Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.2 Patterned Media

We investigated the possibility of ordering of 12 nm pitced self-assembled nanodots from block copolymer (BCP) improved by the guide pattern with low line edge roughness (LER) for patterned media. We found that LER of the line pattern (σ-value) was reduced by using high-resolution salty development for HSQ resist line pattern fabrication compared with conventional tetramethyl ammonium hydroxide (TMAH) developer. By adopting this development technique to guide pattern fabrication, we demonstrated 10 rows of ordered self-assembled BCP nanodot arrays with a size of 6 nm and a pitch of 12 nm (5 Tbit/in.2) between the guide patterns.