Fabricating and investigating the influence of the temperature on electrical and optical properties of the p-type SnO2:Ga (GTO) thin films prepared by DC magnetron sputtering

Transparent Ga-doped tin oxide (GTO) thin films were fabricated on quartz glasses from (SnO2 + Ga2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar gas at the pressure of 4.10-3torr. X ray diffraction (XRD), Hall - effect and UV-vis spectra measurements were performed to characterize the deposited films. Films were deposited directly with different temperatures in order to investigate the influence of temperature on their electrical and optical propertises. After that GTO films were deposited at 400 oC and then were annealed in Ar gas at different temperature in order to eliminate acceptor and donor compensation. Deposited films showed p-type electrical property, polycrystalline tetragonal rutile structure and their average transmittance above 80 % in visible light range at the optimum annealing temperature of 550 oC. In addition, p-type conductivity was also confirm by the non-linear characteristics of a p-type GTO/n Si. The best electrical properties of film were obtained on 15 % wt Ga2O3-doped SnO2 target with its resistivity, hole concentration and Hall mobility were 0,63 .cm, 3,3.1018 cm-3 and 3,01 cm2V-1s-1, respectively.

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The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

Journal of Nanomaterials ◽

10.1155/2016/7825456 ◽

2016 ◽

Vol 2016 ◽

pp. 1-11 ◽

Cited By ~ 3

Author(s):

Huu Phuc Dang ◽

Quang Ho Luc ◽

Tran Le ◽

Van Hieu Le

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Tin Oxide ◽

Hole Concentration ◽

Dc Magnetron Sputtering ◽

Rutile Structure ◽

X Ray ◽

P Type ◽

Deposited Films

Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2+ Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

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Studying and fabricating p - type transparent conducting antimony - doped SnO2 thin films by magnetron sputtering

Science and Technology Development Journal ◽

10.32508/stdj.v18i1.1031 ◽

2015 ◽

Vol 18 (1) ◽

pp. 23-33

Author(s):

Phuc Huu Dang ◽

Duan Van Nguyen ◽

Vu Si Hoai Nguyen ◽

Hieu Van Le ◽

Tran Le

Keyword(s):

Magnetron Sputtering ◽

Hole Concentration ◽

The Other ◽

Working Pressure ◽

Rutile Structure ◽

Different Temperatures ◽

Ambient Gas ◽

Optimum Annealing Temperature ◽

P Type ◽

Deposited Films

Sb doped tin oxide films (ATO) were fabricated on Quart glasses from (SnO2 + Sb2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar ambient gas at working pressure of 2.10-3 torr. X ray diffraction (XRD), Hall - effect measurements and UV-vis spectra were performed to characterize the deposited films. The substrate temperature of films was investigated for two ways. Films were annealed in Ar ambient gas after deposited at room temperature in one way. They were deposited directly with different temperatures in the other. It is found that the fabricated of ATO films in the first way was easier than the other. Deposited films showed p type electrical property, polycrystalline tetragonal rutile structure and their average transmittance was above 80 % in visible light range at the optimum annealing temperature of 500oC. The best electrical properties of film were obtained on 10 %wt Sb2O3 doped SnO2 target with its resistivity, hole concentration and Hall mobility are 0.55 Ω.cm, 1.2.1019 cm-3 and 0.54 cm2V-1s-1, respectively.

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AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

International Journal of Modern Physics B ◽

10.1142/s0217979208039447 ◽

2008 ◽

Vol 22 (14) ◽

pp. 2275-2283 ◽

Cited By ~ 10

Author(s):

WEIDONG CHEN ◽

LIANGHUAN FENG ◽

ZHI LEI ◽

JINGQUAN ZHANG ◽

FEFE YAO ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

High Efficiency ◽

Dark Conductivity ◽

Aluminum Antimonide ◽

Dc Magnetron Sputtering ◽

Glass Substrates ◽

Average Grain Size ◽

P Type ◽

20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

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Characterization of Ag-Doped p-Type SnO Thin Films Prepared by DC Magnetron Sputtering

Journal of Nanomaterials ◽

10.1155/2017/8360823 ◽

2017 ◽

Vol 2017 ◽

pp. 1-6 ◽

Cited By ~ 3

Author(s):

Hoai Phuong Pham ◽

Thanh Giang Le Thuy ◽

Quang Trung Tran ◽

Hoang Hung Nguyen ◽

Huynh Tran My Hoa ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

Carrier Scattering ◽

Semiconductor Behavior ◽

Type Semiconductor ◽

Diffraction Patterns ◽

P Type ◽

Tin Monoxide

Crystalline structure and optoelectrical properties of silver-doped tin monoxide thin films with different dopant concentrations prepared by DC magnetron sputtering are investigated. The X-ray diffraction patterns reveal that the tetragonal SnO phase exhibits preferred orientations along (101) and (110) planes. Our results indicate that replacing Sn2+ in the SnO lattice with Ag+ ions produces smaller-sized crystallites, which may lead to enhanced carrier scattering at grain boundaries. This causes a deterioration in the carrier mobility, even though the carrier concentration improves by two orders of magnitude due to doping. In addition, the Ag-doped SnO thin films show a p-type semiconductor behavior, with a direct optical gap and decreasing transmittance with increasing Ag dopant concentration.

