15 kV n-GTOs in 4H-SiC
2019 ◽
Vol 963
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pp. 651-654
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Keyword(s):
Off Time
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High performance 15 kV n-GTOs were demonstrated for the first time in 4H-SiC. The device utilized a 140 μm thick, lightly doped n-type drift layer, with 1450°C lifetime enhancement oxidation, which resulted in a carrier lifetime of 17.5 μs. The p+ backside injector layer was thinned to minimize parasitic resistances. A room temperature forward voltage drop of 5.18 V was observed at a current density of 100A/cm2. A 1 cm2 device showed a leakage current of 0.17 μA at 15 kV. The 4H-SiC n-GTO showed latching characteristics, and showed a turn-off time of 170 ns in a resistive load switching setup, which represents about a factor of 45 improvement in turn-off speed over 4H-SiC p-GTOs with comparable voltage and current ratings.
2012 ◽
Vol 717-720
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pp. 1059-1064
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Keyword(s):
2014 ◽
Vol 778-780
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pp. 1038-1041
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2005 ◽
Vol 483-485
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pp. 901-904
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1995 ◽
Vol 42
(6)
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pp. 1174-1179
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2012 ◽
Vol 717-720
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pp. 953-956
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Keyword(s):
2010 ◽
Vol 645-648
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pp. 905-908
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Keyword(s):
2013 ◽
Vol 740-742
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pp. 895-898
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2014 ◽
Vol 778-780
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pp. 135-138
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Keyword(s):
2010 ◽
Vol 645-648
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pp. 1025-1028
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