Effect of Various CF4/CH4 Flow Ratios on Structure and Optical Band Gap of Fluorinated Diamond-Like Carbon Thin Films

2010 ◽  
Vol 663-665 ◽  
pp. 312-315
Author(s):  
Jian Rong Xiao ◽  
Tao Tong ◽  
Yan Wei Li ◽  
Xin Hai Li
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Uniform Structure ◽  
Diamond Like Carbon ◽  
Radio Frequency Plasma ◽  
Frequency Plasma

Fluorinated diamond-like carbon (F-DLC) thin films are deposited using radio frequency plasma enhanced chemical vapor deposition under various gas flow ratios. The surface morphology of the F-DLC thin films deposited at lower gas flow ratios is a compact and uniform structure, and it became rough with the increase of gas flow ratios. The relative atomic contents of fluorine and chemical bonding configurations of C-Fx (x=1, 2, 3) in the thin films increases with the increase of gas flow ratios. The optical band gap of the thin films presents a decrease of different degree with the increase of gas flow ratios.

THE OPTICAL CHARACTERISTICS OF NITROGEN-DOPED AMORPHOUS CARBON THIN-FILMS GROWN ON NOVEL HEAT-TOLERANT FLEXIBLE PLASTIC SUBSTRATES BY A NEWLY DEVELOPED MICROWAVE SURFACE WAVE PLASMA CHEMICAL VAPOR DEPOSITION METHOD

2004 ◽  
Vol 11 (06) ◽  
pp. 585-589 ◽  
Author(s):  
M. RUSOP ◽  
A. M. M. OMER ◽  
S. ADHIKARI ◽  
S. ADHIKARY ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plastic Substrates ◽  
Plasma Chemical Vapor Deposition ◽  
Nitrogen Doped ◽  
Heat Tolerant

Nitrogen-doped amorphous carbon ( a - C : N ) thin-films have been deposited on novel heat tolerant flexible plastic substrates by a newly developed microwave surface wave plasma chemical vapor deposition (MWSWP-CVD) method. Methane gas and also camphor dissolved with ethyl alcohol gas composition have been used as plasma source. Nitrogen gas has been used as a dopant material for a - C : N films. In this paper, the optical characteristics of absorption coefficients and band gaps for a - C : N are discussed. The optical band gap of a - C : N films was found to be approximately 1.7 eV, which is close to the suitable band gap for solar cell. The optical band gap of a - C : N was found to be dependent on the composition gas source pressures.

scholarly journals Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD

RSC Advances ◽  
2018 ◽  
Vol 8 (40) ◽  
pp. 22552-22558 ◽  
Author(s):  
Clara Sanchez-Perez ◽  
Caroline E. Knapp ◽  
Ross H. Colman ◽  
Carlos Sotelo-Vazquez ◽  
Raija Oilunkaniemi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Single Source ◽  
2D Semiconductors ◽  
Single Source Precursor ◽  
Pressure Chemical

Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η5-C5H4Se)2Ti(η5-C5H5)2]2 (1).

Tribological Behavior of DLC Films by RF-PECVD at the Elevated Temperature

2007 ◽  
Vol 353-358 ◽  
pp. 1781-1784
Author(s):  
Yong Kyung Cho ◽  
Yun Ha Shin ◽  
Sung Hoon Jeong ◽  
Young Ze Lee
Keyword(s):  
Raman Spectroscopy ◽  
Elevated Temperature ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Tribological Behavior ◽  
Chemical Vapor ◽  
Diamond Like Carbon ◽  
Radio Frequency Plasma ◽  
Frequency Plasma ◽  
Higher Temperature

The tribological behaviors of Diamond-like carbon (DLC) films, prepared by the radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method, were studied in the room temperature and the elevated temperature. The ball-on-disk tests with DLC films on steel specimens were conducted at a sliding speed of 60 rpm, a load of 10 N, and surrounding temperatures of 25°C and 75°C. The results show that the coefficients of friction and the amounts of wear of DLC films were decreased at higher temperature. After tests the wear tracks of hydrogenated DLC film were analyzed by Raman spectroscopy.

EFFECT OF GAS PRESSURE ON THE BORON-DOPED HYDROGENATED AMORPHOUS CARBON THIN FILMS GROWN BY RADIO FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

2006 ◽  
Vol 13 (01) ◽  
pp. 7-12 ◽  
Author(s):  
M. RUSOP ◽  
S. ABDULLAH ◽  
J. PODDER ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Radio Frequency Plasma ◽  
Boron Doped ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous ◽  
Deposited Films

Boron-doped hydrogenated amorphous carbon ( a-C:B:H ) thin films have been deposited by radio frequency plasma-enhanced chemical vapor deposition (r.f. PECVD) with a frequency of 13.56 MHz at room temperature using pure methane as a precursor of carbon source mixed with hydrogen ( H 2) as a carrier gas. The films were prepared by varying the r.f. power, different gas flow rates of CH 4, and partial pressure of mixed gas ( CH 4/ H 2) using boron as a solid target. The thickness, structural bonding, and optical properties of the as-deposited films were studied by Alpha-step surface profiler, Raman spectroscopy (Raman), Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and UV–visible spectroscopy. It was found that changing the deposition pressure in addition of using solid boron target in the r.f. PECVD process has a profound effect on the properties of the deposited films as evidenced from their Raman scattering and optical results. The grown a-C:B:H films were found to be smooth and their thicknesses were in the range of 200 to 400 nm for 1 h of deposition time. Films deposited at lower pressure appear brownish in color, whereas those deposited at higher pressure appear pale yellowish. The as-deposited film was found to be dominated by trigonal (sp2) rather than tetrahedral (sp3), which might be due to the formation of small crystallites. The optical band gap is found to be reduced from 2.60 to 1.62 eV as the partial pressure of CH 4/ H 2 gas is reduced.

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