High-Quality Low - Phosphorous Manganese Alloys for Production of Steel of Low-Temperature Reliability

2020 ◽  
Vol 839 ◽  
pp. 99-105
Author(s):  
Olga I. Nohrina ◽  
Irina D. Rogihina ◽  
Marina A. Golodova ◽  
Ivan E. Proshunin ◽  
Denis V. Valuev
Keyword(s):  
Low Temperature ◽  
High Quality ◽  
Manganese Ores ◽  
Manganese Alloys

The problem of enrichment and dephosphorization of poor manganese ores for receiving the low-phosphorous alloys necessary for smelting of steel of low-temperature reliability is considered.

AISI TYPE P20

Alloy Digest ◽  
1982 ◽  
Vol 31 (1) ◽  
Keyword(s):  
Low Temperature ◽  
Tool Steel ◽  
Die Casting ◽  
Heat Treating ◽  
High Quality ◽  
Medium Carbon ◽  
Casting Alloys ◽  
Steel Mills ◽  
Aisi Type ◽  
Quality Tool

Abstract AISI Type P20 is a chromium-molybdenum tool steel of medium carbon content. It usually is supplied in the prehardened condition (about 300 Brinell) so that the cavity can be machined and the mold or die placed directly in service; however, for some uses further treatments are employed. It is produced to high-quality tool-steel standards to permit a high luster to be achieved on the surface of the polished die cavity. P20 is used for molds for plastics and for die-casting dies for zinc and other low-temperature casting alloys. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on forming, heat treating, and machining. Filing Code: TS-393. Producer or source: Tool steel mills.

Continuous low-temperature spray drying approach for efficient production of high quality native rice starch

2021 ◽  
pp. 1-16
Author(s):  
Jamie Boon Jun Tay ◽  
Xinying Chua ◽  
Cailing Ang ◽  
Kelvin Kim Tha Goh ◽  
Gomathy Sandhya Subramanian ◽  
...  
Keyword(s):  
Low Temperature ◽  
Spray Drying ◽  
Rice Starch ◽  
Efficient Production ◽  
High Quality

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

Growth of high-quality InN using low-temperature intermediate layers by RF-MBE

2002 ◽  
Vol 237-239 ◽  
pp. 1017-1021 ◽  
Author(s):  
Y. Saito ◽  
T. Yamaguchi ◽  
H. Kanazawa ◽  
K. Kano ◽  
T. Araki ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Quality ◽  
Intermediate Layers

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
M. J. Jurkovic ◽  
L.K. Li ◽  
B. Turk ◽  
W. I. Wang ◽  
S. Syed ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
High Quality ◽  
Gas Source ◽  
Background Doping ◽  
Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

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