Homogeneous Al-Ti and Al-Ti-Si Thin Alloy Films

1985 ◽  
Vol 54 ◽  
Author(s):  
Albertus G. Dirks ◽  
Tien Tien ◽  
Janet M. Towner
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Phase Formation ◽  
Alloy Composition ◽  
Al Alloy ◽  
Second Phase ◽  
Alloy Films ◽  
Microstructure And Properties

ABSTRACTThe microstructure and properties of thin films depends strongly upon the alloy composition. A study was made of the metallurgical aspects of homogeneous Al alloy films, particularly the binary Al-Ti and the ternary Al-Ti-Si systems. Electrical resistivity, grain size morphology, second phase formation and electromigration have been studied as a function of the alloy composition and its heat treatment.

Cu and Dilute Binary Cu(Ti), Cu(Sn) and Cu(Al) Thin Films: Texture, Grain Growth and Resistivity

2002 ◽  
Vol 721 ◽  
Author(s):  
A. Gungor ◽  
K. Barmak ◽  
A. D. Rollett ◽  
C. Cabral ◽  
J. M. E. Harper
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Fiber Texture ◽  
Al Alloy ◽  
Alloy Films ◽  
Transmission Electron ◽  
Pure Cu

AbstractAnnealing Cu and dilute Cu(Ti), Cu(Sn) and Cu(Al) alloy films resulted in the strengthening of film texture, with the strongest <111> fiber texture being found for Cu(Ti). Annealing also resulted in a decrease of electrical resistivity and the growth of grains, with the largest grain size and lowest resistivity being seen for pure Cu itself. Among the alloy films, the lowest resistivity was found for Cu(Ti) and the largest grain size for Cu(Al). Electron beam evaporated films with compositions in the range of 2.0-3.0 at% and thicknesses in the range of 420-540 nm were annealed at 400°C for 5 hours. Four point probe resistance measurement, xray diffraction and transmission electron microscopy were used to follow the changes in film resistivity, texture and grain size.

Texture Formation and Superconducting Properties of YBa2Cu3Ox Thin Films Prepared by Solution Process on LaAlO3 Single Crystals

2000 ◽  
Vol 659 ◽  
Author(s):  
Y.-A Jee ◽  
B. Ma ◽  
M. Li ◽  
B. L. Fisher ◽  
U. Balachandran
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Raman Spectroscopy ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Phase Formation ◽  
Heat Treatment Temperature ◽  
Treatment Temperature ◽  
Argon Atmosphere ◽  
Second Phase

ABSTRACTYBa2Cu3Ox (YBCO) thin films were fabricated by the trifluoroacetate (TFA) process on LaAlO3 (LAO) single crystal in an argon atmosphere. We focused on lowering the heat treatment temperature by decreasing the oxygen partial pressure to adopt the TFA process to metallic substrates. YBCO phase formation was checked by measuring Tc with the inductive method. In-plane and out-of-plane film textures were evaluated by phi-scan and omega scan, respectively. Raman spectroscopy was used to estimate grain connectivity, in-plane texture, and second-phase formation of the films. Although Raman spectroscopy revealed some evidence of cation disorder, the film prepared at 750°C shows a sharp superconducting transition at 91 K and critical current density of 1.3 MA/cm2 at 77 K. Optimal heat treatment temperature was 750°C in the argon atmosphere, which is consistent with the thermodynamic estimate that heat treatment temperature decreases as oxygen partial pressure decreases.

Identification of W20O58 Phase In CVD Tungsten Films

1989 ◽  
Vol 168 ◽  
Author(s):  
M. Lawrence ◽  
A. Dass ◽  
Siva Sivaram ◽  
Bryan Tracy
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Dissolved Oxygen ◽  
Oxide Phase ◽  
Matrix Phase ◽  
Second Phase ◽  
Two Phase

AbstractThin films of tungsten grown in a CVD reactor by the reduction of hydrogen and silane consisted of a two phase microstructures; a matrix phase of bcc tungsten, and a second phase of W20O58. The second phase is uniformly distributed in the film and does not afeoct 5athe electrical resistivity of hydrogenreduced films (8 μohm-cm). However, dissolved oxygen in the silane-reduced film contributes to the observed higher electrical resistivity (13 μohm-cm) along with smaller grain size. The larger amount of oxide in the hydrogen-reduced film correlates with its slower growth rate when compared to the silane-reduced film which contained a smaller amount of oxide phase.

LiNiO2 Thin Films Fabricated by Diffusion of Li on Ni Tapes

2007 ◽  
Vol 336-338 ◽  
pp. 505-508
Author(s):  
Cheol Jin Kim ◽  
In Sup Ahn ◽  
Kwon Koo Cho ◽  
Sung Gap Lee ◽  
Jun Ki Chung
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Grain Size ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Cold Isostatic Pressing ◽  
Tube Furnace ◽  
Treatment Conditions ◽  
Average Grain Size ◽  
Cold Rolling And Annealing

LiNiO2 thin films for the application of cathode of the rechargeable battery were fabricated by Li ion diffusion on the surface oxidized NiO layer. Bi-axially textured Ni-tapes with 50 ~ 80 μm thickness were fabricated using cold rolling and annealing of Ni-rod prepared by cold isostatic pressing of Ni powder. Surface oxidation of Ni-tapes were conducted using tube furnace or line-focused infrared heater at 700 °C for 150 sec in flowing oxygen atmosphere, resulted in NiO layer with thickness of 400 and 800 μm, respectively. After Li was deposited on the NiO layer by thermal evaporation, LiNiO2 was formed by Li diffusion through the NiO layer during subsequent heat treatment using IR heater with various heat treatment conditions. IR-heating resulted in the smoother surface and finer grain size of NiO and LiNiO2 layer compared to the tube-furnace heating. The average grain size of LiNiO2 layer was 0.5~1 μm, which is much smaller than that of sol-gel processed LiNiO2. The reacted LiNiO2 region showed homogeneous composition throughout the thickness and did not show any noticeable defects frequently found in the solid state reacted LiNiO2, but crack and delamination between the reacted LiNiO2 and Ni occurred as the reaction time increased above 4hrs.

