Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution DepositionΨ

2006 ◽  
Vol 933 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Lattice Structure ◽  
Hysteresis Loops ◽  
Secondary Phase ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Chemical Solutions ◽  
Mn Substitution ◽  
Mn Doped

AbstractMn-substituted BiFeO3 (BFO) thin films were formed by chemical solutions deposition on Pt/Ti/SiO2/Si(100) structures. Effects of the Mn-substitution on the structure and ferroelectricity of BFO films were examined. We found that the lattice structure of the film is sensitive to the Mn-substitution and the secondary phase is appears in 50% Mn-substituted BFO films. The leakage current were increased with the Mn-substitution. However, the 5% Mn-substituted BFO film shows low leakage current than undoped BFO films in a high electric field than 0.5 MV/cm. Due to the low leakage current in Mn-doped 3, 5 and 7% BFO films, the saturated P-E hysteresis loops with remanent polarization around 100 μC/cm2 were obtained at RT.

scholarly journals Simple and Rapid Fabrication of Na0.5K0.5NbO3 Thin Films by a Chelate Route

2013 ◽  
Vol 2013 ◽  
pp. 1-7
Author(s):  
A. Fernández Solarte ◽  
N. Pellegri ◽  
O. de Sanctis ◽  
M. G. Stachiotti
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chelating Agent ◽  
Secondary Phase ◽  
Secondary Phases ◽  
Solution Synthesis ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Ferroelectric Hysteresis

Na0.5K0.5NbO3 (NKN) thin films were prepared by a chelate route which offers the advantage of a simple and rapid solution synthesis. The route is based on the use of acetoin as a chelating agent. The process was optimized by investigating the effects of alkaline volatilization on film properties. While we observed no evidence of stoichiometry problems due to potassium volatilization loss during the heat treatments, thin films synthesized with insufficient sodium excess presented a potassium-rich secondary phase, which has a significant influence on the ferroelectric properties. We show that the amount of spurious phase decreases with increasing Na+ concentration, in such a way that a 20 mol% Na+ excess is necessary to fully compensate the volatilization loss that occurred during the heat treatment. In this way, NKN thin films annealed at 650°C presented a well-crystallized perovskite structure, no secondary phases, well-defined ferroelectric hysteresis loops (Pr~9 μC/cm2, EC~45 kV/cm), and low leakage current density (2×10-7 A/cm2 at 80 kV/cm).

Low Temperature Deposition of High Dielectric Constant Thin Films for Decoupling Capacitor Applications

1990 ◽  
Vol 203 ◽  
Author(s):  
P. Li ◽  
B. Gittleman ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Promising Alternative ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Annealing Effects ◽  
Temperature Deposition ◽  
High Dielectric

ABSTRACTHigh dielectric constant thin films for packaging applications were studied. Compared with polycrystalline or epitaxial ferroelectric thin films amorphous ferroelectric films are a promising alternative because of their ease of processing and low leakage current. Reactive Partially Ionized Beam deposition (RPIB) offers a new approach to deposit high dielectric constant films at a low substrate temperature. As an example, the growth of amorphous BaTiOs thin films using RPIB deposition is described. The films were characterized in terms of dielectric constant and leakage current. The annealing effects on the film properties are also discussed.

Effect of La Contents on La-Doped Bi2Ti2O7 Dielectric Thin Films

2013 ◽  
Vol 750-752 ◽  
pp. 931-935
Author(s):  
Xue Na Yang ◽  
Jian An Liu ◽  
Bai Biao Huang ◽  
Si Jiang Gao
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Dielectric Thin Films ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Xrd Patterns ◽  
High Dielectric ◽  
La Doped

La-doped (Bi1-xLax)2Ti2O7 (BLTO) thin films with different La contents have been grown by CSD method. All the XRD patterns of the samples showed that the films were polycrystalline films. The intensities of the peaks decreased with the increasing of La contents. The general trend of the changes of leakage current was decreased with the increasing of x. The case of dielectric constant as a function of La content is complicated. The rule of change of the dielectric constant is different with different la contents. In view of dielectric constant and dielectric loss, we think that the film of x=0.2 has relative low leakage current and high dielectric constant, which is considered to be adequate for a DRAM.

scholarly journals Dielectric properties characterization of La- and Dy-doped BiFeO3 thin films

2007 ◽  
Vol 22 (8) ◽  
pp. 2179-2184 ◽  
Author(s):  
Peter Kr. Petrov ◽  
Vaijayanti R. Palkar ◽  
Alexander K Tagantsev ◽  
Hsin-I Chien ◽  
K. Prashanthi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Electric Field ◽  
Leakage Current ◽  
Structural Features ◽  
Type I ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Dc Electric Field ◽  
Measuring Frequency

