Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping

2006 ◽  
Vol 527-529 ◽  
pp. 729-732 ◽  
Author(s):  
Murugesu Yoganathan ◽  
Ejiro Emorhokpor ◽  
Thomas Kerr ◽  
A. Gupta ◽  
C.D. Tanner ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Lattice Distortion ◽  
Lattice Strain ◽  
Bragg Reflection ◽  
Sharp Change ◽  
Lattice Curvature ◽  
Rocking Curve ◽  
X Ray ◽  
Grain Misorientation

SiC substrates produced at II-VI, Inc. have been characterized using x-ray rocking curve mapping (topography). The rocking curves have been measured in the -scan mode for the (0006) Bragg reflection of 6H and the (0004) reflection of 4H SiC substrates. The maps contain information extracted from the rocking curves, such as the peak angle () and the rocking curve broadening (FWHM). In the case when lattice distortion is present due to the elastic or plastic deformation, the peak angle () changes gradually upon scanning, with the d/dx gradient proportional to the lattice curvature in the plane of diffraction. Multi-peak reflections and/or sharp change in the value of indicate the presence of misoriented grains. X-ray rocking curve mapping of SiC substrates yields excellent measures of crystalline quality that contain important information on the lattice strain and sub-grain misorientation.

A 4 Crystal Monochromator for High Resolution Rocking Curves

1987 ◽  
Vol 31 ◽  
pp. 403-408
Author(s):  
Robert W. Green
Keyword(s):  
Bragg Reflection ◽  
Thin Layers ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Lattice Constants ◽  
Monochromator Crystal ◽  
Parallel Configuration ◽  
Double Crystal Diffractometer

X-ray characterization of single crystal materials in the form of thin layers can be accomplished with the use of a double crystal diffractometer. The resultant rocking curve is a convolution of the Bragg reflection from both the first and second crystals. The width of the rocking curve at half-height is a measure of the crystal perfection of a materiel. Since the FWHM for the material being analyzed cannot be less than that of the first crystal (Monochromator), the first crystal should be of very good crystal quality. The problem that arises with the two crystal parallel configuration (Fig. 1) is that the monochromator crystal must be changed each time a material of different orientation or stoichiometry with different resultant lattice constants is analyzed. This requires changing the monochromator and re-aligning the double crystal diffractometer.

X-Ray Rocking Curve Characterization of SiC Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 361-364
Author(s):  
Murugesu Yoganathan ◽  
Ping Wu ◽  
Ilya Zwieback
Keyword(s):  
Growth Process ◽  
Crystal Quality ◽  
Nondestructive Technique ◽  
Lattice Curvature ◽  
Rocking Curve ◽  
X Ray ◽  
Typical Variation

X-ray rocking curve characterization is a relatively fast and nondestructive technique that can be utilized to evaluate the crystal quality of SiC substrates. The contribution of lattice curvature to rocking curve broadening is estimated, and shown to be the major contribution to the measured broadening (FWHM). The feedback on lattice quality is used to optimize our SiC growth process. In the optimized growth runs, the typical variation in rocking curve sample angle Ω across the entire 3” diameter wafer is about 0.2 degrees. Possible mechanisms leading to changes in the lattice curvature are discussed.

Fabrication of Ultrathin Bragg Beam Splitter by Plasma Chemical Vaporization Machining

2012 ◽  
Vol 523-524 ◽  
pp. 40-45 ◽  
Author(s):  
Taito Osaka ◽  
Makina Yabashi ◽  
Yasuhisa Sano ◽  
Kensuke Tono ◽  
Yuichi Inubushi ◽  
...  
Keyword(s):  
Beam Splitter ◽  
Bragg Reflection ◽  
Free Electron Lasers ◽  
Crystalline Perfection ◽  
Plasma Chemical ◽  
High Quality ◽  
Rocking Curve ◽  
Mechanical Process ◽  
X Ray ◽  
Beam Splitters

A novel fabrication process was proposed to produce high-quality Bragg beam splitters for hard X-ray free-electron lasers (XFELs), which should consist of thin, bend-free, and robust Bragg-case crystals without any defects. A combination of a mechanical process and plasma chemical vaporization machining was employed. High crystalline perfection of the fabricated Si(110) crystal was verified with X-ray topography and rocking curve measurements. In addition, the thickness was evaluated to be 4.4 μm from the fringe period of the measured rocking curve. The crystal can be employed in Bragg beam splitters using the (220) Bragg reflection for X-ray pump-X-ray probe experiments with XFEL sources.

Digital X-Ray Rocking Curve Topography

1986 ◽  
Vol 82 ◽  
Author(s):  
T. S. Ananthanarayanan ◽  
R. G. Rosemeier ◽  
W. E. Mayo ◽  
J. H. Dinan
Keyword(s):  
Bragg Reflection ◽  
Strain Tensor ◽  
Epitaxial Films ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Density Maps ◽  
First Time ◽  
Considerable Body ◽  
Double Crystal Diffractometer

SUMMARYThere is a considerable body of work available illustrating the significance of X-ray rocking curve measurements in micro-electronic applications. For the first time a high resolution (100-150µm) 2-dimensional technique called DARC (Digital Autcmated Rocking Curve) topography has been implemented. This method is an enhancement of the conventional double crystal diffractometer using a real time 2-dimensional X-ray detector.Several materials have been successfully examined using DARC topography. Same of these include: Si, GaAs, AlGaAs, InGaAs, HgMnTe, Al, Inconel, steels, etc. By choosing the appropriate Bragg reflection multi-layered micro-electronic structures have been analyzed nondestructively. Several epitaxial films, including HgCdTe and ZnCdTe, grown by molecular beam epitaxy, have also been characterized using iARC topography. The rocking curve half width maps can be translated to dislocation density maps with relative ease. This technique also allows the deconvolution of the micro-plastic lattice strain ccaponent from the total strain tensor.

