Large Remanent Polarization and Low Leakage Current in High-Tc 0.2Bi (Ni1/2Ti1/2)O3-0.8PbTiO3 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 804-807
Author(s):  
Zhen Kun Xie ◽  
Zhen Xing Yue
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
High Curie Temperature ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Average Grain Size ◽  
Measured Polarization

High Curie-temperature (Tc) polycrystalline 0.2Bi (Ni1/2Ti1/2)O3-0.8PbTiO3 (0.2BNT-0.8PT) thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates via an aqueous chemical solution deposition (CSD) technique. The thin films exhibited good crystalline quality and dense, uniform microstructures with an average grain size of 55 nm. The dielectric, piezoelectric and ferroelectric properties of the films was investigated. The permittivity peak appeared at 485 °C, which was 100 °C higher than that of Pb (Zr,Ti)O3 thin films. The local effective piezoelectric coefficient d33 was 45 pm/V at 3V. Moreover, a large remnant polarization with 2Pr up to 92 uC/cm2 and a small leakage current of 2.2×10-5 A/cm2 under an electric field of 400 kV/cm were obtained. The magnitude of the measured polarization and the high Curie temperature make the 0.2BNT-0.8PT films promising candidates for application in high-temperature ferroelectric and piezoelectric devices.

Structural and Electrical Properties of BaTio3 Thin Films Grown on p-Si Substrates with Different Device Designs

1993 ◽  
Vol 318 ◽  
Author(s):  
L. H. Chang ◽  
Q. X. Jia ◽  
W. A. Anderson
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Single Layer ◽  
Relative Dielectric Constant ◽  
Rf Magnetron Sputtering ◽  
Phonon Modes ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current

ABSTRACTRF magnetron sputtering of BaTiO3 on (100) p-Si was performed to produce a high-quality BaTiO3/p-Si interface and BaTi03 insulator gates with high dielectric constant and low leakage current. Through different processing and device designs, different capacitor structures, including single layer amorphous, single layer polycrystalline and bi-layer amorphous on polycrystal-line, were investigated in this study. Raman spectroscopy showed the optical phonon modes of the BaTiO3 thin films with different structures. The structural properties of the films were characterized by X-ray diffraction. Using both the quasistatic and the high-frequency capacitance-voltage measurements, the interface-trap density was estimated at high 1011 eV−1 cm−2. The relative dielectric constant of the composite structure was controlled in a range from 30 to 130. The leakage current density was as low as 8×10−10 A/cm2 at a field intensity of (2±0.5)×105 V/cm. Breakdown voltage varied from 5x105 to 2×106 V/cm.

scholarly journals Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

2021 ◽  
Author(s):  
M.L.V. Mahesh ◽  
Prem Pal ◽  
Bhanu Prasad V.V. ◽  
A.R. James
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sem Analysis ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
Low Loss ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current

Abstract Multilayer thin films of (Ba0.50Sr0.50)TiO3 (BST) and Ba(Zr0.15Ti0.85)O3 (BZT) were designed and grown using Pulsed LASER Deposition technology. The periodic (BST/BZT)n thin films were deposited on Pt‹111›/SiO2/Si substrates. X-ray diffraction reveals the presence of a polycrystalline, perovskite structure corresponding to the bilayer thin film stacks. SEM analysis confirmed the multilayer structure without any interdiffusion across layers. It was also found that the dielectric and ferroelectric properties of the thin films are strongly influenced by the periodic hetero-structures. The thin film stacks exhibit significantly higher tunabilities, comparable with multilayer thin films grown on various single crystal substrates such as LaAlO3, MgO and SrTiO3. Possible mechanisms explaining the other observed attributes such as lower dielectric loss resulting in higher Figure of Merit (FoM), low leakage current are discussed. The effect of incorporating a comparatively lower permittivity thin film in the multilayer stacks is presented. The observed properties of such multilayer structured films help in realization of low loss and highly tunable applications.

Effects of Rare Earth Gd Doping on Ferroelectric Properties of PbZr0.52Ti0.48O3 Thin Films Prepared by Sol–Gel Methods

2007 ◽  
Vol 336-338 ◽  
pp. 21-23
Author(s):  
Qiu Sun ◽  
Ying Song ◽  
Fu Ping Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Thermal Annealing Process ◽  
Better Than

The Pb(Zr0.52Ti0.48)O3 thin films with 0-2at.%Gd dopants (denoted as PGZT) were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel technique and a rapid thermal annealing process. The structures of PGZT films were characterized and the ferroelectric properties such as P–V loop, C–V and I–V characteristics were investigated. Improved polarization (2Pr = 46.373 μC/cm2) and the low leakage current (J = 1.5×10-9 A/cm2 at the electric field of 400 kV/cm) were obtained in the PZT thin film with 1at.% Gd dopant, which was better than that of the pure PZT thin film (2Pr = 39.099 μC/cm2, J = 4.3×10-8A/cm2). With the Gd contents up to 2at.%, a decreased remanent polarization was found.

