1200 V / 200 A V-Groove Trench MOSFET Optimized for Low Power Loss and High Reliability

2020 ◽  
Vol 1004 ◽  
pp. 776-782
Author(s):  
Kosuke Uchida ◽  
Toru Hiyoshi ◽  
Yu Saito ◽  
Hiroshi Egusa ◽  
Tatsushi Kaneda ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Low Power ◽  
Power Loss ◽  
High Reliability ◽  
Short Circuit ◽  
Guard Ring ◽  
Optimized Design ◽  
Drain Bias ◽  
Bias Condition

1200 V / 200 A V-groove trench MOSFET optimized to achieve low power loss, high oxide reliability under a drain bias condition and high avalanche ruggedness is shown in this paper. We revealed a relationship between the lifetime under a high temperature reverse bias condition and the oxide electric field. In accordance with the results of the test, the 1200 V / 200 A trench MOSFET showed an improvement in the tradeoff between the on-resistance and oxide electric field with the presence of current spreading layers. In order to obtain low on-resistance and high avalanche ruggedness at the same time, buried guard ring structures, which made the blocking voltage of the edge termination area higher than that of the active area, was developed. The fabricated MOSFETs demonstrated a low specific on-resistance of 3.1 mΩ cm2. A predicted lifetime of 200 years under a high temperature drain bias condition of 1200 V was achieved by the optimized design. A short circuit withstand time of 6 μs and a high avalanche energy of 7.8 J/cm2 were shown.

The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

2016 ◽  
Vol 858 ◽  
pp. 840-843 ◽  
Author(s):  
Kosuke Uchida ◽  
Toru Hiyoshi ◽  
Taro Nishiguchi ◽  
Hirofumi Yamamoto ◽  
Shinji Matsukawa ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Epitaxial Layer ◽  
Threading Dislocations ◽  
Oxide Breakdown ◽  
Temperature Bias ◽  
Mixed Dislocation ◽  
Weibull Plot ◽  
Deep Pit ◽  
Drain Bias

The influence of surface pit shape on 4H-SiC double implanted MOSFETs (DMOSFETs) reliability under a high temperature drain bias test has been investigated. Threading dislocations formed two types of pit shapes (deep pit and shallow pit) on an epitaxial layer surface. The cause of the failure was revealed to be an oxide breakdown above the pit generated at the threading mixed dislocation in both pit shapes. Weibull distributions between two types of pits were different. Although the DMOSFETs on the epitaxial layer with the deep pit show longer lifetime than those with the shallow pit, the epitaxial layer with the shallow pit is suitable to estimate the lifetime of the DMOSFETs because of a linearity of the Weibull plot. The lifetime of the DMOSFETs with the shallow pit was dominated by an oxide electric field. The maximum oxide electric field required to obtain the lifetime of more than 10 years was estimated to be 2.7 MV/cm.

Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability

2018 ◽  
Vol 924 ◽  
pp. 457-460 ◽  
Author(s):  
Shunsuke Asaba ◽  
Tatsuo Schimizu ◽  
Yukio Nakabayashi ◽  
Shigeto Fukatsu ◽  
Toshihide Ito ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Field Effect ◽  
High Reliability ◽  
High Mobility ◽  
Gate Insulator ◽  
Field Effect Mobility ◽  
High Quality ◽  
Bias Temperature Instability ◽  
Nitrogen Annealing

The gate insulator process for SiC-MOSFET was examined and high-quality interface was realized by employing the pre-annealing process before high-temperature N2 annealing. The pre-annealing evidently activated the interface to introduce nitrogen, and then field-effect mobility exceeded 50 cm2/Vs. The fabricated sample also demonstrated superior bias temperature instability (BTI) and excellent breakdown electric field of 11.7 MV/cm.

Mn-Zn Ferrite TP4K Material with Low Power Loss at High Temperature

2013 ◽  
Vol 320 ◽  
pp. 119-122
Author(s):  
Bing Bing Xing ◽  
Min Nie ◽  
Qiang Zhang ◽  
Yin Chuan Li
Keyword(s):  
High Temperature ◽  
Magnetic Flux ◽  
Low Power ◽  
Flux Density ◽  
Power Loss ◽  
Room Temperature ◽  
Magnetic Flux Density ◽  
High Saturation ◽  
Zn Ferrite

The Mn-Zn ferrite TP4K material was prepared by traditional oxide method, which has high saturation magnetic flux density and low power loss at high temperature. The Bs of the TP4K material is 535mT at room temperature, 430mT at 100°C, 350mT at 140°C; At temperature T=140°C, the power loss is lower than 340 kW/m3, which was measured under the frequency f=100kHz, the magnetization B=200mT.

