Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy

We have investigated through birefringence microscopy, a set of 3C-SiC crystals grown with the CF-PVT process, starting from different seeds and under different growth conditions. Through self nucleation experiments, the stable growth of very high quality 3C-SiC crystals at high temperature (2100°C) and at high rate (roughly 0.2 mm/h) is demonstrated. The possibility to develop bulk growth of 3C-SiC crystals is discussed.

Download Full-text

Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.55 ◽

2010 ◽

Vol 645-648 ◽

pp. 55-58 ◽

Cited By ~ 3

Author(s):

Irina G. Galben-Sandulache ◽

Guoli L. Sun ◽

Jean Marc Dedulle ◽

Thierry Ouisse ◽

Roland Madar ◽

...

Keyword(s):

Single Crystal ◽

Single Crystals ◽

Future Development ◽

Critical Issue ◽

Structural Quality ◽

Czochralski Growth ◽

High Quality ◽

Spontaneous Nucleation ◽

Bulk Growth ◽

Very High

The control of the nucleation step is a critical issue for a future development of 3C-SiC bulk growth. The possibility to get very high quality 3C-SiC single crystal through self-nucleation on graphite was already demonstrated but the large number of nuclei limits the growth of only one crystal. In this study, we have investigated different configurations that help improving the nucleation step. For that, the “necking” stage, well established in Bridgman or Czochralski growth processes, has been successfully applied to the growth of 3C-SiC with the CF-PVT technique. This has allowed getting only one 3C-SiC crystal. The enlarged parts, after having passed the neck, are of high structural quality.

Download Full-text

Comparative Study of GaN Growth Process by MOVPE

MRS Proceedings ◽

10.1557/proc-572-463 ◽

1999 ◽

Vol 572 ◽

Author(s):

Jingxi Sun ◽

J. M. Redwing ◽

T. F. Kuech

Keyword(s):

High Temperature ◽

Comparative Study ◽

Gas Phase ◽

Residence Time ◽

Gas Flow ◽

Flow Sheet ◽

Flow Zone ◽

High Quality ◽

Phase Temperature ◽

High Temperature Gas

ABSTRACTA comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. Our study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

Download Full-text

Comparative Study of Energy Harvesting from High Temperature Piezoelectric Single Crystals

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.091406 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091406 ◽

Cited By ~ 22

Author(s):

Vishwas Bedekar ◽

Josiah Oliver ◽

Shujun Zhang ◽

Shashank Priya

Keyword(s):

High Temperature ◽

Energy Harvesting ◽

Comparative Study ◽

Single Crystals

Download Full-text

ChemInform Abstract: Growth Conditions, Electrical Resistivity, Microhardness, and Thermal Properties of Nb5Sn2Ga Single Crystals Synthesized from High-Temperature Tin Solutions.

ChemInform ◽

10.1002/chin.199911032 ◽

2010 ◽

Vol 30 (11) ◽

pp. no-no

Author(s):

Shigeru Okada ◽

Kunio Kudou ◽

Toetsu Shishido ◽

Iwami Higashi ◽

Hiroyuki Horiuchi ◽

...

Keyword(s):

Electrical Resistivity ◽

Thermal Properties ◽

High Temperature ◽

Single Crystals ◽

Growth Conditions

Download Full-text

Sputter Deposition of Semiconductor Superlattices for Thermoelectric Applications

MRS Proceedings ◽

10.1557/proc-450-467 ◽

1996 ◽

Vol 450 ◽

Cited By ~ 1

Author(s):

Andrew V. Wagner ◽

Ronald J. Foreman ◽

Joseph C. Farmer ◽

Troy W. Barbee

Keyword(s):

