MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization

2005 ◽  
Vol 475-479 ◽  
pp. 3377-3380 ◽  
Author(s):  
Hyoun Woo Kim ◽  
Nam Ho Kim
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Film ◽  
Mocvd Growth ◽  
Afm Analysis ◽  
Metalorganic Chemical

We have demonstrated the production of gallium oxide thin films on various substrates such as Si(111), SiO2, and sapphire by metalorganic chemical vapor deposition using the trimethylgallium (TMGa) as a precursor in the presence of oxygen. The XRD data revealed that the as-deposited gallium oxide films were fully amorphous but very small crystallites with monoclinic structures were found with the thermal annealing at a sufficiently high temperature, regardless of substrate materials. The AFM analysis indicated that the surface roughness increased by the thermal annealing.

Plasma-Assisted MOCVD Growth of ZnO Thin Films

2005 ◽  
Vol 892 ◽  
Author(s):  
Maria Losurdo ◽  
Maria Michela Giangregorio ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Graziella Malandrino ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Zno Thin Films ◽  
Zno Films ◽  
Mocvd Growth ◽  
Metalorganic Chemical

AbstractZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) also plasma assisted (PA-MOCVD) on c-axis oriented sapphire (0001) and Si(001) substrates using the alternative Zn(TTA)2·tmed (HTTA=2-thenoyltrifluoroacetone,TMED=N,N,N’,N’-tetramethylethylendiamine) precursor. The structural, morphological and optical properties of ZnO films have been investigated. The results show that the O2 plasma assisted growth results in an improvement of the structure, in smoother morphologies and in a better optical quality with a sharp and intense exciton of ZnO films.

MOCVD Growth Of GaxIn1−xAs1−ySby and GaxIn1−xSb ALLOYS: Effect of Growth Parameters on Their Solid Compositions

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
Shuwei Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Growth Kinetic ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Mocvd Growth ◽  
Growth Temperature Dependence ◽  
Metalorganic Chemical

ABSTRACTQuaternary GaxIn1−xAs1−ySby and ternary GaxIn1−xSb alloys have been grown by metalorganic chemical vapor deposition (MOCVD). The effects of growth parameters on the solid compositions, x, y for GaxIn1−xAs1−ySby and x for GaxIn1−x Sb alloys are described in detail. Concentrations of the reactants have major effects on the corresponding solid compositions in the two kinds of alloys. The growth temperature dependence of the solid compositions in both GaxIn1−xAs1−ySby and GaxIn1−xSb was obviously observed and the growth kinetic factor was considered to account for this dependence. It was found that III/V ratio in vapor has a great effect on x in GaxIn1−xSb alloy but little effect on x and y in GaxIn1−xAs1−ySby alloy.

Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 34 (Part 1, No. 12A) ◽  
pp. 6321-6325 ◽  
Author(s):  
Chien-Jen Wang ◽  
Ming-Shiann Feng ◽  
ShihHsiungChan ◽  
Janne-Wha Wu ◽  
Chun-Yen Chang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical
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