Structural and Electrical Properties of BaTio3 Thin Films Grown on p-Si Substrates with Different Device Designs

1993 ◽  
Vol 318 ◽  
Author(s):  
L. H. Chang ◽  
Q. X. Jia ◽  
W. A. Anderson
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Single Layer ◽  
Relative Dielectric Constant ◽  
Rf Magnetron Sputtering ◽  
Phonon Modes ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current

ABSTRACTRF magnetron sputtering of BaTiO3 on (100) p-Si was performed to produce a high-quality BaTiO3/p-Si interface and BaTi03 insulator gates with high dielectric constant and low leakage current. Through different processing and device designs, different capacitor structures, including single layer amorphous, single layer polycrystalline and bi-layer amorphous on polycrystal-line, were investigated in this study. Raman spectroscopy showed the optical phonon modes of the BaTiO3 thin films with different structures. The structural properties of the films were characterized by X-ray diffraction. Using both the quasistatic and the high-frequency capacitance-voltage measurements, the interface-trap density was estimated at high 1011 eV−1 cm−2. The relative dielectric constant of the composite structure was controlled in a range from 30 to 130. The leakage current density was as low as 8×10−10 A/cm2 at a field intensity of (2±0.5)×105 V/cm. Breakdown voltage varied from 5x105 to 2×106 V/cm.

Low Temperature Deposition of High Dielectric Constant Thin Films for Decoupling Capacitor Applications

1990 ◽  
Vol 203 ◽  
Author(s):  
P. Li ◽  
B. Gittleman ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Promising Alternative ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Annealing Effects ◽  
Temperature Deposition ◽  
High Dielectric

ABSTRACTHigh dielectric constant thin films for packaging applications were studied. Compared with polycrystalline or epitaxial ferroelectric thin films amorphous ferroelectric films are a promising alternative because of their ease of processing and low leakage current. Reactive Partially Ionized Beam deposition (RPIB) offers a new approach to deposit high dielectric constant films at a low substrate temperature. As an example, the growth of amorphous BaTiOs thin films using RPIB deposition is described. The films were characterized in terms of dielectric constant and leakage current. The annealing effects on the film properties are also discussed.

Effect of La Contents on La-Doped Bi2Ti2O7 Dielectric Thin Films

2013 ◽  
Vol 750-752 ◽  
pp. 931-935
Author(s):  
Xue Na Yang ◽  
Jian An Liu ◽  
Bai Biao Huang ◽  
Si Jiang Gao
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Dielectric Thin Films ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Xrd Patterns ◽  
High Dielectric ◽  
La Doped

La-doped (Bi1-xLax)2Ti2O7 (BLTO) thin films with different La contents have been grown by CSD method. All the XRD patterns of the samples showed that the films were polycrystalline films. The intensities of the peaks decreased with the increasing of La contents. The general trend of the changes of leakage current was decreased with the increasing of x. The case of dielectric constant as a function of La content is complicated. The rule of change of the dielectric constant is different with different la contents. In view of dielectric constant and dielectric loss, we think that the film of x=0.2 has relative low leakage current and high dielectric constant, which is considered to be adequate for a DRAM.

SrTiO3 Films Prepared by MOCVD Using Novel Sr Source

1994 ◽  
Vol 361 ◽  
Author(s):  
Hideaki Yamauchi ◽  
Takafumi Kimura ◽  
Masao Yamada
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Thick Films ◽  
Relative Dielectric Constant ◽  
Si Substrates ◽  
Vaporization Temperature

ABSTRACTSrTiO3 thin films have been prepared by MOCVD. A novel Sr source of Sr(DPM)2-tetraen2 was used to stabilize source delivery and to reduce the vaporization temperature of Sr source. Films were deposited on Pt/Ta/Si substrates at deposition temperatures from 450 °C to 600 °C. The relative dielectric constant was about 220 at the deposition temperatures from 550 °C to 600 °C for as-deposited 90-nm-thick films. The leakage current density was in the range of 10−7 A/cm2, typically.

MICROSTRUCTURE AND PROPERTIES OF Sm-DOPED BaTiO3 SPUTTERED FILMS: EFFECTS OF POST-ANNEALINGS AND DOPANT CONTENT

2011 ◽  
Vol 25 (11) ◽  
pp. 1559-1565
Author(s):  
C. H. WU ◽  
J. P. CHU ◽  
S. F. WANG ◽  
W. Z. CHANG
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Dopant Content ◽  
Si Substrates ◽  
Sputtered Films ◽  
Annealing Temperatures ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Electrical Characterizations ◽  
Sputtering System

Sm-doped BaTiO 3 thin films with ~200 nm thickness fabricated by rf magnetron sputtering system onto Pt/Ti/SiO 2/ Si substrates have been investigated. The effects of postannealing and the dopant content in a range of 0.1 to 2.2 at.% on microstructure and electrical properties were studied. The films were found to be amorphous in the as-deposited state and became fully crystallized after annealing at 750°C and above. The addition of Sm in the BaTiO 3 films resulted in the inhibition of grain growth. Electrical characterizations show that the dielectric permittivity increased with increasing annealing temperatures and the 2.2% Sm-doped film had the low leakage current of 1.29×10-9 A at an applied electric field of 100 KV/cm.