scholarly journals High Curie Temperature BiFeO3-BaTiO3 Lead-free Piezoelectric Ceramics: Ga3+ Doping and Enhanced Insulation Properties

2020 ◽  
Author(s):  
Xiao-yan Peng ◽  
Yu-Cheng Tang ◽  
Boping Zhang ◽  
Bo-wei Xun ◽  
Jing-Ru Yu
Keyword(s):  
Curie Temperature ◽  
Leakage Current ◽  
Piezoelectric Properties ◽  
Lead Free ◽  
High Resistivity ◽  
High Curie Temperature ◽  
Low Oxygen ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Leakage Mechanism

Abstract BiFeO3-BaTiO3 (BF-BT) is a promising high temperature lead-free piezoceramics due to their excellent piezoelectric properties with high Curie temperature (TC>500 °C). While the high leakage current density severely restricted its application. In this work, the leakage mechanism relative to the dielectric properties and piezoelectric properties were systematically studied with a special emphasis on gallium (Ga3+) adding effect in 0.7BiFe(1-x)GaxO3-0.3BaTiO3 (BFGax-BT, 0≤x≤0.10) ceramics. A high resistivity (ρ) of 2.73×1012 Ω·cm-1 and low leakage current (J) of 7.78×10-9 A·cm-2 were achieved at x=0.06, which attributes to the low oxygen vacancies (B). The J-E curves reveal different type of conduction process in BFGax-BT ceramics, including Ohmic conduction, space-charge-limited conduction (SCLC) mechanism and interface-limited Schottky emission. The BFGa0.06-BT ceramic exhibits excellent piezoelectric performance: d33=174 pC·N-1, TC=497 °C, kp=29 %.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution DepositionΨ

2006 ◽  
Vol 933 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Lattice Structure ◽  
Hysteresis Loops ◽  
Secondary Phase ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Chemical Solutions ◽  
Mn Substitution ◽  
Mn Doped

AbstractMn-substituted BiFeO3 (BFO) thin films were formed by chemical solutions deposition on Pt/Ti/SiO2/Si(100) structures. Effects of the Mn-substitution on the structure and ferroelectricity of BFO films were examined. We found that the lattice structure of the film is sensitive to the Mn-substitution and the secondary phase is appears in 50% Mn-substituted BFO films. The leakage current were increased with the Mn-substitution. However, the 5% Mn-substituted BFO film shows low leakage current than undoped BFO films in a high electric field than 0.5 MV/cm. Due to the low leakage current in Mn-doped 3, 5 and 7% BFO films, the saturated P-E hysteresis loops with remanent polarization around 100 μC/cm2 were obtained at RT.

Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O9–Bi3TiTaO9 solid solution thin film

2001 ◽  
Vol 79 (13) ◽  
pp. 2067-2069 ◽  
Author(s):  
Masatoshi Mitsuya ◽  
Norimasa Nukaga ◽  
Takayuki Watanabe ◽  
Hiroshi Funakubo ◽  
Keisuke Saito ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Low Leakage ◽  
Low Leakage Current

Low Temperature Deposition of High Dielectric Constant Thin Films for Decoupling Capacitor Applications

1990 ◽  
Vol 203 ◽  
Author(s):  
P. Li ◽  
B. Gittleman ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Promising Alternative ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Annealing Effects ◽  
Temperature Deposition ◽  
High Dielectric

ABSTRACTHigh dielectric constant thin films for packaging applications were studied. Compared with polycrystalline or epitaxial ferroelectric thin films amorphous ferroelectric films are a promising alternative because of their ease of processing and low leakage current. Reactive Partially Ionized Beam deposition (RPIB) offers a new approach to deposit high dielectric constant films at a low substrate temperature. As an example, the growth of amorphous BaTiOs thin films using RPIB deposition is described. The films were characterized in terms of dielectric constant and leakage current. The annealing effects on the film properties are also discussed.

Preparation and Electrical Properties of Bi0.9Nd0.1Fe0.925Mn0.075O3 Thin Films

2012 ◽  
Vol 557-559 ◽  
pp. 1933-1936
Author(s):  
Ning Yan ◽  
Sheng Hong Yang ◽  
Yue Li Zhang
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Low Leakage ◽  
Bifeo3 Thin Films ◽  
Low Leakage Current

Pure BiFeO3(BFO) and Bi0.9Nd0.1Fe0.925Mn0.075O3(BNFM) thin films were deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel method. X-ray diffraction analysis showed that all the films were single perovskite structure and a phase transition appeared in Nd–Mn codoped BiFeO3 thin films. Electrical measurements indicated that the ferroelectric properties of BFO thin films were significantly improved by Nd and Mn codoping. BNFM films exhibit a low leakage current and a good P-E hysteresis loop. The remanent polarization (Pr) value of 74μC/cm2has been obtained in BNFM films, while the coercive field (Ec) is 184kV/cm.

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