SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

2008 ◽  
Vol 600-603 ◽  
pp. 77-82 ◽  
Author(s):  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
Joseph J. Sumakeris ◽  
C. Hallin ◽  
Elif Berkman ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
High Throughput ◽  
Low Cost ◽  
Wide Bandgap ◽  
High Quality ◽  
Power Switching ◽  
Recent Emergence ◽  
Switching Devices

The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.

Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles

2013 ◽  
Vol 740-742 ◽  
pp. 85-90 ◽  
Author(s):  
Heikki I. Helava ◽  
Evgeny N. Mokhov ◽  
Oleg A. Avdeev ◽  
Mark G. Ramm ◽  
Dmitri P. Litvin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Refractory Metal ◽  
Lower Cost ◽  
Low Cost ◽  
Wide Bandgap ◽  
Tantalum Carbide ◽  
Metal Carbide ◽  
Metal Carbides ◽  
High Quality ◽  
Bandgap Semiconductors

Recently the wide bandgap semiconductors, silicon carbide (SiC) and aluminum nitride (AlN), have acquired increased importance due to the unique properties that make them applicable to a variety of rapidly-emerging, diverse technologies. In order to meet the challenges posed by these applications the materials need to be manufactured with the highest possible quality, both structural and chemical, at increasingly lower cost. This requirement places rather extreme constraints on the crystal growth as the simultaneous goals of high quality and low cost are generally incompatible. Refractory metal carbide technology, particularly, tantalum carbide (TaC), was originally developed for application in highly corrosive and reactive environments. The SiC group of Prof Yuri A Vodakov (for example, [1]) at Karmon Ltd in St Petersburg, Russia was the first to study and utilize the properties of refractory metal carbides, first for the growth of SiC and later for the growth of AlN. We discuss how the refractory metal carbides can answer many of the problems of growing SiC and AlN in a relatively simple and low cost manner.

Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

2016 ◽  
Vol 858 ◽  
pp. 119-124 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Masahiko Ito ◽  
Tetsuya Miyazawa ◽  
Hideyuki Uehigashi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Throughput ◽  
Growth Rates ◽  
High Speed ◽  
Stacking Faults ◽  
High Quality ◽  
Defect Reduction ◽  
Induced Defects ◽  
Defect Densities ◽  
Gas Supply

This paper reports on recent advances in 4H-SiC epitaxial growth toward high-throughput production of high-quality and uniform 150 mm-diameter 4H-SiC epilayers by enhancing of growth rates, improving uniformity and reducing defect densities. A vertical single-wafer type SiC epitaxial reactor is employed and high-speed wafer rotation is confirmed as effective, not only for enhancing growth rates without increasing the source gas supply but also improving thickness and doping uniformities. The current levels of reducing particle-induced defects, in-grown stacking faults, basal plane dislocations and the Z1/2 center (carbon vacancies) are reviewed.

Recent Advances in Wide Bandgap Power Switching Devices

2013 ◽  
Vol 50 (3) ◽  
pp. 179-188 ◽  
Author(s):  
K. Sheng ◽  
Q. Guo
Keyword(s):  
Wide Bandgap ◽  
Power Switching ◽  
Recent Advances ◽  
Switching Devices

Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor

2018 ◽  
Vol 924 ◽  
pp. 104-107
Author(s):  
Wei Li Lu ◽  
Jia Li ◽  
Yu Long Fang ◽  
Jia Yun Yin ◽  
Zhi Hong Feng
Keyword(s):  
Epitaxial Growth ◽  
Leakage Current ◽  
High Throughput ◽  
High Voltage ◽  
High Performance ◽  
Etching Process ◽  
Power Devices ◽  
High Quality ◽  
Recent Advances

High quality SiC Epilayers are essential for the development of high performance power devices. Killer defects such as triangular defects could cause leakage current paths within the high voltage SiC devices. This paper reports on the recent advances in 4H-SiC epitaxial growth toward high-throughput production in a commercial planetary reactor. The triangular defects are suppressed by the optimized pre-etching process, and the physics behind was investigated. The doping and thickness uniformities of the intra-wafer and wafer-to-wafer have also been improved.

X-Ray Diffraction Analysis of Heteroepitaxial Cd1-yZnyTe on GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
S. M. Johnson ◽  
W. L. Ahlgren ◽  
M. T. Smith ◽  
B. C. Johnston ◽  
S. Sen
Keyword(s):  
Plastic Deformation ◽  
High Resolution ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Lattice Mismatch ◽  
Tilt Boundary ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray

ABSTRACTX-ray diffraction techniques were used to evaluate Cd1-yZnyTe grown on GaAs substrate orientations of {100}2°, {111}, {012}, and {123}. High-quality layers having compositions at or close to the CdTe and ZnTe binary end points can be grown on GaAs, but most of the ternary compositions have extremely broad rocking curves. Layers grown on {123} and {012} were found to have large tilts toward {111} about <121> that varied systematically with the lattice mismatch; this is consistent with the mismatch being accommodated by the formation of a low-angle tilt boundary at the interface. {111} layers were found to be twinned, and thus {100}2° and {123} appear to better suited for vapor-phase epitaxial growth (VPE). High-resolution x-ray diffractometer measurements showed that the lattice mismatch is almost entirely taken up by plastic deformation, and only a small tetragonal distortion was measured. CdTe was distorted more than ZnTe, and a greater distortion was measured for layers grown on {100}2° than on {111}, in agreement with estimates made using bulk elastic constants.

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