A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates

Abstract. The aim of this study is to compare DC characteristics of ‘as-grown’ and hydrogen (H)-intercalated epitaxial graphenes on SiC substrates [1,2]. Epitaxial graphene is grown on SiC at 1400-1600C, and H-intercalation is performed via in-situ introduction of Hydrogen during the graphitization process [6]. The fabrication processing steps used to define test structures are identical for the two materials. Results on the DC behaviour and uniformity issues with respect to both materials are reported. As-grown material behaves as a linear resistance, while H-intercalated demonstrates a non-linear characteristic. Hysteresis effects and time dependent behaviors are also observed in both materials. Extensive Hall measurements are performed on both materials with the aim of providing a qualitative understanding of material uniformity in both epi-graphenes.

Download Full-text

In-Situ Observation of Irradiance and Time-Dependent Changes in Phytoplankton Absorption Coefficients

10.21236/ada629844 ◽

1999 ◽

Author(s):

Mary J. Perry

Keyword(s):

Time Dependent ◽

In Situ Observation ◽

Absorption Coefficients ◽

Phytoplankton Absorption

Download Full-text

In Situ Tests on Creep Behavior of Rock Mass with Joint or Shearing Zone in Foundation of Large-Scale Hydroelectric Projects

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.261-263.1097 ◽

2004 ◽

Vol 261-263 ◽

pp. 1097-1102 ◽

Cited By ~ 2

Author(s):

Jian Liu ◽

Xia Ting Feng ◽

Xiu Li Ding ◽

Huo Ming Zhou

Keyword(s):

Rock Mass ◽

Creep Behavior ◽

Large Scale ◽

Time Dependent ◽

Three Gorges Project ◽

Three Gorges ◽

The Three Gorges ◽

The Three Gorges Project

The time-dependent behavior of rock mass, which is generally governed by joints and shearing zones, is of great significance for engineering design and prediction of long-term deformation and stability. In situ creep test is a more effective method than laboratory test in characterizing the creep behavior of rock mass with joint or shearing zone due to the complexity of field conditions. A series of in situ creep tests on granite with joint at the shiplock area of the Three-Gorges Project and basalt with shearing zone at the right abutment of the Xiluodu Project were performed in this study. Based on the test results, the stress-displacement-time responses of the joints and basalt are analyzed, and their time-dependent constitutive model and model coefficients are given, which is crucial for the design to prevent the creep deformations of rock masses from causing the failure of the operation of the shiplock gate at the Three-Gorges Project and long-term stability of the Xiluodu arc dam.

Download Full-text

Low Temperature Device Processing Technology for II-VI Semiconductors

MRS Proceedings ◽

10.1557/proc-161-323 ◽

1989 ◽

Vol 161 ◽

Cited By ~ 1

Author(s):

D.L. Dreifus ◽

R.M. Kolbas ◽

B.P. Sneed ◽

J.F. Schetzina

Keyword(s):

Low Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Epitaxial Layers ◽

Processing Technologies ◽

Device Processing ◽

Device Structures ◽

Lift Off ◽

Processing Steps

ABSTRACTLow temperature (<60° C) processing technologies that avoid potentially damaging processing steps have been developed for devices fabricated from II-VI semiconductor epitaxial layers grown by photoassisted molecular beam epitaxy (MBE). These low temperature technologies include: 1) photolithography (1 µm geometries), 2) calibrated etchants (rates as low as 30 Å/s), 3) a metallization lift-off process employing a photoresist profiler, 4) an interlevel metal dielectric, and 5) an insulator technology for metal-insulator-semiconductor (MIS) structures. A number of first demonstration devices including field-effect transistors and p-n junctions have been fabricated from II-VI epitaxial layers grown by photoassisted MBE and processed using the technology described here. In this paper, two advanced device structures, processed at <60° C, will be presented: 1) CdTe:As-CdTe:In p-n junction detectors, grown in situ by photoassisted MBE, and 2) HgCdTe-HgTe-CdZnTe quantum-well modulation-doped field-effect transistors (MODFETs).

Download Full-text

Determination of the Internal Electric Field in the Electrooptic Active Layer of Multilayer Polymer Stacks

MRS Proceedings ◽

10.1557/proc-488-413 ◽

1997 ◽

Vol 488 ◽

Author(s):

S. Grossmann ◽

T. Weyrauch ◽

W. Haase

Keyword(s):

Electric Field ◽

Electric Fields ◽

Time Dependent ◽

Polymer Interfaces ◽

Internal Electric Field ◽

Inhomogeneous Distribution ◽

Time Dependent Behaviour ◽

Dependent Behaviour

AbstractWe report on a method to investigate the inhomogeneous distribution of an electric dc field in multilayer polymer stacks. In situ electroabsorption (EA) measurements are applied in order to estimate the local electric fields in double layer polymer films. The observed time dependent behaviour is compared with a model equivalent circuit. The results indicate that besides the relation of ohmic resistivities and capacities of the different polymer layers in the investigated systems also the influence of the electric properties of polymer/electrode and polymer/polymer interfaces must be considered.

Download Full-text