The dielectric response of La- and Dy- doped BiFeO3 thin films at microwave frequencies (up to 12 GHz) has been monitored as a function of frequency, direct current (dc) electric field, and magnetic field in a temperature range from 25 to 300 °C. Both the real and imaginary parts of the response have been found to be non-monotonic (oscillating) functions of measuring frequency. These oscillations are not particularly sensitive to a dc electric field; however, they are substantially dampened by a magnetic field. The same effect has been observed when the volume of the characterized sample is increased. This phenomenon is attributed to the presence of a limited number of structural features with a resonance type response. The exact origin of these features is unknown at present. Leakage current investigations were performed on the whole set of films. The films were highly resistive with low leakage current, thereby giving us confidence in the microwave measurements. These typically revealed ‘N’-type I-V characteristics.

Structural and Electrical Properties of BaTio3 Thin Films Grown on p-Si Substrates with Different Device Designs

1993 ◽  
Vol 318 ◽  
Author(s):  
L. H. Chang ◽  
Q. X. Jia ◽  
W. A. Anderson
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Single Layer ◽  
Relative Dielectric Constant ◽  
Rf Magnetron Sputtering ◽  
Phonon Modes ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current

ABSTRACTRF magnetron sputtering of BaTiO3 on (100) p-Si was performed to produce a high-quality BaTiO3/p-Si interface and BaTi03 insulator gates with high dielectric constant and low leakage current. Through different processing and device designs, different capacitor structures, including single layer amorphous, single layer polycrystalline and bi-layer amorphous on polycrystal-line, were investigated in this study. Raman spectroscopy showed the optical phonon modes of the BaTiO3 thin films with different structures. The structural properties of the films were characterized by X-ray diffraction. Using both the quasistatic and the high-frequency capacitance-voltage measurements, the interface-trap density was estimated at high 1011 eV−1 cm−2. The relative dielectric constant of the composite structure was controlled in a range from 30 to 130. The leakage current density was as low as 8×10−10 A/cm2 at a field intensity of (2±0.5)×105 V/cm. Breakdown voltage varied from 5x105 to 2×106 V/cm.

Oxygen transport during annealing of Pb(Zr,Ti)O3 thin films in O2 gas and its effect on their conductivity

2001 ◽  
Vol 16 (10) ◽  
pp. 3005-3008 ◽  
Author(s):  
F. Ayguavives ◽  
B. Agius ◽  
B. EaKim ◽  
I. Vickridge
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Low Leakage ◽  
Pzt Film ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Current Densities

Lead zirconate titanate (PZT) thin films were deposited in a reactive argon/oxygen gas mixture by radio-frequency-magnetron sputtering. The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using oxygen 18 as a tracer, to study the oxygen diffusion in the thin films. Electrical properties and crystallization were optimized with a 90-nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550 °C) show very low leakage current densities (J = 2 × 10−8 A/cm2 at 1 V). In this article we show that a strong correlation exists between the oxygen composition in the PZT film and the leakage current density.

scholarly journals Solution-processed BiFeO3 thin films with low leakage current

2021 ◽  
Author(s):  
Alfredo Blázquez Martínez ◽  
Nicolas Godard ◽  
Naveen Aruchamy ◽  
Cosme Milesi-Brault ◽  
Oana Condurache ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Solution Processed ◽  
Low Leakage ◽  
Bifeo3 Thin Films ◽  
Low Leakage Current

Electrical Properties and Film Structures of (BaxSr1−x)TiO3 Thin Films by RF Sputtering

1992 ◽  
Vol 284 ◽  
Author(s):  
T. Makita ◽  
T. Horikawa ◽  
H. Kuroki ◽  
M. Kataoka ◽  
J. Tanimura ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Rf Sputtering ◽  
Random Access ◽  
Film Structure ◽  
Low Leakage ◽  
Structure Changes ◽  
Low Leakage Current ◽  
Columnar Grains

ABSTRACTThin films of (BaxSrj-x)TiO3 (BST) deposited by RF sputtering have been studied for the application to the capacitor material of dynamic random access memory (DRAM). The effects of film structures on the dielectric constant and the leakage current were investigated. The films deposited at 550–600°C consist of granular grains, and the films deposited above 650°C contain columnar grains. The dielectric constant is related to the grain size in the direction of thickness. The leakage current increases as the film structure changes from granular to columnar. The low leakage current (less than 10−8 A/cm2 at +2 and -2 V) and the small value of equivalent SiO2 thickness (0.9 nm) were attained in the (Ba065Sr035) TiO3 thin films.

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