Effects of Deformation on Surface Modification by Nitrogen Ion-Implantation

2004 ◽  
Vol 449-452 ◽  
pp. 341-344
Author(s):  
Atsushi Yamamoto ◽  
Harushige Tsubakino ◽  
Masami Ando ◽  
Lie Liu ◽  
Mititaka Terasawa ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Fine Particles ◽  
Annealed Specimen ◽  
Iron Nitride ◽  
Nucleation Sites ◽  
Large Particles ◽  
Purity Iron ◽  
High Purity Iron ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Ion-implantation on high purity iron substrates with nitrogen ions were carried out by using a Cockcroft Walton type accelerator under an accelerating voltage of 150 kV. Hardness measurements on the implanted surfaces showed that hardness effectively increased in the cold rolled specimens by ion-implantation in comparison with in an annealed specimen. Iron nitride, Fe16N2, was formed in the ion-implanted specimens. In the annealed specimen, relatively large particles of Fe16N2 were formed with low number density, while in the deformed specimens, dislocation substructures due to cold rolling were disappeared by ion-implantation and fine particles were densely formed. Strain field around dislocations induced by deformation provides nucleation sites for Fe16N2 particles.

X-Ray Diffraction Study of Phase Formation and Growth in Nitrogen Implanted Iron: Temperature Effects

1987 ◽  
Vol 93 ◽  
Author(s):  
R. J. Arnott ◽  
F. C. Burns ◽  
L. G. Carreiro ◽  
D. R. Chiphan ◽  
W. J. Croft ◽  
...  
Keyword(s):  
High Purity ◽  
Temperature Effects ◽  
Iron Nitride ◽  
Target Temperature ◽  
Optimum Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Purity Iron ◽  
High Purity Iron ◽  
Nitrogen Ion

ABSTRACTWe report preliminary results from an ongoing study of iron nitride grains formed in high purity iron under nitrogen ion bombardment. Under various implantation conditions, different iron nitride phases grow large enough to produce sharp x-ray diffraction lines. We have used these lines to examine the influence of target temperature during implantation. Between 200°C and 400°C increasing target temperature, which enhances dopant mobility, reduces the retained dose of nitrogen and restricts the formation of nitride phases. Over this temperature range, however, increasing vacancy mobility favors the growth of nitride grains and x-ray line breadth data suggests an optimum temperature for growth of Fe4N grains.

The Effect of Ion Implantation on Field Emission Property of Nanodiamond Films

2008 ◽  
Vol 8 (8) ◽  
pp. 4141-4145 ◽  
Author(s):  
Huang-Chin Chen ◽  
Umesh Palnitkar ◽  
Huan Niu ◽  
Hsiu-Fung Cheng ◽  
I-Nan Lin
Keyword(s):  
Ion Implantation ◽  
Field Emission ◽  
Structural Damage ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Emission Measurement ◽  
Before And After ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Nanocrystalline diamond films prepared by microwave plasma enhanced chemical vapor deposition (MPECVD) were implanted using 110 keV nitrogen ions under fluence ranging from 1013–1014 ions/cm2. Scanning Electron Microscopy (SEM) and Raman spectroscopy were used to analyze the changes in the surface of the films before and after ion implantation. Results show that with nitrogen ion implantation in nanocrystalline diamond film cause to decrease in diamond crystallinity. The field emission measurement shows a sharp increase in current density with increase in dose. The ion implantation also alters the turn on field. It is observed that the structural damage caused by ion implantation plays a significant role in emission behaviour of nanocrystalline diamonds.

scholarly journals Influence of nitrogen ion implantation on the electrophysical properties of the gate dielectric of power MOSFETs

2020 ◽  
pp. 55-64
Author(s):  
Vladimir B. Odzaev ◽  
Anatoli K. Panfilenka ◽  
Aliaksandr N. Pyatlitski ◽  
Uladislau S. Prasalovich ◽  
Natalya S. Kovalchuk ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Gate Dielectric ◽  
Dose Range ◽  
Maximum Effect ◽  
Additional Doping ◽  
Opposite Sequence ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Oxide Removal ◽  
Dielectric Charge

Power MOS-transistors with vertical structure are investigated. Additionally, in some devices, ion implantation of nitrogen with energies of 20 and 40 keV was carried out in a dose range of 1 ⋅1013–5 ⋅ 1014 cm –2 through a sacrificial oxide 20 nm thick. For one group of wafers, rapid thermal annealing was first carried out, then oxide removal (forward order), for the other group – in the opposite sequence (reverse order). It was found that with the additional doping of nitrogen ions in doses of 1⋅1013–5 ⋅ 1013 cm –2 with energy of 20 keV, an increasing of gate dielectric charge to breakdown for both types of annealing is observed. The maximum effect occurred for the samples at a dose of nitrogen ions of 1⋅1013 cm –2 with the forward heat treatment order. This is due to the interaction of nitrogen atoms with dangling bonds of the Si – SiO2 interface during annealing, as a result of which strong chemical bonds are formed that prevent charge accumulation on the surface of the Si – SiO2 interface. It is assumed that the main contribution to the gate leakage current is made by the tunneling of charge carriers through traps.

