The Texture Effect on Diffusion Barrier Property on TiN Films between Copper and Si Wafer

2005 ◽  
Vol 495-497 ◽  
pp. 1371-1376
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
No Jin Park ◽  
Bee Lyong Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Thin Films ◽  
Metal Organic ◽  
Better Than

TiN thin films are widely used as a coating material due to their good mechanical and conductivity properties, high thermal properties, strong erosion and corrosion resistance. Also TiN has been used in Si devices as a diffusion barrier material for Al and Cu-based metallization. The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layer. In this study, the relationship between the texture and microstructure and the best diffusion barrier propertiy of TiN coated films (by PVD and MOCVD) on semiconductor devices (Cu/TiN/SiO2/Si layer) were investigated under different processing conditions and textures. The property of diffusion barrier for Cu of physical vapor deposited TiN thin films is better than that of metal organic chemical vapor deposited TiN thin films. Also the property of diffusion barrier for Cu of (111) textured TiN thin films is better than that of (200) textured TiN thin films.

The Texture and Property of Diffusion Barrier of TiN Thin Films

2005 ◽  
Vol 475-479 ◽  
pp. 1865-1868 ◽  
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
Bee Lyong Yang ◽  
Jun Mo Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Thin Films ◽  
Metal Organic ◽  
Better Than

The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layers. In this study, the relationships between the textures and microstructures and the properties of TiN films on semiconductor were investigated under different processing methods (PVD and MOCVD). The property of diffusion barrier of RF sputtered (PVD) TiN is better than that of metal organic chemical vapor deposited (MOCVD) TiN thin films. Also the property of diffusion barrier of PVD (111) textured TiN is better than that of PVD (100) textured TiN thin films on oxidized Si wafer.

Deposition and Characterization of High Dielectric Thin Films for Memory Device Application

2003 ◽  
Vol 10 (04) ◽  
pp. 591-604 ◽  
Author(s):  
Hyeong Joon Kim ◽  
Ju Cheol Shin ◽  
Cheol Seong Hwang ◽  
Sang Yong No
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Memory Device ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Bst Thin Films ◽  
Metal Organic ◽  
Sputter Deposited ◽  
High Dielectric

(Pb,La)TiO 3 (PLT) and Pb(Zr,Ti)O 3 (PZT) thin films were deposited on Pt/SiO2/Si substrate by metal-organic chemical vapor deposition (MOCVD) using a solid delivery system. The domain configurations of the deposited PLT thin films were investigated, and the film with a columnar structure exhibited a very stable write/read operation for the domain memory application. Electrical properties of PLT, PZT and rf-sputter-deposited (Ba,Sr)TiO 3 (BST) thin films were measured, and their conduction mechanisms were analyzed. The composition and thickness uniformity of BST thin films deposited by the low temperature MOCVD method on a patterned wafer with 0.15 μm-diameter contact holes were investigated, and complete thickness and composition uniformity were obtained especially for the case of a dome-wall-type chamber with a wall temperature of 450°C.

Properties of Tin Oxide Films Prepared by MOCVD

2004 ◽  
Vol 449-452 ◽  
pp. 997-1000 ◽  
Author(s):  
Gwang Pyo Choi ◽  
Yong Joo Park ◽  
Whyo Sup Noh ◽  
Jin Seong Park
Keyword(s):  
Thin Films ◽  
Oxygen Content ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Tin Oxide Films ◽  
N2 Annealing

Tin oxide thin films were deposited at 375 °C on α-alumina substrate by metal-organic chemical vapor deposition (MOCVD) process. A number of hillocks on the film were formed after air annealing at 500 °C for 30 min and few things in N2 annealing. The oxygen content and the binding energy after air annealing came to close the stoichiometric SnO2. The cauliflower hillocks of the film seem to be formed by the continuous migration of crystallites from a cauliflower grain on the substrate to release the stress due to the increase of oxygen content and volume.

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