scholarly journals Characterization and Performance of Carbon Films Deposited by Plasma and Ion Beam Based Techniques

1994 ◽  
Vol 354 ◽  
Author(s):  
K.C. Walter ◽  
H. Kung ◽  
T. Levine ◽  
J.T. Tesmer ◽  
P. Kodali ◽  
...  
Keyword(s):  
Wear Rate ◽  
Surface Area ◽  
Ion Beam ◽  
Carbon Films ◽  
The Self ◽  
Line Of Sight ◽  
Rf Power ◽  
Hard Carbon ◽  
Self Bias ◽  
Cathodic Arc

AbstractPlasma and ion beam based techniques have been used to deposit carbon-based films. The ion beam based method, a cathodic arc process, used a magnetically mass analyzed beam and is inherently a line-of-sight process. Two hydrocarbon plasma-based, non-line-of-sight techniques were also used and have the advantage of being capable of coating complicated geometries. The self-bias technique can produce hard carbon films, but is dependent on rf power and the surface area of the target. The pulsed-bias technique can also produce hard carbon films but has the additional advantage of being independent of rf power and target surface area. Tribological results indicated the coefficient of friction is nearly the same for carbon films from each deposition process, but the wear rate of the cathodic arc film was five times less than for the self-bias or pulsed-bias films. Although the cathodic arc film was the hardest, contained the highest fraction of sp3 bonds and exhibited the lowest wear rate, the cathodic arc film also produced the highest wear on the 440C stainless steel counterface during tribological testing. Thus, for tribological applications requiring low wear rates for both counterfaces, coating one surface with a very hard, wear resistant film may detrimentally affect the tribological behavior of the counterface.

Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

Structural Characteristics of Diamond-Like Carbon Films Synthesized by Different Methods

2017 ◽  
Vol 743 ◽  
pp. 112-117
Author(s):  
Alexander Zolkin ◽  
Anna Semerikova ◽  
Sergey Chepkasov ◽  
Maksim Khomyakov
Keyword(s):  
Amorphous Phase ◽  
Ion Beam ◽  
High Energy ◽  
Carbon Films ◽  
Ion Source ◽  
Ordered Structure ◽  
Deposition Technique ◽  
Cathodic Arc Deposition ◽  
Cathodic Arc ◽  
Arc Deposition

In the present study, the Raman spectra of diamond-like amorphous (a-C) and hydrogenated amorphous (a-C:H) carbon films on silicon obtained using the ion-beam methods and the pulse cathodic arc deposition technique were investigated with the aim of elucidating the relation between the hardness and structure of the films. The hardness of the samples used in the present study was 19 – 45 GPa. Hydrogenated carbon films were synthesized using END–Hall ion sources and a linear anode layer ion source (LIS) on single-crystal silicon substrates. The gas precursors were CH4 and C3H8, and the rate of the gas flow fed into the ion source was 4.4 to 10 sccm. The ion energies ranged from 150 to 600 eV. a-C films were deposited onto Si substrates using the pulse cathodic arc deposition technique. The films obtained by the pulse arc technique contained elements with an ordered structure. In the films synthesized using low- (150 eV) and high-energy (600 eV) ions beams, an amorphous phase was the major phase. The significant blurriness of the diffraction rings in the electron diffraction patterns due to a large film thickness (180 – 250 nm) did not allow distinctly observing the signals from the elements with an ordered structure against the background of an amorphous phase.

Comparison of Energetic Carbon Deposition Processes for Use As Ultra-Thin Disk Overcoats

2001 ◽  
Author(s):  
Richard L. White ◽  
Bing K. Yen ◽  
Jan-Ulrich Thiele ◽  
Hans-Herman Schneider ◽  
James H. Rogers ◽  
...  
Keyword(s):  
Carbon Deposition ◽  
Ion Beam ◽  
Scratch Resistance ◽  
Carbon Films ◽  
Maximum Hardness ◽  
Scratch Testing ◽  
Deposition Processes ◽  
Cathodic Arc ◽  
Nitrogen Additions ◽  
Deposition Conditions

Abstract Three different processes, Plasma Enhanced CVD (PECVD), Ion Beam (IB), and Cathodic Arc (CA) have been used to deposit highly energetic carbon films in the 2–10 nm thickness range in commercial, high throughput disk manufacturing tools. The deposition conditions used are typical of those required for disk manufacturing. Raman spectroscopy, I-V measurements, nanoindentation, and AFM based scratch testing have been used to characterize the structural, electrical, and mechanical properties of the films. The measured maximum hardness for the PECVD and IBD films are 28 and 25 GPa, respectively, and found to be influenced by the hardness of the softer substrates for the 70–120nm films available for measurement. The scratch resistance of the CAC films is ∼2× the scratch resistance of the IBD films and 25% greater than the PECVD films. Addition of nitrogen to the films produced by both the PECVD and IB techniques reduces the hardness of the films. Both the Raman and I-V data suggest increasing concentrations of sp2 bonding result from these nitrogen additions.