scholarly journals Effect of Nitrogen Ion Implantation Energy on the Mechanical and Chemical Properties of AISI M50 Steel

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Xiangyu Xie ◽  
Chao Chen ◽  
Jun Luo ◽  
Jin Xu
Keyword(s):  
Ion Implantation ◽  
Chemical Properties ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Implantation Energy ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
And Chemical Properties ◽  
M50 Steel

Nitrogen ion implantation has shown its role in enhancing steel surface properties. In this work, AISI M50 steel was implanted with nitrogen ions by using the metal vapor vacuum arc technique with a dose of 2 × 1017 cm−2, and corresponding implanted energies were at 60 keV, 80 keV, and 100 keV, respectively. The distribution of implanted nitrogen ions was calculated, and the samples were tribologically tested and examined. As shown by the results, the microhardness in implanted samples was 1.17 times greater relative to that of the unimplanted sample. The implantation of the nitrogen ion leads to a change in the friction coefficient of the AISI M50 steel. Adhesive wear mechanism occurs in the unimplanted sample, and adhesion resistance tends to increase when nitrogen-implanted energy increases. The formation of oxides α-Fe2O3 and Fe3O4 further enhanced the tribological properties for implanted samples.

The effect of nitrogen ion implantation on nano-scale hardness and elastic modulus of WC-Co indexable knives for wood materials machining

2019 ◽  
Vol 108 ◽  
pp. 79-83
Author(s):  
JACEK WILKOWSKI ◽  
MAREK BARLAK ◽  
ROMAN BÖTTGER ◽  
ZBIGNIEW WERNER
Keyword(s):  
Surface Layer ◽  
Elastic Modulus ◽  
Ion Implantation ◽  
Process Parameters ◽  
Nitrogen Ion Implantation ◽  
Hardness Tester ◽  
Nano Scale ◽  
Nitrogen Ions ◽  
Implantation Process ◽  
Nitrogen Ion

The effect of nitrogen ion implantation on nano-scale hardness and elastic modulus of WC-Co indexable knives for wood materials machining. The paper presents the results of a study investigating the effects of nitrogen ion implantation into the surface layer of WC-Co blades, used for machining wood materials, on their hardness and modulus of elasticity at the nano-scale. The modified blades were analyzed in six variants of implantation process parameters, and compared with control blades (virgin, unmodified). Three energies of accelerating nitrogen ions were used in the implantation process (5, 50 and 500 keV) and two doses of implanted ions (1e17 and 5e17 cm-2). The nano-hardness and elastic modulus of all blades were measured using an Anton Paar TriTec (UNHT) hardness tester.

Iron nitride phases formed by nitrogen ion implantation and thermal treatment

1983 ◽  
Vol 80 (2) ◽  
pp. 471-482 ◽  
Author(s):  
B. Rauschenbach ◽  
A. Kolitsch ◽  
K. Hohmuth
Keyword(s):  
Thermal Treatment ◽  
Ion Implantation ◽  
Iron Nitride ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

scholarly journals The Effect of Nitrogen Ion Implantation on the Surface Properties of Ti6Al4V Alloy Coated by a Carbon Nanolayer

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Petr Vlcak ◽  
Frantisek Cerny ◽  
Zdenek Weiss ◽  
Stanislav Danis ◽  
Josef Sepitka ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Coefficient Of Friction ◽  
Ion Beam ◽  
Carbon Film ◽  
Optical Emission ◽  
X Ray Diffraction ◽  
Measured Concentration ◽  
The Coefficient Of Friction ◽  
Nitrogen Ions ◽  
Nitrogen Ion

The ion beam assisted deposition (IBAD) method was chosen for preparing a carbon thin film with a mixing area on a substrate of Ti6Al4V titanium alloy. Nitrogen ions with energy 90 keV were used. These form a broad ion beam mixing area at the interface between the carbon film and the substrate. We investigated the chemical composition by the glow discharge optical emission spectroscopy (GD-OES) method and the phases by the X-ray diffraction (XRD) method. The measured concentration profiles indicate the mixing of the carbon film into the substrate, which may have an effect on increasing the adhesion of the deposited film. The nanohardness and the coefficient of friction were measured. We found that the modified samples had a markedly lower coefficient of friction even after damage to the carbon film, and they also had higher nanohardness than the unmodified samples. The increased nanohardness is attributed to the newly created phases that arose with ion implantation of nitrogen ions.

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