Ultrahigh Purity Copper Alloy Target Used Innanoscale ULSI Interconnects

2015 ◽  
Vol 815 ◽  
pp. 22-29
Author(s):  
Hao Zeng ◽  
Chao Lv ◽  
Yan Gao ◽  
Ting Yi Dong ◽  
Yong Hui Wang ◽  
...  

Current ULSI circuits have features with dimensions in the nanoscale region. As the critical dimension shrinks, Cu BEOL systems face reliability impacts. Alloying has been proved to be a promising technique to retard grain boundary electro-migration (EM). In this paper, dilute Cu Alloys such as Cu-Al, Cu-Mn for dual-damascene interconnect applications have been investigated. The alloy chosen principle for nanoscale interconnects has been discussed. The ultrahigh purity copper alloy target properties including purity, alloy composition, grain size and sputtering performance were investigated, to lay the foundation for the application of the large-size ultrahigh purity copper alloy target used for 300mm wafer fabrication. The relationships between deposited film behaviors and sputtering target properties in some applications were also discussed. In order to acquire high quality thin film, the properties of sputtering target such as alloy composition homogeneity, grain size and uniformity et al. have to be well controlled by proper fabrication techniques.

2016 ◽  
Vol 848 ◽  
pp. 430-434
Author(s):  
Yan Gao ◽  
Xiu Liu ◽  
Jin Jiang He ◽  
Hao Zeng ◽  
Xiao Dong Xiong ◽  
...  

With the development of semiconductor technology, the size of complementary metal oxide semiconductor (CMOS) devices has been scaled down to nanoscale dimensions. The technology of copper interconnection is the mainstream technology, so the request of the copper target is more and more rigor. This article analyzes the impact factors on the copper alloy target capability, including oxidation and strength. The aim of this investigation is to set up a bridge between the vendors of copper targets and the foundries of integrated circuit (IC) chip, and the base for the next generation copper targets.


2015 ◽  
Vol 815 ◽  
pp. 61-66
Author(s):  
Jin Jiang He ◽  
Shu Qin Liu ◽  
Jun Feng Luo ◽  
Yue Wang ◽  
Yan Gao ◽  
...  

High-purity precious metal and its alloy targets make a very important role in semiconductor manufacturing. In this paper, the preparation methods of high performance sputtering targets (including silver, platinum and its alloy, ruthenium materials) for advanced semiconductor manufacturing were introduced. The relationships between deposited film behaviors and sputtering target properties in some applications were also discussed. In order to acquire high quality thin film, the properties of sputtering target such as density, alloy composition homogeneity, grain size and uniformity et al. have to be well controlled by proper fabrication techniques.


1985 ◽  
Vol 54 ◽  
Author(s):  
Albertus G. Dirks ◽  
Tien Tien ◽  
Janet M. Towner

ABSTRACTThe microstructure and properties of thin films depends strongly upon the alloy composition. A study was made of the metallurgical aspects of homogeneous Al alloy films, particularly the binary Al-Ti and the ternary Al-Ti-Si systems. Electrical resistivity, grain size morphology, second phase formation and electromigration have been studied as a function of the alloy composition and its heat treatment.


1986 ◽  
Vol 71 ◽  
Author(s):  
R. V. Joshi ◽  
D. A. Smith

AbstractThe characteristics of Selective LPCVD tungsten films produced by silicon reduction of tungsten hexafluoride are presented. The tungsten films deposited using Si(100), Si(111) and polysilicon undoped and doped substrates are analyzed by X-RAY, TEM, RBS, AES, SIMS and SEM. The as deposited bcc tungsten films are polycrystalline with a grain size 80 - 100Å. The effect of annealing temperature and time on the crystal structure of films was studied. Tungsten reacts to form tungsten silicide at 600°C. The silicide grain size is of the order of 100 - 200Å at 600°C and increases gradually to 400 - 500Å at 1000°C. The oxygen impurities in the film retard the silicide formation further at 1000°C. Silicon from the substrate out-diffuses to the film surface and reacts with the presence of oxygen impurities in the annealing ambient to form Si-O at 1000°C. As deposited film resistivities of 130-140 micro-ohm-cm are achieved reproducibly and reach 60-70 micro-ohm-cm after 1000°C annealing in nitrogen or argon ambient. The impurities H, C, O and F are found in the as deposited films.