Fluorine Incorporation Into Hard Amorphous Hydrogenated Carbon Films Deposited by PECVD

1999 ◽  
Vol 593 ◽  
Author(s):  
F. L. Freire ◽  
L. G. Jacobsohn ◽  
D. F. Franceschini
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Film Deposition ◽  
Density Reduction ◽  
Self Bias ◽  
Amorphous Network ◽  
Vapor Deposition Technique ◽  
Ir Transmission ◽  
Amorphous Hydrogenated Carbon

ABSTRACTThe incorporation of fluorine into amorphous hydrogenated carbon films deposited by the plasma enhanced chemical vapor deposition technique (PECVD) was investigated. Different mixtures of CH4 and CF4 were employed as the plasma atmosphere, with the partial pressure of CF4 ranging from 0 to 100 %. For all depositions, the self-bias was kept at –350 V. In the case of atmospheres richer than ∼80 % of CF4, no film deposition but substrate erosion was observed. The composition of the films was determined by Ion Beam Analysis (IBA), revealing that fluorine is incorporated into the amorphous network by replacing hydrogen. Infrared (IR) transmission measurements confirmed these results. It was also found that the incorporation of fluorine has the effect of reducing both the internal stress and hardness due to atomic density reduction.

scholarly journals Thermal stability of amorphous hard carbon films produced by cathodic arc deposition

1997 ◽  
Vol 71 (23) ◽  
pp. 3367-3369 ◽  
Author(s):  
Simone Anders ◽  
Javier Dı́az ◽  
Joel W. Ager ◽  
Roger Yu Lo ◽  
David B. Bogy
Keyword(s):  
Thermal Stability ◽  
Carbon Films ◽  
Hard Carbon ◽  
Cathodic Arc Deposition ◽  
Cathodic Arc ◽  
Arc Deposition ◽  
Thermal Stability Of

Substrate Effect on the Diamond-Like Carbon Films Synthesized by RF Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 3574-3579 ◽  
Author(s):  
S.S. Tzeng ◽  
Wei Min Wu ◽  
J.S. Hsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
The Self ◽  
Rf Plasma ◽  
Diamond Like Carbon ◽  
Working Pressure ◽  
Glass Substrates ◽  
Self Bias

Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition using methane as carbon source. Effect of substrate on the growth of DLC films was investigated by using four different substrate materials, silicon wafer (100), glass, flat-polished and mirror-polished alumina. The carbon films were deposited at four different self-bias voltages (-157 V, -403 V, -500 V and -590 V) by changing the plasma power under fixed flow rate and working pressure. Raman analyses indicated that DLC films were deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, and polymer-like carbon films were obtained at -157 V. For the alumina substrates, different Raman results were observed for flat-polished and mirror-polished alumina substrates. The hardness of DLC films, deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, was within 16~20 GPa using nanoindentation technique.

scholarly journals Mechanical Properties of Amorphous Hard Carbon Films Prepared by Cathodic ARC Deposition

1995 ◽  
Vol 383 ◽  
Author(s):  
Simone Anders ◽  
André Anders ◽  
Joel W. Ager ◽  
Zhi Wang ◽  
George M. Pharr ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Deposition Process ◽  
Carbon Films ◽  
Carbon Ions ◽  
Hard Carbon ◽  
Cathodic Arc Deposition ◽  
Transmission Electron ◽  
As Stress ◽  
Cathodic Arc ◽  
Arc Deposition

ABSTRACTCathodic arc deposition combined with macroparticle filtering of the plasma is an efficient and versatile method for the deposition of amorphous hard carbon films of high quality. The film properties can be tailored over a broad range by varying the energy of the carbon ions incident upon the substrate and upon the growing film by applying a pulsed bias technique. By varying the bias voltage during the deposition process specific properties of the interface, bulk film and top surface layer can be obtained. We report on nanoindentation and transmission electron microscopy studies as well as stress measurements of cathodic-arc amorphous hard carbon films deposited with varied bias voltage. The investigations were performed on multilayers consisting of alternating hard and soft amorphous carbon.

scholarly journals Heat treatment of cathodic arc deposited amorphous hard carbon films

1997 ◽  
Vol 308-309 ◽  
pp. 186-190 ◽  
Author(s):  
Simone Anders ◽  
Joel W Ager III ◽  
George M Pharr ◽  
Ting Y Tsui ◽  
I G. Brown
Keyword(s):  
Heat Treatment ◽  
Carbon Films ◽  
Hard Carbon ◽  
Cathodic Arc

Ion flux's pressure dependence in an asymmetric capacitively coupled rf discharge in NF3

Open Physics ◽  
2004 ◽  
Vol 2 (1) ◽  
pp. 1-11 ◽  
Author(s):  
Emil Mateev ◽  
Ivan Zhelyazkov
Keyword(s):  
Bias Voltage ◽  
Essential Feature ◽  
Gas Pressure ◽  
Ion Flux ◽  
The Self ◽  
Rf Discharge ◽  
Rf Power ◽  
Capacitively Coupled ◽  
Self Bias ◽  
Basic Equations

AbstractStarting from an analytical macroscopic/phenomenological model yielding the self-bias voltage as a function of the absorbed radio-frequency (rf) power of an asymmetric capacitively coupled discharge in NF3 this paper studies the dependence of the ion flux onto the powered electrode on the gas pressure. An essential feature of the model is the assumption that the ions' drift velocity in the sheath near the powered electrode is proportional to E α, where E=−ΔU (U being the self-bias potential), and α is a coefficient depending on the gas pressure and cross section of elastic ion-neutral collisions. The model also considers the role of γ-electrons, stochastic heating as well as the contribution of the active electron current to the global discharge power balance. Numerically solving the model's basic equations one can extract the magnitude of the ion flux (at three different gas pressures) in a technological etching device (Alcatel GIR 220) by using easily measurable quantities, notably the self-bias voltage and absorbed rf power.

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