Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
2016 ◽
Vol 858
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pp. 61-64
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Keyword(s):
This paper investigates the quality of 4H-SiC crystals grown at a very fast growth rate (> 2.5 mm/h) using a high-temperature gas source method. Differences in nitrogen doping efficiency were clarified in facet and step-flow regions. In case for growth in the macro-step bunching mode, doping fluctuation and void formation were observed in the macro-step bunching region. Propagation of threading screw dislocations (TSDs) in the grown crystal was also investigated by synchrotron X-ray topography.
2016 ◽
Vol 858
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pp. 29-32
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Keyword(s):
2014 ◽
Vol 778-780
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pp. 59-62
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Keyword(s):
Keyword(s):
2014 ◽
Vol 778-780
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pp. 51-54
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Keyword(s):
Keyword(s):
1997 ◽
Vol 34
(3)
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pp. 325-333
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