Morphological Characterization of Sacrificial Layers of Porous Silicon for Photovoltaic Application

2009 ◽  
Vol 609 ◽  
pp. 269-273
Author(s):  
A. Ould-Abbas ◽  
M. Madani ◽  
N.E. Chabane Sari
Keyword(s):  
Porous Silicon ◽  
Low Cost ◽  
Silicon Layer ◽  
Morphological Characterization ◽  
Porous Silicon Layer ◽  
High Porosity ◽  
Porous Layers ◽  
Photovoltaic Application ◽  
Current Leads ◽  
Current Densities

We investigate the application of porous silicon (PS) in the field of the photovoltaic. In first step we realise a double porous silicon layer by electrochemical anodisation using two different current densities. The low current leads to a low porosity and during annealing, the recrystallisation of this layer allows epitaxial growth. The second current leads to a high porosity which permits the transfer onto a low cost substrate. During high temperature onto hydrogenation treatments of to passivate the structure and epitaxy in liquid phase, porous silicon is recristallized partially. In this work, a characterization by scanning electron microscopy informs us about the morphology of these porous layers.

Double porous silicon layer on multi-crystalline Si for photovoltaic application

2002 ◽  
Vol 72 (1-4) ◽  
pp. 271-276 ◽  
Author(s):  
M Lipiński ◽  
P Panek ◽  
Z Świątek ◽  
E Bełtowska ◽  
R Ciach
Keyword(s):  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Photovoltaic Application

Double Sided Porous Silicon on Patterned Substrates for Thermal Effect Microsystems

2000 ◽  
Vol 657 ◽  
Author(s):  
S. Périchon ◽  
V. Lysenko ◽  
B. Remaki ◽  
D. Barbier
Keyword(s):  
Porous Silicon ◽  
Thermal Effect ◽  
Layer Thickness ◽  
Porous Layer ◽  
Silicon Layer ◽  
Current Density Distribution ◽  
Porous Silicon Layer ◽  
Monocrystalline Silicon ◽  
Porous Layers ◽  
Nanocrystallite Size

ABSTRACTApplication of porous silicon in thermal microsystem structures often requires the formation of deep localized porous silicon layers. The most commonly used method to prepare the porous layers is the dc anodic etching of monocrystalline silicon in a hydrofluoric acid (HF) based electrolyte. However inhomogeneity of the nanocrystallite size along the layer depth due to the decrease of HF concentration within the pores as well as the poor uniformity of the porous layer thickness limit the elaboration of deep porous layers. Thus we propose an original pulsed anodisation technique, using a double tank etching cell that allows localized porous silicon layers formation throughout the whole wafer thickness.Furthermore a selective double sided pulsed anodisation of silicon was performed on patterned silicon substrates. Porous silicon is formed in pre-determined parts of the wafer using composite polysilicon-silicon nitride masking layers. Technological solutions to get rid of porous layer thickness inhomogeneity due to non uniform current density distribution are discussed. Finally a toric porous silicon layer, crossing the whole silicon wafer, surrounding a 20 mm diameter monocrystalline silicon cylinder was successfully achieved ensuring a new approach of thermal insulation for thermal effect microsystems.

Microstructure of pores in N+-silicon layers

1987 ◽  
Vol 45 ◽  
pp. 252-253
Author(s):  
V. S. Kaushik
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon On Insulator ◽  
Cross Sectional ◽  
Porous Layers ◽  
Doped Silicon ◽  
Oxidized Porous Silicon ◽  
P Type

Oxidized porous silicon has drawn considerable interest as one of the alternatives for implementing silicon-on-insulator technology. Buried porous layers can be formed by utilizing the preferential pore formation in highly doped silicon during anodic etching in hydrofluoric acid. This porous silicon layer (PSL) can be subsequently oxidized rapidly at low temperatures to yield a device-quality silicon island layer, which is dielectrically isolated from the substrate. Although pores can be formed in both n-type and p-type silicon, the latter has received more attention. This paper presents the results of cross-sectional TEM (XTEM) observations of the microstructure of pores in n+ silicon.Samples used in this study were n- /n+/n- doped silicon (001) wafers which had been anodically etched in a hydrofluoric acid solution to form the PSL in the n+ layer via trenches etched through the n- surface layer.

Effect of the Porous Silicon Layer Structure on Gas Adsorption

2020 ◽  
Vol 12 (4) ◽  
pp. 04020-1-04020-5
Author(s):  
A. P. Oksanich ◽  
◽  
S. E. Pritchin ◽  
M. A. Mashchenko ◽  
A. Yu. Bobryshev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Adsorption ◽  
Layer Structure ◽  
Silicon Layer ◽  
Porous Silicon Layer

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

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