System-in-Packages with Low Power Loss for Future Voltage Regulators

2010 ◽  
Vol 130 (9) ◽  
pp. 1630-1635
Author(s):  
Takayuki Hashimoto ◽  
Tetsuya Kawashima ◽  
Masaki Shiraishi ◽  
Noboru Akiyama ◽  
Tomoaki Uno ◽  
...  
Keyword(s):  
Low Power ◽  
Power Loss ◽  
Voltage Regulators

BRUSHFORM 65

Alloy Digest ◽  
2013 ◽  
Vol 62 (6) ◽  
Keyword(s):  
Physical Properties ◽  
Tensile Properties ◽  
Contact Force ◽  
Temperature Rise ◽  
Power Loss ◽  
High Reliability ◽  
Superior Performance ◽  
Contact Interface ◽  
Resistive Heating ◽  
Computer Power

Abstract BrushForm 65 is designed for both superior performance and high reliability in appliance, automotive, and computer power applications. Alloy BF-65’s combination of properties limits power loss at the contact interface, controls temperature rise from resistive heating, and provides stable contact force at temperatures to 200 C (390 F). This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as fatigue. It also includes information on forming. Filing Code: Cu-821. Producer or source: Materion Brush Performance Alloys.

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 999-1002
Author(s):  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Kenji Fukuda
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Atomic Hydrogen ◽  
High Reliability ◽  
Hydrogen Atmosphere ◽  
Exposed Sample ◽  
New Apparatus ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Sic Wafer

Low-temperature post-oxidation annealing (POA) process of high-reliability thermal oxides grown on 4H-SiC using new apparatus that generates atomic hydrogen radicals by high-temperature catalyzer has been investigated. Atomic hydrogen radicals were generated by thermal decomposition of H2 gas at the catalyzer surface heated at high temperature of 1800°C, and then exposed to the sample at 500°C in reactor pressure of 20 Pa. The mode and maximum values of field-to-breakdown are 11.0 and 11.2 MV/cm, respectively, for the atomic hydrogen radical exposed sample. In addition, the charge-to-breakdown at 63% cumulative failure of the thermal oxides for atomic hydrogen radical exposed sample was 0.51 C/cm2, which was higher than that annealed at 800°C in hydrogen atmosphere (0.39 C/cm2). Consequently, the atomic hydrogen radical exposure at 500°C has remarkably improved the reliability of thermal oxides on 4H-SiC wafer, and is the same effect with high-temperature hydrogen POA at 800°C.

Transient operating regimes modeling in low-power boilers of a high-temperature fluidized bed

2020 ◽  
Vol 919 ◽  
pp. 052042
Author(s):  
A V Bondarev ◽  
S V Sarkisov ◽  
V N Tarasov ◽  
V A Vakunenko ◽  
N A Biryukov
Keyword(s):  
High Temperature ◽  
Low Power ◽  
Fluidized Bed ◽  
Operating Regimes

scholarly journals Development of a Cryogen-Free Compact 3 T Superconducting Magnet for an Electromagnetic Property Measurement System

2021 ◽  
Vol 11 (7) ◽  
pp. 3074
Author(s):  
Jae Young Jang ◽  
Myung Su Kim ◽  
Young Jin Hwang ◽  
Seunghyun Song ◽  
Yojong Choi ◽  
...  
Keyword(s):  
High Temperature ◽  
Measurement System ◽  
Electromagnetic Property ◽  
Superconducting Magnet ◽  
Optimized Design ◽  
Magnet System ◽  
Superconducting Tape ◽  
High Temperature Superconducting ◽  
Target Field ◽  
Property Measurement

A cryogen-free portable 3 T high-temperature superconducting magnet for an electromagnetic property measurement system has been developed to serve as a user facility at the Korea Basic Science Institute. The metallic insulation method was adopted to reduce the charging delay without sacrificing the self-protecting feature. A genetic-algorithm-aided optimized design was carried out to minimize the superconducting tape consumption while satisfying several design constraints. After the design, the compact high-temperature superconducting magnet composed of eight double-pancake coil modules was wound with high-temperature superconducting tape and stainless steel tape, and integrated with a two-stage cryo-cooler. The 3 T magnet was successfully cooled to approximately 20 K with a cryo-cooler and reached the target field of 3 T without any problems. Long-term measurements and a range of other tests were also implemented to verity the performance of the magnet. Test results demonstrated the feasibility of a cryogen-free portable high-temperature superconducting magnet system for electromagnetic property measurement experiments.

Low Power Loss IGBT Driver Circuit Using Current Drive

2020 ◽  
Author(s):  
Yudai Abe ◽  
Akio Iwabuchi ◽  
Jun-Ichi Matsuda ◽  
Anna Kuwana ◽  
Takashi Ida ◽  
...  
Keyword(s):  
Low Power ◽  
Power Loss ◽  
Current Drive ◽  
Driver Circuit
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