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Effects of substrate temperature on characteristics of the p-type Ag-doped SnOx thin films prepared by reactive DC magnetron sputtering

Journal of Photochemistry and Photobiology A Chemistry ◽

10.1016/j.jphotochem.2019.112157 ◽

2020 ◽

Vol 388 ◽

pp. 112157

Author(s):

Hoai Phuong Pham ◽

Thi Hai Yen Nguyen ◽

An Hoang-Thuy Nguyen ◽

Ngoc Thuy Vo ◽

Thanh Giang Le Thuy ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Dc Magnetron Sputtering ◽

P Type

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In SituandEx SituStudies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells

International Journal of Photoenergy ◽

10.1155/2012/723714 ◽

2012 ◽

Vol 2012 ◽

pp. 1-7 ◽

Cited By ~ 27

Author(s):

K. Aryal ◽

H. Khatri ◽

R. W. Collins ◽

S. Marsillac

Keyword(s):

Thin Films ◽

Solar Cells ◽

Magnetron Sputtering ◽

Layer Thickness ◽

Compressive Strain ◽

Back Contact ◽

Dc Magnetron Sputtering ◽

Bulk Layer ◽

Cigs Solar Cells ◽

Deposited Films

Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized byin situand real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then extracted as a function of bulk layer thickness for rf and dc films by fitting each dielectric function to a Drude free-electron model combined with a broad Lorentz oscillator. The values were fitted to a conical growth mode and demonstrated that the rf-deposited films have already smaller grains than the dc films when the bulk layer thickness is 30 nm.

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THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB6 FILM'S CHARACTERISTICS

Modern Physics Letters B ◽

10.1142/s0217984909019077 ◽

2009 ◽

Vol 23 (08) ◽

pp. 1077-1083 ◽

Cited By ~ 3

Author(s):

JING XU ◽

GUANGHUI MIN ◽

XIAOHUA ZHAO ◽

LIJIE HU ◽

HUASHUN YU

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Magnetron Sputtering ◽

Bias Voltage ◽

Diffraction Peak ◽

Dc Magnetron Sputtering ◽

Crystal Face ◽

Deposited Films ◽

Stylus Profiler ◽

Lanthanum Boride

The deposition of lanthanum boride ( LaB 6) thin films by the DC magnetron sputtering were studied. XRD, AFM and Stylus Profiler were used to characterize the properties of the deposited films. The XRD was used to study the crystallinity. The results of the XRD showed that the dominant crystal face is the (100) face. The crystallinity decreased with the increased bias-voltage value, but the influence of bias-voltage on the films is different on different crystal faces. The intensity (100) face was influenced by the bias-voltage more obviously than other faces except the influence of thickness. The diffraction peak maximal intensity of the (100) face changed from 1256 (on 0 V) to 580 (on -150 V), but the intensity of (110) face changed from 614 (on 0 V) to 486 (on -150 V). The rel. int (100%) of the (110) face changed from 38.70 to 74.52. The deposition rate decreased with the increased bias-voltage value, but the decrease was not obvious. The maximum and minimum of the deposition ratio were 17.53 nm and 13.75 nm respectively. Surface morphology of the films was studied by the AFM. The crystallite of the films was less than 50 nm. The maximal roughness of the films decreased first and increased afterward, and the maximum was obtained on the -50 V bias-voltage.

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Composition-dependent structural and electrical properties of p-type SnOx thin films prepared by reactive DC magnetron sputtering: effects of oxygen pressure and heat treatment

RSC Advances ◽

10.1039/c6ra08726d ◽

2016 ◽

Vol 6 (75) ◽

pp. 71757-71766 ◽

Cited By ~ 13

Author(s):

Sang Jin Han ◽

Sungmin Kim ◽

Joongyu Ahn ◽

Jae Kyeong Jeong ◽

Hoichang Yang ◽

...

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Dc Magnetron Sputtering ◽

Post Heat Treatment ◽

Dc Sputtering ◽

Partial Pressures ◽

Structural And Electrical Properties ◽

P Type

The composition-dependent structural and electrical properties of p-type SnOx films prepared by reactive DC sputtering at various oxygen partial pressures (PO) and post-heat treatment temperatures (TA) were investigated.

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