Clustering Process of Point Defects in GaP Studied by Transmission Electron Microscopy

1995 ◽  
Vol 196-201 ◽  
pp. 1279-1284
Author(s):  
Y. Ohno ◽  
S. Takeda ◽  
Masako Hirata
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Point Defects ◽  
Transmission Electron

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

The Study on Surface Chemistry of Nanoporous Black Si Layers

2011 ◽  
Vol 79 ◽  
pp. 304-308
Author(s):  
Wang Li
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Chemistry ◽  
Point Defects ◽  
High Density ◽  
Nanometer Scale ◽  
Transmission Electron ◽  
One Step ◽  
Amorphous Si ◽  
Microscopy Techniques

We reported our detailed investigation of the microstructure and surface chemistry of nanoporous black Si layers using transmission electron microscopy techniques such as HRTEM, EDS, and EELS. We found that a one-step nanoparticle-catalyzed liquid etch creates deep conical nanovoids. The cones provide the density-graded surface that suppresses reflection. The surface of the as-etched nanoporous black Si is an amorphous Si suboxide (SiOx) produced by the strongly oxidizing nanocatalyzed etch. The c-Si/suboxide interface is rough at the nanometer scale and contains a high density of point defects.

Point Defect Detector Studies of Ge+ Implanted Silicon upon Oxidation

1992 ◽  
Vol 262 ◽  
Author(s):  
H. L. Meng ◽  
S. Prusstn ◽  
K. S. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Point Defect ◽  
Point Defects ◽  
Type Ii ◽  
Dislocation Loops ◽  
Furnace Annealing ◽  
Plan View ◽  
Atom Concentration ◽  
Transmission Electron

ABSTRACTPrevious results [1] have shown that type II (end-of-range) dislocation loops can be used as point defect detectors and are efficient in measuring oxidation induced point defects. This study investigates the interaction between oxidation-induced point defects and dislocation loops when Ge+ implantation was used to form the type II dislocation loops. The type II dislocation loops were introduced via Ge+ implants into <100> Si wafers at 100 keV to at doses ranging from 2×1015 to l×1016/cm2. The subsequent furnace annealing at 900 °C was done for times between 30 min and 4 hr in either a dry oxygen or nitrogen ambient. The change in atom concentration bound by dislocation loops as a result of oxidation was measured by plan-view transmission electron microscopy (PTEM). The results show that the oxidation rate for Ge implanted Si is similar to Si+ implanted Si. Upon oxidation a decrease in the interstitial injection was observed for the Ge implanted samples relative to the Si implanted samples. With increasing Ge+ dose the trapped atom concentration bound by the loops actually decreases upon oxidation relative to the inert ambient implying oxidation of Ge+ implanted silicon can result in either vacancy injection or the formation of an interstitial sink.

scholarly journals Point defects in turbostratic stacked bilayer graphene

Nanoscale ◽  
2017 ◽  
Vol 9 (36) ◽  
pp. 13725-13730 ◽  
Author(s):  
Chuncheng Gong ◽  
Sungwoo Lee ◽  
Suklyun Hong ◽  
Euijoon Yoon ◽  
Gun-Do Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Point Defects ◽  
Density Functional ◽  
Tight Binding ◽  
Bilayer Graphene ◽  
Dynamics Simulation ◽  
Functional Theory ◽  
Transmission Electron ◽  
Aberration Corrected

The point defects in turbostratic bilayer graphene are characterized using aberration-corrected transmission electron microscopy, density functional theory, and tight-binding molecular dynamics simulation.

Formation of Defect Clusters in SrTiO3 Crystals Implanted with Xenon Ions

2007 ◽  
Vol 561-565 ◽  
pp. 1757-1760 ◽  
Author(s):  
Ming Hui Song ◽  
Xing Jian Guo ◽  
Nobuhiro Ishikawa ◽  
Masaki Takeguchi ◽  
Kazutaka Mitsuishi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Point Defects ◽  
Crystalline State ◽  
Implantation Dose ◽  
Defect Clusters ◽  
Other Point Defects ◽  
Transmission Electron ◽  
Post Implantation

SrTiO3 crystals were implanted with 100 keV xenon (Xe+) ions at 673 or 1073 K up to 2.0 × 1020 ions m−2. Defect clusters formed in the ion-implanted samples were investigated with conventional and high-resolution transmission electron microscopy. Nanometer-sized clusters were formed in the samples. The clusters grew large in size after post-implantation annealing and with increasing the implantation dose. The clusters were faceted with {100}, or {110} of SrTiO3. Though the nano-sized clusters were expected to contain Xe atoms, they were not in crystalline state. The results suggest that even if the clusters contain Xe atoms, they also contain other point defects such as vacancies.

Amorphization Mechanism of Si/Ge Superlattices Upon Ion Implantation

1998 ◽  
Vol 540 ◽  
Author(s):  
N.A. Sobolev ◽  
U. Kaiser ◽  
I.I. Khodos ◽  
H. Presting ◽  
U. König
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Point Defects ◽  
Dose Range ◽  
Cross Sectional ◽  
Layer Interaction ◽  
Transmission Electron ◽  
The Cross ◽  
Electron Microdiffraction

AbstractThe damage production in the Si9Ge6 superlattices (SLs) upon implantation of 150 keV Ar+ ions at 300 K was studied my means of the cross-sectional transmission electron microscopy (XTEM) and electron microdiffraction. It was found that the amorphization occurs in a narrow dose range of (1 – 2) × 1014 cm-2 via accumulation of point defects. The conclusion drawn earlier (Mater. Sci. Forum 248-249, 289 (1997)) on the coherent amorphization of the Si and Ge layers in the SLs was confirmed. Possible mechanisms of the layer interaction leading to the observed behavior are discussed.

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