High-speed, high-quality crystal growth of 4H-SiC by high-temperature gas source method

2014 ◽  
Vol 7 (6) ◽  
pp. 065502 ◽  
Author(s):  
Norihiro Hoshino ◽  
Isaho Kamata ◽  
Yuichiro Tokuda ◽  
Emi Makino ◽  
Naohiro Sugiyama ◽  
...  
Keyword(s):  
Crystal Growth ◽  
High Temperature ◽  
High Speed ◽  
High Quality ◽  
Source Method ◽  
Gas Source ◽  
High Temperature Gas

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method

2014 ◽  
Vol 778-780 ◽  
pp. 59-62 ◽  
Author(s):  
Isaho Kamata ◽  
Norihiro Hoshino ◽  
Yuichiro Tokuda ◽  
Emi Makino ◽  
Jun Kojima ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
High Temperature ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Source Method ◽  
Gas Source ◽  
Fast Growth Rate ◽  
High Temperature Gas

This paper reports on evidence of high-quality and very fast 4H-SiC crystal growth achieved using a high-temperature gas source method. The formation of threading screw dislocations (TSDs) during crystal growth was examined by comparing synchrotron X-ray topography images taken for a seed and grown crystals, while the generation of a high density of new TSDs is observed under improper growth condition. High-quality crystal growth retaining the TSD density of the seed crystal was accomplished under an improved condition, even for a very high growth rate of 2.1 mm/h.

High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method

2015 ◽  
Vol 821-823 ◽  
pp. 104-107 ◽  
Author(s):  
Jun Kojima ◽  
Emi Makino ◽  
Yuichiro Tokuda ◽  
Naohiro Sugiyama ◽  
Notihiro Hoshino ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
High Temperature ◽  
High Speed ◽  
Gas Flow ◽  
Flow Ratio ◽  
Source Method ◽  
Gas Source ◽  
Gas Flow Ratio ◽  
High Temperature Gas

This article gives the results of crystal growth by a High-Temperature Gas Source Method such as HTCVD. It was reported that clusters were formed and were an important factor of the growth in HTCVDs, and some influences of them were investigated. The difference between the model with and without clustering was compared. The experimental growth rates corresponded to the cluster model, and this indicated that clusters affect the crystal growth. Relations between the experimental growth rate and the growth temperature as a function of gas flow ratio were investigated. The gas flow ratio was defined: (SiH4+C3H8) / (SiH4+C3H8+H2). Maximum growth rate was 2.3mm/h under high source gas ratio. At present, a Φ75mm×54mm sized ingot has been developed.

Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method

2020 ◽  
Vol 1004 ◽  
pp. 5-13
Author(s):  
Yuichiro Tokuda ◽  
Norihiro Hoshino ◽  
Hironari Kuno ◽  
Hideyuki Uehigashi ◽  
Takeshi Okamoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
High Temperature ◽  
Gas Flow ◽  
Fast Growth ◽  
Process Conditions ◽  
Bulk Growth ◽  
Source Method ◽  
Gas Source ◽  
High Temperature Gas

The process conditions for fast growth of 4 in. 4H-polytype SiC (4H-SiC) single crystals were studied for high-temperature gas source method. Prior to experiments, crystal growth simulations were conducted to investigate the influence of vertical gas-flow velocity on the radial distribution of the growth rate. Crystal growth experiments were performed using the crucibles designed for 4 in. crystal growth following the simulation studies. By investigating growth rate as functions of the input partial pressure of source gases and temperatures of growing surfaces, expressions for the growth rate of 4-in. crystals were derived. We also clarified the optimal conditions for single-crystal growth. Finally, fast growth of 4 in. 4H-SiC crystals with uniform shape was demonstrated.

Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method

2014 ◽  
Vol 778-780 ◽  
pp. 55-58 ◽  
Author(s):  
Norihiro Hoshino ◽  
Isaho Kamata ◽  
Yuichiro Tokuda ◽  
Emi Makino ◽  
Jun Kojima ◽  
...  
Keyword(s):  
Crystal Growth ◽  
High Temperature ◽  
Growth Rates ◽  
Gas Flow ◽  
Computational Simulation ◽  
Experimental Studies ◽  
High Growth ◽  
Source Method ◽  
Gas Source ◽  
High Temperature Gas

Possibilities of very fast 4H-SiC crystal growth using a high-temperature gas source method are surveyed by computational simulation and experimental studies. The temperature range suitable to obtain high growth rates are investigated by simulating temperature dependences of growth rates for H2+SiH4+C3H8 and H2 +SiH4+C3H8+HCl gas systems. Simulation and experimental results demonstrate that an increase in source gas flow rates as well as gas-flow velocities enhance growth rates. High growth rates exceeding 1 mm/h are experimentally obtained using both gas systems. Single crystal growth on a 3-inch diameter seed crystal is also demonstrated.

