Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
2015 ◽
Vol 821-823
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pp. 500-503
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Keyword(s):
MOS capacitors have been fabricated on (0001), (11-20) and (000-1) oriented 4H-SiC under different post-oxidation anneal (POA) conditions. 100 MHz conductance measurement shows the generation of very fast donor-type interface traps after NO anneal for both Si-face (0001) and a-face (11-20), but not on C-face (000-1). Fast traps were not observed in POCl3annealed samples for any orientation. Smallest Dit(at 0.2 eV below conduction band edge) was obtained on Si-face using POCl3anneal (1.4x1011cm-2eV-1), on a-face using NO anneal (2.5x1011cm-2eV-1) and on C-face using POCl3anneal (4.5x1012cm-2eV-1).
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2008 ◽
Vol 600-603
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pp. 755-758
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2010 ◽
Vol 645-648
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pp. 975-978
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Keyword(s):
2003 ◽
Vol 19
(1)
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pp. 54-60
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2012 ◽
Vol 717-720
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pp. 761-764
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Keyword(s):
Keyword(s):
2011 ◽
Vol 13
(9)
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pp. 3788-3794
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