Continuous low-temperature spray drying approach for efficient production of high quality native rice starch

2021 ◽  
pp. 1-16
Author(s):  
Jamie Boon Jun Tay ◽  
Xinying Chua ◽  
Cailing Ang ◽  
Kelvin Kim Tha Goh ◽  
Gomathy Sandhya Subramanian ◽  
...  
Keyword(s):  
Low Temperature ◽  
Spray Drying ◽  
Rice Starch ◽  
Efficient Production ◽  
High Quality

AISI TYPE P20

Alloy Digest ◽  
1982 ◽  
Vol 31 (1) ◽  
Keyword(s):  
Low Temperature ◽  
Tool Steel ◽  
Die Casting ◽  
Heat Treating ◽  
High Quality ◽  
Medium Carbon ◽  
Casting Alloys ◽  
Steel Mills ◽  
Aisi Type ◽  
Quality Tool

Abstract AISI Type P20 is a chromium-molybdenum tool steel of medium carbon content. It usually is supplied in the prehardened condition (about 300 Brinell) so that the cavity can be machined and the mold or die placed directly in service; however, for some uses further treatments are employed. It is produced to high-quality tool-steel standards to permit a high luster to be achieved on the surface of the polished die cavity. P20 is used for molds for plastics and for die-casting dies for zinc and other low-temperature casting alloys. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on forming, heat treating, and machining. Filing Code: TS-393. Producer or source: Tool steel mills.

Growth of high-quality ITO thin films at low temperature by tuning the oxygen flow rate using the nano-cluster deposition (NCD) technique

2010 ◽  
Vol 490 (4-6) ◽  
pp. 234-237 ◽  
Author(s):  
S.V.N. Pammi ◽  
Anupama Chanda ◽  
Nak-Jin Seong ◽  
Soon-Gil Yoon
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
High Quality ◽  
Cluster Deposition ◽  
Ito Thin Films ◽  
Nano Cluster

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

Growth of high-quality InN using low-temperature intermediate layers by RF-MBE

2002 ◽  
Vol 237-239 ◽  
pp. 1017-1021 ◽  
Author(s):  
Y. Saito ◽  
T. Yamaguchi ◽  
H. Kanazawa ◽  
K. Kano ◽  
T. Araki ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Quality ◽  
Intermediate Layers

scholarly journals Efficient production of recombinant PP2A at a low temperature using a baculovirus expression system

2016 ◽  
Vol 11 ◽  
pp. 86-89 ◽  
Author(s):  
Tsuyoshi Ikehara ◽  
Shihoko Nakashima ◽  
Junichi Nakashima ◽  
Tsubasa Kinoshita ◽  
Takeshi Yasumoto
Keyword(s):  
Low Temperature ◽  
Expression System ◽  
Baculovirus Expression System ◽  
Efficient Production ◽  
Baculovirus Expression

scholarly journals Low-Temperature and High-Quality Growth of Bi2O2Se Layered Semiconductors via Cracking Metal–Organic Chemical Vapor Deposition

ACS Nano ◽  
2021 ◽  
Author(s):  
Minsoo Kang ◽  
Hyun-Jun Chai ◽  
Han Beom Jeong ◽  
Cheolmin Park ◽  
In-young Jung ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Layered Semiconductors ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Low Temperature Critical Growth of High Quality Nitrogen Doped Graphene on Dielectrics by Plasma-Enhanced Chemical Vapor Deposition

ACS Nano ◽  
2015 ◽  
Vol 9 (1) ◽  
pp. 164-171 ◽  
Author(s):  
Dacheng Wei ◽  
Lan Peng ◽  
Menglin Li ◽  
Hongying Mao ◽  
Tianchao Niu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Critical Growth ◽  
High Quality ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene

scholarly journals Towards Upscaling of La5.5WO11.25−δ Manufacture for Plasma Spraying-Thin Film Coated Hydrogen Permeable Membranes

Membranes ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 192
Author(s):  
Sonia Escolástico ◽  
Cecilia Solís ◽  
Antonio Comite ◽  
Fiorenza Azzurri ◽  
Malko Gindrat ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Spray Drying ◽  
Plasma Spraying ◽  
Hydrogen Permeation ◽  
High Quality ◽  
Separation Membranes ◽  
Operation Conditions ◽  
Thin Membranes ◽  
Ceramic Fuel Cells

Lanthanum tungstate (La6WO12) is a promising material for the development of hydrogen separation membranes, proton ceramic electrolyzer cells and protonic ceramic fuel cells due to its interesting transport properties and stability under different operation conditions. In order to improve the hydrogen transport through the La6WO12 membranes, thin membranes should be manufactured. This work is based on the industrial production of La5.5WO11.25−δ (LWO) powder by spray drying and the manufacturing of thin membranes by low-pressure plasma spraying (LPPS-TF) technique. LPPS-TF allows the production of dense thin films of high quality in an industrial scale. The powders produced by spray drying were morphological and electrochemically characterized. Hydrogen permeation fluxes of a membrane manufactured with these powders were evaluated and fluxes are similar to those reported previously for LWO powder produced in the lab scale. Finally, the transport properties of LWO thin films deposited on Al2O3 indicate that LPPS-TF produces high-quality LWO films with potential for integration in different applications.

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
M. J. Jurkovic ◽  
L.K. Li ◽  
B. Turk ◽  
W. I. Wang ◽  
S. Syed ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
High Quality ◽  
Gas Source ◽  
Background Doping ◽  
Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

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