4H-SiC Bulk Growth Using High-Temperature Gas Source Method

2014 ◽  
Vol 778-780 ◽  
pp. 51-54 ◽  
Author(s):  
Yuichiro Tokuda ◽  
Jun Kojima ◽  
Kazukuni Hara ◽  
Hidekazu Tsuchida ◽  
Shoichi Onda
Keyword(s):  
High Temperature ◽  
Temperature Gradient ◽  
High Speed ◽  
Optimal Growth ◽  
Growth Conditions ◽  
High Temperature Gradient ◽  
Bulk Growth ◽  
Source Method ◽  
Gas Source ◽  
High Temperature Gas

Our latest results of SiC bulk growth by High-Temperature Gas Source Method　are given in this paper. Based on Mullins-Sekerka instability, optimal growth conditions to preclude dendrite crystals, which are one of the pending issues for high-speed bulk growth, was studied. First, the simulation studies showed that high temperature gradient in a growing crystal is required for high-speed bulk growth without dendrite crystals. Second, high-speed bulk growth was demonstrated under high temperature gradient.

Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method

2016 ◽  
Vol 858 ◽  
pp. 29-32 ◽  
Author(s):  
Norihiro Hoshino ◽  
Isaho Kamata ◽  
Yuichiro Tokuda ◽  
Emi Makino ◽  
Naohiro Sugiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Void Formation ◽  
Fast Growth ◽  
Spiral Growth ◽  
High Concentration ◽  
Trade Off ◽  
Step Bunching ◽  
Source Method ◽  
Gas Source ◽  
High Temperature Gas

Limitations in the very fast growth of 4H-SiC crystals are surveyed for a high-temperature gas source method. The evolution of macro-step bunching and void formation in crystal growth is investigated by changing the partial pressures of the source gases and crystal rotation speeds. The variation in macro-step formation depending on radial positions, where step-flow or spiral growth governs, of a grown crystal is also revealed. Based on the relation between growth conditions and macro-step bunching, a trade-off between growth rate enhancement and crystal quality and a method to improve such trade-off are discussed. Nitrogen at a high concentration under very high growth rates in the high-temperature gas source method is also investigated.

Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method

2016 ◽  
Vol 858 ◽  
pp. 61-64 ◽  
Author(s):  
Isaho Kamata ◽  
Norihiro Hoshino ◽  
Yuichiro Tokuda ◽  
Emi Makino ◽  
Naohiro Sugiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Defect Formation ◽  
Void Formation ◽  
Step Bunching ◽  
Step Flow ◽  
Source Method ◽  
Gas Source ◽  
Fast Growth Rate ◽  
High Temperature Gas

This paper investigates the quality of 4H-SiC crystals grown at a very fast growth rate (> 2.5 mm/h) using a high-temperature gas source method. Differences in nitrogen doping efficiency were clarified in facet and step-flow regions. In case for growth in the macro-step bunching mode, doping fluctuation and void formation were observed in the macro-step bunching region. Propagation of threading screw dislocations (TSDs) in the grown crystal was also investigated by synchrotron X-ray topography.

Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method

2020 ◽  
Vol 13 (9) ◽  
pp. 095502
Author(s):  
Norihiro Hoshino ◽  
Isaho Kamata ◽  
Takahiro Kanda ◽  
Yuichiro Tokuda ◽  
Hironari Kuno ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
High Growth ◽  
High Growth Rate ◽  
Bulk Crystal ◽  
Source Method ◽  
Gas Source ◽  
Dislocation Densities ◽  
High Temperature Gas

X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method

2018 ◽  
Vol 924 ◽  
pp. 180-183
Author(s):  
Isaho Kamata ◽  
Norihiro Hoshino ◽  
Yuichiro Tokuda ◽  
Emi Makino ◽  
Takahiro Kanda ◽  
...  
Keyword(s):  
High Temperature ◽  
Growth Direction ◽  
Cross Sectional ◽  
X Ray ◽  
Source Method ◽  
Propagation Behavior ◽  
Gas Source ◽  
Topography Analysis ◽  
Edge Dislocations ◽  
High Temperature Gas

Synchrotron X-ray topography was carried out for 4H-SiC crystals grown by high-temperature gas source method, and transmission topography analysis with g= or 0004 was carried out for the cross-sectional samples. Dislocation contrasts extended in the growth direction were observed and the propagation behavior of threading screw dislocations (TSDs), threading edge dislocations (TEDs), basal plane dislocations (BPDs) and stacking faults (SFs) in the facet and step-flow regions were discussed. The propagation of dislocations in the fast grown crystal with a growth rate of 3.1mm/h was also evaluated by cross-sectional topography.

Comparative Study of GaN Growth Process by MOVPE

1999 ◽  
Vol 572 ◽  
Author(s):  
Jingxi Sun ◽  
J. M. Redwing ◽  
T. F. Kuech
Keyword(s):  
High Temperature ◽  
Comparative Study ◽  
Gas Phase ◽  
Residence Time ◽  
Gas Flow ◽  
Flow Sheet ◽  
Flow Zone ◽  
High Quality ◽  
Phase Temperature ◽  
High Temperature Gas

ABSTRACTA comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. Our study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

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