp. 133-136 ◽

Cited By ~ 1

Author(s):

Miftakhul Huda ◽

Jing Liu ◽

Zulfakri bin Mohamad ◽

You Yin ◽

Sumio Hosaka

Keyword(s):

Block Copolymer ◽

Self Assembly ◽

Pattern Transfer ◽

Promising Alternative ◽

Hard Mask ◽

Dimethyl Siloxane ◽

Assembly Technique ◽

Self Assembled ◽

Ultrahigh Density ◽

Potential Use

The self-assembly of block copolymer (BCP) has demonstrated as promising alternative technology to overcome the limitation of conventional lithography owing to its ability in forming nanostructure with size 3-100 nm. In this study, we investigated a technique to transfer self-assembled nanodots of Poly(styrene-b-dimethyl siloxane) (PS-PDMS) BCP to Si. The pattern transfer of PS-PDMS nanodots with the pitch of 33 nm and the diameter of 23 nm using CF4 etching with Carbon Hard Mask (CHM) as Mask is demonstrated. Si nanopillar with height of 51 nm was fabricated. This result improves the potential use of PS-PDMS BCP self-assembly technique for fabrication nano-electronic devices, such as quantum dot solar cell and ultrahigh density of magnetic recording.

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Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM)

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.534.126 ◽

2013 ◽

Vol 534 ◽

pp. 126-130 ◽

Cited By ~ 2

Author(s):

Takashi Akahane ◽

Takuya Komori ◽

Jing Liu ◽

Miftakhul Huda ◽

Zulfakri bin Mohamad ◽

...

Keyword(s):

Block Copolymer ◽

Carbon Film ◽

Pattern Transfer ◽

Si Substrate ◽

Hard Mask ◽

Dimethyl Siloxane ◽

Transfer Pattern

In this work, improvement of the observation contrast was investigated by using a carbon film as the hard mask for pattern transfer of block copolymer (BCP) nanodots. The PS-PDMS (Poly (styrene-b-dimethyl siloxane)) block copolymer was adopted here. The observation contrast was greatly improved after transferring block copolymer (BCP) nanodots pattern to the underlying Si substrate through the carbon hard mask compared that before nanodot pattern transfer. Pattern transfer was also demonstrated to be very effective using carbon hard mask.

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SiO2 nanodot arrays using patterned functionalization of self-assembled block copolymer and selective adsorption of amine-terminated polydimethylsiloxane

Macromolecular Research ◽

10.1007/s13233-011-0903-z ◽

2011 ◽

Vol 19 (9) ◽

pp. 891-896 ◽

Cited By ~ 2

Author(s):

Su Min Kim ◽

Se Jin Ku ◽

Jin-Baek Kim

Keyword(s):

Block Copolymer ◽

Selective Adsorption ◽

Nanodot Arrays ◽

Self Assembled

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Self-Assembled Monolayer Films for Nanofabrication

MRS Proceedings ◽

10.1557/proc-380-23 ◽

1995 ◽

Vol 380 ◽

Author(s):

Elizabeth A. Dobisz ◽

F. Keith Perkins ◽

Susan L. Brandow ◽

Jeffrey M. Calvert ◽

Christie R.K. Marrian

Keyword(s):

