Mechanical Properties of Nanocrystalline Diamond Film Prepared by HFCVD

2011 ◽  
Vol 675-677 ◽  
pp. 751-754
Author(s):  
Feng Xu ◽  
Dun Wen Zuo ◽  
Wen Zhuang Lu ◽  
Min Mang
Keyword(s):  
Mechanical Properties ◽  
Grain Size ◽  
Elastic Modulus ◽  
Substrate Temperature ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Substrate Temperature ◽  
Nanocrystalline Diamond ◽  
Hot Filament

Nanocrystalline diamond film was deposited on silicon by double bias hot filament chemical vapor deposition (HFCVD) system. The effect of substrate temperature on the microstructure and mechanical properties of the film were investigated systematically. More defects and non-diamond contents were found as the decrease of grain size, which cause the decrease of hardness and elastic modulus. It is shown that the proper substrate temperature is in the range of 720~760 . The excessively high substrate temperature leads to the °C dramatic increase of nondiamond content and the decrease of mechanical properties.

Effect of Deposition Temperature on Surface Roughness of Nanocrystalline Diamond Film

2012 ◽  
Vol 476-478 ◽  
pp. 2353-2356
Author(s):  
Wen Qi Dai ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Yi Feng Liu ◽  
Ke Tang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Different Temperatures ◽  
Hot Filament

Nanocrystalline diamond (NCD) films were synthesized by hot-filament chemical vapor deposition (HFCVD) method at different temperatures (600 °C, 620°C, 640°C and 660°C). The AFM and Raman analyses demonstrated that deposition temperature has a great effect on the surface roughness and quality of NCD films and 620°C is the temperature to grow NCD films with smooth surfaces.

Effect of Carbon Concentration on the Optical Properties of Nanocrystalline Diamond Films Deposited by Hot-Filament Chemical Vapor Deposition Method

2008 ◽  
Vol 8 (5) ◽  
pp. 2534-2539
Author(s):  
Linjun Wang ◽  
Jianmin Liu ◽  
Ling Ren ◽  
Qingfeng Su ◽  
Weimin Shi ◽  
...  
Keyword(s):  
Grain Size ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Carbon Concentration ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Grain ◽  
Hot Filament

With reducing diamond grain size to nano-grade, the increase of grain boundaries and non-diamond phase will result in the change of the optical properties of chemical vapor deposition (CVD) diamond films. In this paper, the structure, morphology and optical properties of nanocrystalline diamond (NCD) films, deposited by hot-filament chemical vapor deposition (HFCVD) method under different carbon concentration, are investigated by SEM, Raman scattering spectroscopy, as well as optical transmission spectra and spectroscopic ellipsometry. With increasing the carbon concentration during the film deposition, the diamond grain size is reduced and thus a smooth diamond film can be obtained. According to the data on the absorption coefficient in the wavelength range from 200 to 1100 nm, the optical gap of the NCD films decreases from 4.3 eV to 3.2 eV with increasing the carbon concentration from 2.0% to 3.0%. From the fitting results on the spectroscopic ellipsometric data with a four-layer model in the photon energy range of 0.75–1.5 eV, we can find the diamond film has a lower refractive index (n) and a higher extinction coefficient (k) when the carbon concentration increases.

Nanocrystalline Diamond Film Deposited by Double Bias-Voltage Assited HF-PECVD System

2015 ◽  
Vol 1120-1121 ◽  
pp. 243-248
Author(s):  
Yong Zhang ◽  
En Lei Zhang ◽  
Zhao Long Lin
Keyword(s):  
Bias Voltage ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Raman Band ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Nucleation Density ◽  
New Process ◽  
Hot Filament

A new process has been developed to obtain high density nanocrystalline diamond (NCD) film via a double bias voltage hot filament-assisted plasma enhanced chemical vapor deposition (HF-PECVD). The microstructure and characterization of the film were analysed by SEM, Raman and AFM. The results show that the NCD film has higher nucleation density and smooth surface, the nanocrysatalline size was in diameter of about 40 nm. Three Raman band near 1150m-1, 1330 cm-1 and 1590m-1 lie in the specrum. The growth mechanism of naocrystalline diamond film was analysized at last.

Examination of the material properties and performance of thin-diamond film cutting tool inserts produced by arc-jet and hot filament chemical vapor deposition

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Cutting Tool ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
And Performance ◽  
Hot Filament

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.

Achieving High Nucleation Density of Diamond Film Under Low Pressures in Hot-Filament Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
Yan Chen ◽  
Jun Mei ◽  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Heteroepitaxial Growth ◽  
Hot Filament ◽  
Low Pressures ◽  
Gaseous Source

AbstractDiamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109–1011/cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxial growth of monocrystalline diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.

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