2013 ◽  
Vol 423-426 ◽  
pp. 286-289 ◽  
Author(s):  
Chang Gui Pei ◽  
Pei Kang Bai ◽  
Zhang Xia Guo

Different alloy composition has a significant effect on the magnetic properties of non-oriented electrical steel . Alloy composition effected recrystallization of product through the effect of hot rolling plate grain size, then effected magnetic properties. Supposing everything other component and process remain equal, the iron loss significantly decreased and magnetic induction deterioration was not obvious with the increase of Manganese element and the grain size increases.


2011 ◽  
Vol 674 ◽  
pp. 177-188 ◽  
Author(s):  
Wojciech Głuchowski ◽  
Jerzy Stobrawa ◽  
Zbigniew Rdzawski ◽  
Witold Malec

A growing trend to use new copper-based functional materials is observed recently world-wide. Within this group of materials particular attention is drawn to those with ultrafine grain size of a copper matrix. This study was aimed to investigate mechanical properties, electrical conductivity and microstructure in strips of precipitation strengthened copper alloys processed by continuous repetitive corrugation and straightening (CRCS). Tests were performed with the copper alloy strips using original die set construction installed on tensile testing machine. The microstructure was investigated using optical and electron microscopy (TEM and SEM equipped with EBSD). Proposition of semi industrial application of this method have been also presented. The CRCS process effectively reduced the grain size of a copper alloy strips, demonstrating the CRCS as a promising new method for producing ultra fine grained metallic strips.


1996 ◽  
Vol 11 (11) ◽  
pp. 2717-2724 ◽  
Author(s):  
J. Y. Huang ◽  
Y. D. Yu ◽  
Y. K. Wu ◽  
H. Q. Ye ◽  
Z. F. Dong

A ferromagnetic and supersaturated fcc Fe60Cu40 solid solution was prepared by mechanical alloying (MA). The phase transformations of the as-milled Fe60Cu40 powder upon heating to 1400 °C and subsequently cooling to room temperature were characterized by differential thermal analysis (DTA) and thermal magnetic measurement. The fcc Fe60Cu40 solid solution decomposes into α–Fe(Cu) + γ–Fe(Cu) + Cu(Fe) upon heating from 300 to 460 °C, and on further heating, α–Fe(Cu) transforms to γ–Fe(Cu) at 640 → 760 °C; during cooling, the reverse transformation occurs from 800 → 640 °C (obtained from thermomagnetic measurement) or from 700 → 622 °C (obtained from DTA). The γ ⇆ α transformation in mechanically alloyed Fe60Cu40 nanocrystalline occurs in a wide temperature range; the transformation temperature is higher than that of the martensite transformation in as-cast Fe–Cu alloys, but is much lower than that of the allotropic transformation of pure Fe. These differences may be caused by the different fabrication process, the nonequilibrium microstructure of MA, as well as the inhomogeneous grain size in α–Fe(Cu). High resolution transmission electron microscope (HRTEM) observations carried out in the specimen after the DTA run show that N-W or K-S orientation relationships exist between α–Fe(Cu) and Cu(Fe), which also represent the orientation relationship between α–Fe(Cu) and γ–Fe(Cu) due to excellent coherency between γ–Fe(Cu) and Cu(Fe). The grain size of the α–Fe(Cu) is inhomogeneous and varies from 50–600 mm. Energy dispersive x-ray spectroscopy (EDXS) result shows that the Cu content in these α–Fe(Cu) grains reaches as high as 9.5 at. % even after DTA heating to 1400 °C, which is even higher than the maximum solubility of Cu in γ–Fe above 1094 °C. This may be caused by the small grain size of α–Fe(Cu).


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