Effect of Nd Content and Heat Treatment on Microstructure and Mechanical Properties of Mg-Zn-Nd Alloy

2017 ◽  
Vol 898 ◽  
pp. 124-130 ◽  
Author(s):  
Shu Min Xu ◽  
Xin Ying Teng ◽  
Xing Jing Ge ◽  
Jin Yang Zhang
Keyword(s):  
Mechanical Properties ◽  
Heat Treatment ◽  
Grain Size ◽  
Tensile Strength ◽  
Ultimate Tensile Strength ◽  
Cast Alloy ◽  
Second Phase ◽  
Casting Method ◽  
Magnesium Matrix ◽  
Microstructure And Mechanical Properties

In this paper, the microstructure and mechanical properties of the as-cast and heat treatment of Mg-Zn-Nd alloy was investigated. The alloy was manufactured by a conventional casting method, and then subjected to a heat treatment. The results showed that the microstructure of as-cast alloy was comprised of α-Mg matrix and Mg12Nd phase. With increase of Nd content, the grain size gradually decreased from 25.38 μm to 9.82 μm. The ultimate tensile strength and elongation at room temperature of the Mg94Zn2Nd4 alloy can be reached to 219.63 MPa and 5.31%. After heat treatment, part of the second phase dissolved into the magnesium matrix and the grain size became a little larger than that of the as-cast. The ultimate tensile strength was declined by about 2.5%, and the elongation was increased to 5.47%.

scholarly journals Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

2017 ◽  
Vol 35 (1) ◽  
pp. 173-180 ◽  
Author(s):  
A. Kavitha ◽  
R. Kannan ◽  
S. Rajashabala
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Dc Magnetron Sputtering ◽  
Target Power ◽  
Reactive Gases ◽  
Hot Filament ◽  
Diode Mode

AbstractThe present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).

Surface Characteristics, Etching Behaviors and Chemicalmechanical Polishing of Aluminum Alloy thin Films

1997 ◽  
Vol 477 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Jun Wu ◽  
Yee-Shyi Chang
Keyword(s):  
Thin Films ◽  
Alloy Composition ◽  
Surface Characteristics ◽  
Corrosion Current ◽  
Native Oxide ◽  
Al Alloy ◽  
Abrasive Particles ◽  
Mechanical Abrasion ◽  
Underlying Mechanisms ◽  
Auxiliary Role

ABSTRACTEtching behaviors of various Al alloy thin films in H2O2-based acidic etchants are investigated in this study. The pH and H2O2 content in the etchant are varied in order to simulate the case where Al thin films are subject to chemical-mechanical polishing (CMP) using slurries of different compositions. Corrosion current and thickness of the native oxide on pure-Al, AI-1%Si, Al-0.5%Cu, AI-1%Si-0.5%Cu, and AI-1%Cu thin films are determined from Tafel and ESCA analyses respectively. Comparisons between etch rate and CMP polish rate data suggest that Al-CMP removal process depends strongly on the chemical reactions by the oxidizer (slurry). Mechanical abrasion by the abrasive particles plays only an auxiliary role during Al CMP. In addition, alloy composition (% Si and % Cu) influence both etching and polishing behaviors to a great extent. The underlying mechanisms for etching and polishing are discussed.

Effect of Heat Treatments on Microstructure and Properties of Hot Compression Aluminum Alloy 7A04

2011 ◽  
Vol 480-481 ◽  
pp. 433-436
Author(s):  
Mu Meng ◽  
Zhi Min Zhang ◽  
Jian Min Yu ◽  
Xin Kai Li
Keyword(s):  
Heat Treatment ◽  
Aluminum Alloy ◽  
Second Phase ◽  
Transgranular Fracture ◽  
High Deformation ◽  
Microstructure And Properties ◽  
T6 Heat Treatment ◽  
Second Phase Particles ◽  
The Matrix ◽  
Fracture Appearance

Aluminum alloy 7A04 compressed at high deformation temperature and large deformation is applied in two different heat treatment (T5 and T6), then microstructure and properties of the alloy after heat treatment are investigated. The mechanical properties are studied by means of the tensile testing and the hardness testing. The microstructure characteristics and the fractorgraphy analysis are respectively investigated with optical microscopy and SEM. The experimental results indicate that after T6 heat treatment, the second-phase particles dispersed in the matrix, which can efficiently improving the strength of the alloy, but reduced the toughness. After T5 heat treatment, the coarse and discontinuous second-phase is distributed along the grain boundary, which can lead to the low strength and high toughness because of the lack of the strengthening phase in the grains. The fracture appearance is intercrystalline fracture after T6 heat treatment, and dimple transgranular fracture after T5 heat treatment.

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