Structure and Properties of W-Ti Thin Films Deposited by Magnetron Sputtering

2016 ◽  
Vol 849 ◽  
pp. 654-658
Author(s):  
Guo Qi Sun ◽  
Sun Yong ◽  
Yong Hua Duan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Sheet Resistance ◽  
Silicon Substrates ◽  
Structure And Properties ◽  
Dc Magnetron Sputtering ◽  
Polycrystalline Structure ◽  
Columnar Grains ◽  
P Type ◽  
Ti Content

W-Ti thin films with different Ti contents were prepared by dc magnetron sputtering on silicon substrates of p-type (100) orientation, and the pure W and pure Ti thin films with the same thick were also prepared for comparison. The microstructure and properties of W-Ti thin film were characterized by XRD, SEM, AFM, microhardness tester and four-point probe method. The results show that the thin films exhibited a polycrystalline structure in the form of columnar grains, and only b.c.c. W phase could be registered in the films, and with the increase of Ti content, the solid solution of W-Ti was found. Compared to pure W film, the microhardness of W-Ti films decreased with the increasing of Ti content, while the sheet resistance rises with the increasing of Ti content. The microhardness of W-Ti thin films was higher than pure Ti thin films, and the sheet resistance was lower than pure Ti thin films.

AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

2008 ◽  
Vol 22 (14) ◽  
pp. 2275-2283 ◽  
Author(s):  
WEIDONG CHEN ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
JINGQUAN ZHANG ◽  
FEFE YAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Efficiency ◽  
Dark Conductivity ◽  
Aluminum Antimonide ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
P Type ◽  
20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

scholarly journals Characterization of Ag-Doped p-Type SnO Thin Films Prepared by DC Magnetron Sputtering

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Hoai Phuong Pham ◽  
Thanh Giang Le Thuy ◽  
Quang Trung Tran ◽  
Hoang Hung Nguyen ◽  
Huynh Tran My Hoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Carrier Scattering ◽  
Semiconductor Behavior ◽  
Type Semiconductor ◽  
Diffraction Patterns ◽  
P Type ◽  
Tin Monoxide

Crystalline structure and optoelectrical properties of silver-doped tin monoxide thin films with different dopant concentrations prepared by DC magnetron sputtering are investigated. The X-ray diffraction patterns reveal that the tetragonal SnO phase exhibits preferred orientations along (101) and (110) planes. Our results indicate that replacing Sn2+ in the SnO lattice with Ag+ ions produces smaller-sized crystallites, which may lead to enhanced carrier scattering at grain boundaries. This causes a deterioration in the carrier mobility, even though the carrier concentration improves by two orders of magnitude due to doping. In addition, the Ag-doped SnO thin films show a p-type semiconductor behavior, with a direct optical gap and decreasing transmittance with increasing Ag dopant concentration.

scholarly journals The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Huu Phuc Dang ◽  
Quang Ho Luc ◽  
Tran Le ◽  
Van Hieu Le
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
X Ray ◽  
P Type ◽  
Deposited Films

Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2+ Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

Effects of substrate temperature on characteristics of the p-type Ag-doped SnOx thin films prepared by reactive DC magnetron sputtering

2020 ◽  
Vol 388 ◽  
pp. 112157
Author(s):  
Hoai Phuong Pham ◽  
Thi Hai Yen Nguyen ◽  
An Hoang-Thuy Nguyen ◽  
Ngoc Thuy Vo ◽  
Thanh Giang Le Thuy ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Dc Magnetron Sputtering ◽  
P Type

Composition-dependent structural and electrical properties of p-type SnOx thin films prepared by reactive DC magnetron sputtering: effects of oxygen pressure and heat treatment

RSC Advances ◽  
2016 ◽  
Vol 6 (75) ◽  
pp. 71757-71766 ◽  
Author(s):  
Sang Jin Han ◽  
Sungmin Kim ◽  
Joongyu Ahn ◽  
Jae Kyeong Jeong ◽  
Hoichang Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Post Heat Treatment ◽  
Dc Sputtering ◽  
Partial Pressures ◽  
Structural And Electrical Properties ◽  
P Type

The composition-dependent structural and electrical properties of p-type SnOx films prepared by reactive DC sputtering at various oxygen partial pressures (PO) and post-heat treatment temperatures (TA) were investigated.

scholarly journals Fabricating and investigating the influence of the temperature on electrical and optical properties of the p-type SnO2:Ga (GTO) thin films prepared by DC magnetron sputtering

2016 ◽  
Vol 19 (4) ◽  
pp. 137-146
Author(s):  
Phuc Huu Dang ◽  
Nhan Van Pham ◽  
Hieu Van Le ◽  
Tran Le
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
Ar Gas ◽  
Optimum Annealing Temperature ◽  
Quartz Glasses ◽  
P Type ◽  
Deposited Films

Transparent Ga-doped tin oxide (GTO) thin films were fabricated on quartz glasses from (SnO2 + Ga2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar gas at the pressure of 4.10-3torr. X ray diffraction (XRD), Hall - effect and UV-vis spectra measurements were performed to characterize the deposited films. Films were deposited directly with different temperatures in order to investigate the influence of temperature on their electrical and optical propertises. After that GTO films were deposited at 400 oC and then were annealed in Ar gas at different temperature in order to eliminate acceptor and donor compensation. Deposited films showed p-type electrical property, polycrystalline tetragonal rutile structure and their average transmittance above 80 % in visible light range at the optimum annealing temperature of 550 oC. In addition, p-type conductivity was also confirm by the non-linear characteristics of a p-type GTO/n Si. The best electrical properties of film were obtained on 15 % wt Ga2O3-doped SnO2 target with its resistivity, hole concentration and Hall mobility were 0,63 .cm, 3,3.1018 cm-3 and 3,01 cm2V-1s-1, respectively.

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