X-Ray Interference Measurements of Ultrathin Semiconductor Layers

1989 ◽  
Vol 145 ◽  
Author(s):  
C.R. Wie
Keyword(s):  
X Ray Diffraction ◽  
Nondestructive Technique ◽  
Interference Structure ◽  
Rocking Curve ◽  
X Ray ◽  
Double Heterojunction ◽  
Strained Quantum Well ◽  
Interference Measurements ◽  
Strained Layer Superlattices

AbstractWe present various x-ray diffraction phenomena from semiconductor hetero-epitaxial layers. Each of these phenomena gives useful information on the layers. Knowing what to look for in the x-ray rocking curve (XRC) can make this nondestructive technique a very powerful tool for characterization of a few A-several g.tm thick layers We discuss the use of individual Bragg peak, diffraction fringe, and interference structure to obtain layer information. We particularly emphasize the use of x-ray interference in studying buried strained quantum well or quantum barrier layers. We present experimental rocking curves of an AlGaAs/GaAs double heterojunction laser structure and GaInAs/GaAs strained layer superlattices in both <001> and <111> orientations.

scholarly journals Combined elastic strain and macroscopic stress characterization in polycrystalline Cu thin films

2006 ◽  
Vol 21 (1) ◽  
pp. 25-29 ◽  
Author(s):  
E. Eiper ◽  
K. J. Martinschitz ◽  
J. Keckes
Keyword(s):  
Thin Films ◽  
Simple Approach ◽  
Synchrotron Source ◽  
Rocking Curve ◽  
X Ray ◽  
Macroscopic Stress ◽  
Substrate Curvature ◽  
Stoney Formula ◽  
Elastic Strains

This work introduces a new simple approach to determine experimental X-ray elastic constants (XECs) of thin films by coupling the sin2ψ method and the substrate curvature technique. The approach is demonstrated on polycrystalline Cu thin films with the thickness 200, 800, and 2400 nm deposited on Si(100) substrates. Applying synchrotron radiation, the elastic strains in the films are determined using sin2ψ method while the macroscopic stresses are assessed by measuring the substrate curvature. The stresses are calculated using the Stoney formula from the radius of substrate curvature determined by the rocking curve measurement of substrate 400 reflection at different sample positions. Results show that the magnitude of the macroscopic stress in the films is proportional to the magnitude of the slope in the sin2ψ plots. On the basis of this observation, XECs of the films were calculated showing no dependence on the film thickness. The characterization of the samples was performed at the synchrotron source Hasylab.

Plane‐Wave X‐Ray Topography Using Imaging Plates and Its Application to Characterization of Lattice Distortion in As‐Grown Silicon

1997 ◽  
Vol 144 (11) ◽  
pp. 4035-4041 ◽  
Author(s):  
Y. Kudo ◽  
K.‐Y. Liu ◽  
S. Kojima ◽  
S. Kawado ◽  
T. Ishikawa
Keyword(s):  
Plane Wave ◽  
Lattice Distortion ◽  
X Ray ◽  
Imaging Plates

scholarly journals Spatially Resolved Characterization of Electromigration-Induced Plastic Deformation in al (0.5WT% CU) Interconnect

2002 ◽  
Vol 738 ◽  
Author(s):  
R.I. Barabash ◽  
G.E. Ice ◽  
N. Tamura ◽  
J.R. Patel ◽  
B.C. Valek ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Dislocation Structure ◽  
Early Stage ◽  
X Ray ◽  
Spatially Resolved ◽  
Cu Interconnect ◽  
Interconnect Lines ◽  
Distributed Dislocations

ABSTRACTElectromigration during accelerated testing can induce early stage plastic deformation in Al interconnect lines as recently revealed by the white beam scanning X-ray microdiffraction. In the present paper, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during anin-situelectromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking after electric current flow. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined.

Characterization of epilayers by X-ray double crystal rocking curve peak profile analysis

1995 ◽  
Vol 148 (1-2) ◽  
pp. 31-34 ◽  
Author(s):  
Haiyan An ◽  
Ming Li ◽  
Shuren Yang ◽  
Zhenhong Mai ◽  
Shiyong Liu
Keyword(s):  
Profile Analysis ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray

scholarly journals Structural and Thermal Unusual Properties in Invar Behavior of Ni-Mn Alloys

2020 ◽  
Vol 17 (2(SI)) ◽  
pp. 0629
Author(s):  
Salih Darweesh et al.
Keyword(s):  
Thermal Expansion ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Lattice Distortion ◽  
Negative Thermal Expansion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ferromagnetic Metals ◽  
Invar Effect

The Invar effect in 3D transition metal such as Ni and Mn, were prepared on a series composition of binary Ni1-xMnx system with x=0.3, 0.5, 0.8 by using powder metallurgy technique. In this work, the characterization of structural and thermal properties have been investigated experimentally by X-ray diffraction, thermal expansion coefficient and vibrating sample magnetometer (VSM) techniques. The results show that anonymously negative thermal expansion coefficient are changeable in the structure. The results were explained due to the instability relation between magnetic spins with lattice distortion on some of ferromagnetic metals.    

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