Preparation and Properties of High Density, Hydrogen Free Hard Carbon Films with Direct Ion Beam or Arc Discharge Deposition

1991 ◽  
Vol 52-53 ◽  
pp. 197-216 ◽  
Author(s):  
J.-P. Hirvonen ◽  
J. Koskinen ◽  
R. Lappalainen ◽  
A. Anttila
Keyword(s):  
Arc Discharge ◽  
Ion Beam ◽  
Carbon Films ◽  
High Density ◽  
Hard Carbon

scholarly journals Characterization and Performance of Carbon Films Deposited by Plasma and Ion Beam Based Techniques

1994 ◽  
Vol 354 ◽  
Author(s):  
K.C. Walter ◽  
H. Kung ◽  
T. Levine ◽  
J.T. Tesmer ◽  
P. Kodali ◽  
...  
Keyword(s):  
Wear Rate ◽  
Surface Area ◽  
Ion Beam ◽  
Carbon Films ◽  
The Self ◽  
Line Of Sight ◽  
Rf Power ◽  
Hard Carbon ◽  
Self Bias ◽  
Cathodic Arc

AbstractPlasma and ion beam based techniques have been used to deposit carbon-based films. The ion beam based method, a cathodic arc process, used a magnetically mass analyzed beam and is inherently a line-of-sight process. Two hydrocarbon plasma-based, non-line-of-sight techniques were also used and have the advantage of being capable of coating complicated geometries. The self-bias technique can produce hard carbon films, but is dependent on rf power and the surface area of the target. The pulsed-bias technique can also produce hard carbon films but has the additional advantage of being independent of rf power and target surface area. Tribological results indicated the coefficient of friction is nearly the same for carbon films from each deposition process, but the wear rate of the cathodic arc film was five times less than for the self-bias or pulsed-bias films. Although the cathodic arc film was the hardest, contained the highest fraction of sp3 bonds and exhibited the lowest wear rate, the cathodic arc film also produced the highest wear on the 440C stainless steel counterface during tribological testing. Thus, for tribological applications requiring low wear rates for both counterfaces, coating one surface with a very hard, wear resistant film may detrimentally affect the tribological behavior of the counterface.

Tribological characterisation of hard carbon films produced by the pulsed vacuum arc discharge method

1992 ◽  
Vol 1 (5-6) ◽  
pp. 639-643 ◽  
Author(s):  
H. Ronkainen ◽  
J. Koskinen ◽  
A. Anttila ◽  
K. Holmberg ◽  
J.-P. Hirvonen
Keyword(s):  
Arc Discharge ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Hard Carbon ◽  
Discharge Method

Preparation and characterization of thin films of carbon nitride

1995 ◽  
Vol 53 ◽  
pp. 104-105
Author(s):  
L. Wan ◽  
R. F. Egerton
Keyword(s):  
Carbon Nitride ◽  
Arc Discharge ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Reactive Sputtering ◽  
Vacuum Arc ◽  
Specimen Preparation ◽  
Bonding Structure ◽  
Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

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