2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

2005 ◽  
Vol 483-485 ◽  
pp. 93-96 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Satoshi Kuroda ◽  
Kazuo Arai ◽  
Akihiko Ohi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spiral Growth ◽  
Layer Surface ◽  
Screw Dislocations ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Cvd Method

Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face substrate, specular surface morphology of a wide area of up to 80% of a 2-inch epitaxial wafer was obtained at a low C/Si ratio growth condition of 0.6. The Micropipe in on-axis substrate was indicated to be filled with spiral growth and to be dissociated into screw dislocations during epitaxial growth. It was found that the appearance of basal plane dislocations on the epitaxial layer surface can be prevented by using an on-axis substrate.

Properties of I-Doped CuI Thin Films by Chemical Vapor Deposition (CVD)

2013 ◽  
Vol 832 ◽  
pp. 439-443 ◽  
Author(s):  
Nur Amalina Muhamad ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Current ◽  
Constant Voltage ◽  
Iodine Doping ◽  
Particle Structure ◽  
Cvd Method

In this paper, we present the properties of I-doped CuI thin films at different concentration of iodine dopant (e.g. 10mg, 20mg, 30mg, 40mg and 100mg). The doping of CuI was done by using double furnace chemical vapor deposition (CVD) method. The effects of I-doped CuI to its surface morphology and electrical were studied. The effect of iodine doping to surface morphology was measured by field emission scanning electron microscopy (FESEM). The morphology of all thin films shows insignificance changes in grain size, grain boundaries and particle structure as the doping concentration varies. For the electrical properties, high current at constant voltage of-5V to 5V was obtained. The resistivity of 10-1 was obtained for undoped CuI thin films. While, for the series of I-doped CuI thin films, the resistivity of 10-2 was obtained. The excess of hole conductor in the I-doped CuI thin films enhances the electrical conductivity of the films.

Preparation and Photocatalytic Performance of Nano Titania-Coated Beads

2009 ◽  
Vol 620-622 ◽  
pp. 663-666
Author(s):  
Jin Wook Ha ◽  
Young Woong Do ◽  
Jae Hyun Park ◽  
Chul Hee Han
Keyword(s):  
Methylene Blue ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Photocatalytic Performance ◽  
Chemical Vapor ◽  
Decomposition Reaction ◽  
Chemical Vapor Deposition Method ◽  
Aqueous Environment ◽  
Cvd Method

Fluidized Bed Chemical Vapor Deposition (FB-CVD) method offers advantages over conventional Chemical Vapor Deposition method in coating three dimensional objects. In addition, catalysts prepared by FB-CVD method often show improved physicochemical properties. Thus, FB-CVD seems a useful method for coating TiO2 onto small beads, in view of their photocatalytic application in aqueous environment, for example. In this work, we produced TiO2 coated beads (1~2mm in diameter) of alumina, silica-gel, and glass in ~35nm thickness using FB-CVD method, and examined photocatalytic performance of TiO2 coated beads in the photocatalytic decomposition reaction of methylene blue solution. Based on the combined results of the decomposition reaction kinetics of methylene blue and FE-SEM images of the surface morphology of TiO2 coated beads, we were able to account for the photocatalytic performance with respect to characteristic features detected in the surface morphology.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

Properties and Production Mechanism of Low-Temperature Deposited CAT-CVD Poly-Silicon films

1992 ◽  
Vol 283 ◽  
Author(s):  
Hideki Matsumura ◽  
Yoichi Hosoda ◽  
Seijiro Furukawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Silicon Films ◽  
Production Mechanism ◽  
Cvd Method ◽  
Poly Silicon ◽  
Deposition Conditions

ABSTRACTPoly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.

Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

2018 ◽  
Vol 667 ◽  
pp. 48-54
Author(s):  
Adreen Azman ◽  
Ahmad Shuhaimi ◽  
Al-Zuhairi Omar ◽  
Anas Kamarundzaman ◽  
Muhammad Imran Mustafa Abdul Khudus ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Enhanced Surface

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Surface morphology and preferential orientation growth of TaC crystals formed by chemical vapor deposition

2009 ◽  
Vol 517 (11) ◽  
pp. 3235-3239 ◽  
Author(s):  
Xiang Xiong ◽  
Zhao-ke Chen ◽  
Bai-yun Huang ◽  
Guo-dong Li ◽  
Feng Zheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Preferential Orientation ◽  
Orientation Growth
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