Electrical Properties and Film Structures of (BaxSr1−x)TiO3 Thin Films by RF Sputtering

1992 ◽  
Vol 284 ◽  
Author(s):  
T. Makita ◽  
T. Horikawa ◽  
H. Kuroki ◽  
M. Kataoka ◽  
J. Tanimura ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Rf Sputtering ◽  
Random Access ◽  
Film Structure ◽  
Low Leakage ◽  
Structure Changes ◽  
Low Leakage Current ◽  
Columnar Grains

ABSTRACTThin films of (BaxSrj-x)TiO3 (BST) deposited by RF sputtering have been studied for the application to the capacitor material of dynamic random access memory (DRAM). The effects of film structures on the dielectric constant and the leakage current were investigated. The films deposited at 550–600°C consist of granular grains, and the films deposited above 650°C contain columnar grains. The dielectric constant is related to the grain size in the direction of thickness. The leakage current increases as the film structure changes from granular to columnar. The low leakage current (less than 10−8 A/cm2 at +2 and -2 V) and the small value of equivalent SiO2 thickness (0.9 nm) were attained in the (Ba065Sr035) TiO3 thin films.

Large Remanent Polarization and Low Leakage Current in High-Tc 0.2Bi (Ni1/2Ti1/2)O3-0.8PbTiO3 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 804-807
Author(s):  
Zhen Kun Xie ◽  
Zhen Xing Yue
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
High Curie Temperature ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Average Grain Size ◽  
Measured Polarization

High Curie-temperature (Tc) polycrystalline 0.2Bi (Ni1/2Ti1/2)O3-0.8PbTiO3 (0.2BNT-0.8PT) thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates via an aqueous chemical solution deposition (CSD) technique. The thin films exhibited good crystalline quality and dense, uniform microstructures with an average grain size of 55 nm. The dielectric, piezoelectric and ferroelectric properties of the films was investigated. The permittivity peak appeared at 485 °C, which was 100 °C higher than that of Pb (Zr,Ti)O3 thin films. The local effective piezoelectric coefficient d33 was 45 pm/V at 3V. Moreover, a large remnant polarization with 2Pr up to 92 uC/cm2 and a small leakage current of 2.2×10-5 A/cm2 under an electric field of 400 kV/cm were obtained. The magnitude of the measured polarization and the high Curie temperature make the 0.2BNT-0.8PT films promising candidates for application in high-temperature ferroelectric and piezoelectric devices.

Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution DepositionΨ

2006 ◽  
Vol 933 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Lattice Structure ◽  
Hysteresis Loops ◽  
Secondary Phase ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Chemical Solutions ◽  
Mn Substitution ◽  
Mn Doped

AbstractMn-substituted BiFeO3 (BFO) thin films were formed by chemical solutions deposition on Pt/Ti/SiO2/Si(100) structures. Effects of the Mn-substitution on the structure and ferroelectricity of BFO films were examined. We found that the lattice structure of the film is sensitive to the Mn-substitution and the secondary phase is appears in 50% Mn-substituted BFO films. The leakage current were increased with the Mn-substitution. However, the 5% Mn-substituted BFO film shows low leakage current than undoped BFO films in a high electric field than 0.5 MV/cm. Due to the low leakage current in Mn-doped 3, 5 and 7% BFO films, the saturated P-E hysteresis loops with remanent polarization around 100 μC/cm2 were obtained at RT.

REDUCED LEAKAGE CURRENT AND ENHANCED MAGNETIC PROPERTIES OF (Bi,Nd)FeO3 THIN FILMS GROWN ON (Ba,Sr)TiO3 BOTTOM LAYER

2012 ◽  
Vol 05 (03) ◽  
pp. 1250032 ◽  
Author(s):  
C. B. MA ◽  
X. G. TANG ◽  
D. G. CHEN ◽  
Q. X. LIU ◽  
Y. P. JIANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Coupling Reaction ◽  
Bottom Layer ◽  
Rf Magnetron Sputtering ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Multiferroic Heterostructure

A multiferroic heterostructure composed of ( Bi 0.875 Nd 0.125) FeO 3 (BNF) are grown on ( Ba 0.65 Sr 0.35) TiO 3(BST) buffered Pt/Ti/SiO2/Si(100) substrate by rf-magnetron sputtering. The heterostructure BNF/BST exhibits a quite low leakage current (3.7 × 10-7 A/cm2 at 300 kV/cm) and dielectric loss (0.0036 at 100 kHz) at room temperature. The saturated magnetization and the coercive field of the BST/BNF heterostructure are 37.7 emu/cm3 and 357.6 Oe, respectively. The low leakage current owed to the action of BST in the charge transfer between BNF and the bottom electrode, the coupling reaction between BST and BNF films. And the better crystallization in BNF/BST heterostructure thin film lead to the ferromagnetic properties enhanced.

scholarly journals Dielectric properties characterization of La- and Dy-doped BiFeO3 thin films

2007 ◽  
Vol 22 (8) ◽  
pp. 2179-2184 ◽  
Author(s):  
Peter Kr. Petrov ◽  
Vaijayanti R. Palkar ◽  
Alexander K Tagantsev ◽  
Hsin-I Chien ◽  
K. Prashanthi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Electric Field ◽  
Leakage Current ◽  
Structural Features ◽  
Type I ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Dc Electric Field ◽  
Measuring Frequency

The dielectric response of La- and Dy- doped BiFeO3 thin films at microwave frequencies (up to 12 GHz) has been monitored as a function of frequency, direct current (dc) electric field, and magnetic field in a temperature range from 25 to 300 °C. Both the real and imaginary parts of the response have been found to be non-monotonic (oscillating) functions of measuring frequency. These oscillations are not particularly sensitive to a dc electric field; however, they are substantially dampened by a magnetic field. The same effect has been observed when the volume of the characterized sample is increased. This phenomenon is attributed to the presence of a limited number of structural features with a resonance type response. The exact origin of these features is unknown at present. Leakage current investigations were performed on the whole set of films. The films were highly resistive with low leakage current, thereby giving us confidence in the microwave measurements. These typically revealed ‘N’-type I-V characteristics.

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