Pattern Transfer ◽

Si Substrate ◽

Self Assembled Monolayer ◽

Monolayer Films ◽

Materials Development ◽

Self Assembling ◽

Novel Approach ◽

Edge Roughness ◽

Electroless Metallization ◽

20 Nm

ABSTRACTCentral to nanofabrication is the ability to transfer a pattern from an imaging layer to a device or structure. At the smallest dimensions (<20 nm), thin resists or imaging layers have been used exclusively. The transfer of a pattern that is formed in a thin layer resist presents severe technological challenges to resist materials development. A novel approach based on self-assembling monomolecular layer resists is demonstrated with two organosilane films, formed from (aminoethylaminomethyl)phenethyltrimethoxysilane (PEDA) and 4-chloromethylphenyltrichlorosilane (CMPTS). The molecules have separate chemical functionalities for binding to a Si substrate and for promoting chemistry leading to catalysis and the growth of an electroless plated metal film. STM lithographic exposure destroys the ability of the molecule to bind to a catalyst, which initiates an electroless metallization. This forms the basis for a selective imaging and the pattern transfer process. A 25 nm thick Ni layer acts as a very robust etch mask, even as the unmasked regions of Si are etched as deep as 5 μm by reactive ion etching with SF6. With our process 15 nm lines with 3.3 nm edge roughness have been fabricated in the plated Ni and etched into the underlying Si. The development of the resist process and the STM lithography will be described and the resolution of the approach will be discussed.

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Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.2 Patterned Media

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.596.78 ◽

2013 ◽

Vol 596 ◽

pp. 78-82

Author(s):

Takuya Komori ◽

Miftakhul Huda ◽

Takashi Akahane ◽

Muneyasu Masuda ◽

Jing Liu ◽

...

Keyword(s):

Block Copolymer ◽

High Resolution ◽

Ammonium Hydroxide ◽

Line Pattern ◽

Line Edge Roughness ◽

Patterned Media ◽

Tetramethyl Ammonium Hydroxide ◽

Edge Roughness ◽

Nanodot Arrays ◽

Self Assembled

We investigated the possibility of ordering of 12 nm pitced self-assembled nanodots from block copolymer (BCP) improved by the guide pattern with low line edge roughness (LER) for patterned media. We found that LER of the line pattern (σ-value) was reduced by using high-resolution salty development for HSQ resist line pattern fabrication compared with conventional tetramethyl ammonium hydroxide (TMAH) developer. By adopting this development technique to guide pattern fabrication, we demonstrated 10 rows of ordered self-assembled BCP nanodot arrays with a size of 6 nm and a pitch of 12 nm (5 Tbit/in.2) between the guide patterns.

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Self-assembled porous templates allow pattern transfer to poly(dimethyl siloxane) sheets through surface wrinkling

Polymer Journal ◽

10.1038/pj.2012.43 ◽

2012 ◽

Vol 44 (6) ◽

pp. 573-578 ◽

Cited By ~ 12

Author(s):

Hiroshi Yabu ◽

Yuta Saito ◽

Yuki Nakamichi ◽

Yuji Hirai ◽

So Fujinami ◽

...

Keyword(s):

Pattern Transfer ◽

Dimethyl Siloxane ◽

Surface Wrinkling ◽

Self Assembled

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Long Range Ordering of 5-nm-Sized Dot Arrays with a Pitch of <10 nm along EB-Drawn Guide Lines Using PS-PDMS Self-Assembly

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.643.3 ◽

2015 ◽

Vol 643 ◽

pp. 3-7

Author(s):

Hui Zhang ◽

Miftakhul Huda ◽

Jing Liu ◽

Yu Long Zhang ◽

Tao Jin ◽

...

Keyword(s):

Long Range ◽

Self Assembly ◽

The Self ◽

Low Molecular Weight ◽

Patterned Media ◽

Nanodot Arrays ◽

Self Assembled ◽

Ultrahigh Density ◽

Long Range Ordering ◽

Guide Lines

We demonstrate the possibility of forming long-range-ordered self-assembled nanodot arrays with dots size of 5 nm and pitches of 10×7.5 nm2using guide line templates and low molecular weight (MW) (4,700–1,200 g/mol) poly (styrene)-poly (dimethylsiloxane) (PS-PDMS) for application in ultrahigh density patterned media. The self-assembled PDMS nanodots are controlled in a long range by varying the heights and gaps of the guide lines. Adopting the 14-nm-high resist guide lines with suitable gaps, the 5-nm-sized and 10×7.5 nm2-pitched self-assembled nanodots were ordered in maximum 7 dot arrays with long-range order. The experimental results demonstrate that the method is possible for achieving patterned media with magnetic recording densities of 8.6 Tbit/in.2using low MW PS-PDMS and slim guide lines.

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