Film Growth ◽

Lead Telluride ◽

Deposition Process ◽

Growth Conditions ◽

Sputter Deposition ◽

High Rate ◽

Dramatic Improvement ◽

High Deposition Rate ◽

High Quality ◽

Quantum Confined

ABSTRACTTheoretical dramatic improvement of the thermoelectric properties of materials by using quantum confinement in novel semiconductor nanostructures has lead to considerable interest in the thermoelectric community. Therefore, we are exploring the critical materials issues for fabrication of quantum confined structures by magnetron sputtering in the lead telluride and bismuth telluride families of materials. We have synthesized modulated structures from thermoelectric materials with bilayer periods of as little as 3.2 nm and shown that they are stable at deposition temperatures high enough to grow quality films. Issues critical to high quality film growth have been investigated such as nucleation and growth conditions and their effect on crystal orientation and growth morphology. These investigations show that nucleating the film at a temperature below the growth temperature of optimum electronic properties produces high quality films. Our work with sputter deposition, which is inherently a high rate deposition process, builds the technological base necessary to develop economical production of these advanced materials. High deposition rate is critical since, even if efficiencies comparable with CFC based refrigeration systems can be achieved, large quantities of quantum confined materials will be necessary for cost-competitive uses.

Download Full-text

Optimization of the Growth Conditions for High Quality CH3NH3PbBr3 Hybrid Perovskite Single Crystals

Crystal Growth & Design ◽

10.1021/acs.cgd.9b01429 ◽

2020 ◽

Vol 20 (3) ◽

pp. 1665-1672 ◽

Cited By ~ 2

Author(s):

Smaïl Amari ◽

Jean-Marie Verilhac ◽

Eric Gros D’Aillon ◽

Alain Ibanez ◽

Julien Zaccaro

Keyword(s):

Single Crystals ◽

Growth Conditions ◽

High Quality ◽

Hybrid Perovskite

Download Full-text

Electrical conductivity of barium titanate single crystals at very high temperature

Ferroelectrics ◽

10.1080/00150198808008803 ◽

1988 ◽

Vol 81 (1) ◽

pp. 23-26 ◽

Cited By ~ 2

Author(s):

Michel Jannin ◽

Bernard Jannot ◽

Pierre Lompre ◽

Genevieve Godefroy

Keyword(s):

Electrical Conductivity ◽

High Temperature ◽

Barium Titanate ◽

Single Crystals ◽

Very High

Download Full-text

Metallic layered germanium phosphide GeP5 for high rate flexible all-solid-state supercapacitors

Journal of Materials Chemistry A ◽

10.1039/c8ta06568c ◽

2018 ◽

Vol 6 (40) ◽

pp. 19409-19416 ◽

Cited By ~ 11

Author(s):

Bingchao Yang ◽

Anmin Nie ◽

Yukai Chang ◽

Yong Cheng ◽

Fusheng Wen ◽

...

Keyword(s):

Electrical Conductivity ◽

High Pressure ◽

High Temperature ◽

Solid State ◽

High Rate ◽

Two Dimensional ◽

Oriented Growth ◽

High Quality ◽

Growth Technique ◽

High Temperature High Pressure

In this study, high quality GeP5 crystals with two-dimensional (2D) layered structures and novel electrical conductivity of 2.4 × 106 S m−1 have been prepared under high-temperature high-pressure oriented growth technique (HTHP-OGT).

Download Full-text

Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.113 ◽

2020 ◽

Vol 1004 ◽

pp. 113-119

Author(s):

Peter J. Wellmann ◽

Philipp Schuh ◽

Manuel Kollmuss ◽

Michael Schöler ◽

Johannes Steiner ◽

...

Keyword(s):

Bulk Material ◽

Growth Conditions ◽

Free Standing ◽

Growth Interface ◽

Seed Transfer ◽

Bulk Growth ◽

Axial Temperature ◽

High Supersaturation ◽

Proper Design ◽

Stable Growth

Free standing 3C-SiC wafers with a dimeter of 50 mm and a thickness of ca. 0.8 mm have been grown on a regular base using 3C-SiC CVD seed transfer from Si wafers to a poly-SiC-carrier and a sublimation epitaxy configuration. Up to the thickness of almost 1 mm, stable growth conditions of the cubic polytype have been achieved. The high supersaturation was kept stable by the proper design of the hot zone that enables a high axial temperature gradient at the growth interface. The Sirich gas phase was realized by the application of a Tantalum getter that was integrated into the graphitebased growth cell. Furthermore, an adaption of the growth setup allowed the growth of 3C material with a diameter of 95 mm and bulk material up to 3 mm on 25 mm diameter. Computer simulations were used to determine the supersaturation of the growth setup for different source-to-seed distances. The minimum supersaturation necessary for stable growth of cubic SiC was found to be higher 0.1 for seed already containing the required 3C polytype.

Download Full-text