Preparation and Photocatalytic Performance of Nano Titania-Coated Beads

2009 ◽  
Vol 620-622 ◽  
pp. 663-666
Author(s):  
Jin Wook Ha ◽  
Young Woong Do ◽  
Jae Hyun Park ◽  
Chul Hee Han
Keyword(s):  
Methylene Blue ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Photocatalytic Performance ◽  
Chemical Vapor ◽  
Decomposition Reaction ◽  
Chemical Vapor Deposition Method ◽  
Aqueous Environment ◽  
Cvd Method

Fluidized Bed Chemical Vapor Deposition (FB-CVD) method offers advantages over conventional Chemical Vapor Deposition method in coating three dimensional objects. In addition, catalysts prepared by FB-CVD method often show improved physicochemical properties. Thus, FB-CVD seems a useful method for coating TiO2 onto small beads, in view of their photocatalytic application in aqueous environment, for example. In this work, we produced TiO2 coated beads (1~2mm in diameter) of alumina, silica-gel, and glass in ~35nm thickness using FB-CVD method, and examined photocatalytic performance of TiO2 coated beads in the photocatalytic decomposition reaction of methylene blue solution. Based on the combined results of the decomposition reaction kinetics of methylene blue and FE-SEM images of the surface morphology of TiO2 coated beads, we were able to account for the photocatalytic performance with respect to characteristic features detected in the surface morphology.

Properties of I-Doped CuI Thin Films by Chemical Vapor Deposition (CVD)

2013 ◽  
Vol 832 ◽  
pp. 439-443 ◽  
Author(s):  
Nur Amalina Muhamad ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Current ◽  
Constant Voltage ◽  
Iodine Doping ◽  
Particle Structure ◽  
Cvd Method

In this paper, we present the properties of I-doped CuI thin films at different concentration of iodine dopant (e.g. 10mg, 20mg, 30mg, 40mg and 100mg). The doping of CuI was done by using double furnace chemical vapor deposition (CVD) method. The effects of I-doped CuI to its surface morphology and electrical were studied. The effect of iodine doping to surface morphology was measured by field emission scanning electron microscopy (FESEM). The morphology of all thin films shows insignificance changes in grain size, grain boundaries and particle structure as the doping concentration varies. For the electrical properties, high current at constant voltage of-5V to 5V was obtained. The resistivity of 10-1 was obtained for undoped CuI thin films. While, for the series of I-doped CuI thin films, the resistivity of 10-2 was obtained. The excess of hole conductor in the I-doped CuI thin films enhances the electrical conductivity of the films.

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

2005 ◽  
Vol 483-485 ◽  
pp. 93-96 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Satoshi Kuroda ◽  
Kazuo Arai ◽  
Akihiko Ohi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spiral Growth ◽  
Layer Surface ◽  
Screw Dislocations ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Cvd Method

Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face substrate, specular surface morphology of a wide area of up to 80% of a 2-inch epitaxial wafer was obtained at a low C/Si ratio growth condition of 0.6. The Micropipe in on-axis substrate was indicated to be filled with spiral growth and to be dissociated into screw dislocations during epitaxial growth. It was found that the appearance of basal plane dislocations on the epitaxial layer surface can be prevented by using an on-axis substrate.

Non-Resonant Two-Photon Absorption-Induced Photoluminescence Study on ZnO Nanostructures Epitaxially Grown on Si (100) Substrates by Chemical Vapor Deposition Method

2009 ◽  
Vol 1178 ◽  
Author(s):  
Zhuo Chen ◽  
Tom Salagaj ◽  
Christopher Jensen ◽  
Karlheinz Strobl ◽  
V Hongpinyo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Photon Absorption ◽  
Chemical Vapor Deposition Method ◽  
Zno Nanostructures ◽  
Two Photon Absorption ◽  
Zno Nanostructure ◽  
Two Photon ◽  
Cvd Method

AbstractWe report on experimental results of non-resonant two-photon absorption-induced photoluminescence in ZnO nanostructures, which may act as a possible route to excite ZnO nanostructure based lasers. Epitaxial ZnO nanorod-like nanostructure was grown on pre-seeded Si (100) substrates by chemical vapor deposition (CVD) method with a mixed ZnO/C solid source. Crystalline ZnO seeds were prepared and controlled by the rapid thermal annealing (RTA) treatment of e-beam deposited amorphous ZnO thin films with various thicknesses.

scholarly journals Fabrication of submillimeter-sized single-crystalline graphene arrays by a commercial printing-assisted CVD method

RSC Advances ◽  
2017 ◽  
Vol 7 (29) ◽  
pp. 17800-17805 ◽  
Author(s):  
Wei Xu ◽  
Wei Wang ◽  
Zhiyong Guo ◽  
Zhaoping Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Single Crystalline ◽  
Cvd Method

Submillimeter-sized single-crystalline graphene arrays have been successfully prepared by a commercial printing-assisted chemical vapor deposition method.

scholarly journals A Review of Perovskite Photovoltaic Materials’ Synthesis and Applications via Chemical Vapor Deposition Method

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3304 ◽  
Author(s):  
Xia Liu ◽  
Lianzhen Cao ◽  
Zhen Guo ◽  
Yingde Li ◽  
Weibo Gao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Performance Optimization ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Growth Environment ◽  
Cvd Method ◽  
Photovoltaic Materials ◽  
Perovskite Photovoltaic

Perovskite photovoltaic materials (PPMs) have emerged as one of superstar object for applications in photovoltaics due to their excellent properties—such as band-gap tunability, high carrier mobility, high optical gain, astrong nonlinear response—as well as simplicity of their integration with other types of optical and electronic structures. Meanwhile, PPMS and their constructed devices still present many challenges, such as stability, repeatability, and large area fabrication methods and so on. The key issue is: how can PPMs be prepared using an effective way which most of the readers care about. Chemical vapor deposition (CVD) technology with high efficiency, controllability, and repeatability has been regarded as a cost-effective road for fabricating high quality perovskites. This paper provides an overview of the recent progress in the synthesis and application of various PPMs via the CVD method. We mainly summarize the influence of different CVD technologies and important experimental parameters (temperature, pressure, growth environment, etc.) on the stabilization, structural design, and performance optimization of PPMS and devices. Furthermore, current challenges in the synthesis and application of PPMS using the CVD method are highlighted with suggested areas for future research.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band
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