Changes in Surface Morphology, Deflection and Wear of Microcrystalline Diamond Film Observed during Sliding Tests against Si3N4 Balls

2016 ◽  
Vol 674 ◽  
pp. 145-151 ◽  
Author(s):  
Andrei Bogatov ◽  
Rainer Traksmaa ◽  
Vitali Podgursky
Keyword(s):  
Surface Morphology ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Atomic Force ◽  
Test Conditions ◽  
Sliding Test ◽  
Si Wafer

The study investigates alterations in surface morphology of microcrystalline diamond (MCD) film under reciprocating sliding test conditions. The MCD film was grown by microwave plasma enhanced chemical vapor deposition (MW-PECVD) on (100)-oriented Si wafer. The surface morphology was characterized by optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM) and mechanical profilometry. The formation of ripples on the wear scar surfaces was observed. The normalized wear rate (mm3/mN) of diamond film was evaluated using different approaches in order to understand the influence of diamond film deflection to wear.

Growth of Single-Walled Carbon Nanotubes by Microwave Plasma Enhanced Chemical Vapor Deposition

2004 ◽  
Vol 858 ◽  
Author(s):  
Matthew R. Maschmann ◽  
Amit Goyal ◽  
Zafar Iqbal ◽  
Timothy S. Fisher ◽  
Roy Gat
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Force Microscopy ◽  
Single Walled Carbon ◽  
Atomic Force ◽  
Walled Carbon Nanotubes

ABSTRACTSingle-walled carbon nanotubes (SWCNTs) have been grown for the first time by microwave plasma-enhanced chemical vapor deposition (PECVD) at 800°C using methane as the precursor and bimetallic Mo/Co catalyst supported on MgO dispersed on a silicon wafer. The nanotubes grown consist of bundles, each composed of individual tubes of a single diameter associated with either metallic or semiconducting SWCNTs, based on characterization by Raman spectroscopy. Field-emission scanning electron microscopy and atomic force microscopy show that the bundles are relatively thin – 5 to 10 nm in diameter – and up to a few micrometers in length. The results are compared with those obtained on recently reported SWCNTs grown by radio frequency PECVD.

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

Study of the Adhesion and Biocompatibility of Nanocrystalline Diamond (NCD) Films on 3C-SiC Substrates

2009 ◽  
Vol 1203 ◽  
Author(s):  
Humberto Gomez ◽  
Christopher L. Frewin ◽  
Ashok Kumar ◽  
Stephen Saddow ◽  
Christopher Locke
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Grain Structure ◽  
Plasma Chemical Vapor Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis ◽  
Fixed Cell

AbstractThe unique material characteristics of silicon carbide (SiC) and nanocrystalline diamond (NCD) present solutions to many problems in conventional MEMS applications and especially for biologically compatible devices. Both materials have a wide bandgap along with excellent optical, thermal and mechanical properties. Initial experiments were performed for NCD films grown on 3C-SiC using a microwave plasma chemical vapor deposition (MPCVD) reactor. It was observed from the atomic force microscopy (AFM) analysis that the NCD films on 3C-SiC possess a more uniform grain structure, with sizes ranging from approximately 5 – 10 nm, whereas on the Si surface, the NCD has large, non-unioform inclusions of grains ≈1 μm in size. The in vitro biocompatibility performance of NCD/3C-SiC was measured utilizing 2 immortalized neural cell lines: H4 human neuroglioma (ATCC #HTB-148) and PC12 rat pheochromocytoma (ATCC #CRL-1721). MTT (3-(4,5-Dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide) assay was used to measure viability of the cells for 96 hours and live/ fixed cell. AFM was performed to determine the general cell morphology. The H4 cell line shows a good biocompatibility level with hydrogen treated NCD as compared with the cell treated polystyrene control well, while the PC12 cells show decreased viability on the NCD surfaces.

Determination of diamond [100] and [111] growth rate and formation of highly oriented diamond film by microwave plasma-assisted chemical vapor deposition

1995 ◽  
Vol 10 (12) ◽  
pp. 3115-3123 ◽  
Author(s):  
Hideaki Maeda ◽  
Kyo Ohtsubo ◽  
Miki Irie ◽  
Nobutaka Ohya ◽  
Katsuki Kusakabe ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Relative Growth Rate ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Relative Growth ◽  
Homoepitaxial Growth ◽  
Novel Method

A novel method was proposed for measuring the epitaxial growth rate of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD). Cubo-octahedral crystals were formed on an Si(100) wafer and were used as the substrate in the homoepitaxial growth. Growth rates of the {100} and {111} were simultaneously measured from the change in the top view size of crystals. Thus, the relative growth rate of {100} to {111} was obtained without any limitation of its value. The homoepitaxial growth rate was strongly affected by the type of diamond faces, CH4 concentration in the gas phase, and deposition temperature. The growth rate of {100} was more dependent on CH4 concentration than that of {111}, while the activation energy for the [100] growth was about half that for the [111] growth. These tendencies were in accord with growth mechanisms proposed for each diamond plane. Reaction conditions were optimized based on the relative growth rate of (100) to (111) planes, and a highly oriented (100) diamond film with a quite smooth surface was formed on an Si(100) wafer.

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