Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method
2014 ◽
Vol 778-780
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pp. 59-62
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This paper reports on evidence of high-quality and very fast 4H-SiC crystal growth achieved using a high-temperature gas source method. The formation of threading screw dislocations (TSDs) during crystal growth was examined by comparing synchrotron X-ray topography images taken for a seed and grown crystals, while the generation of a high density of new TSDs is observed under improper growth condition. High-quality crystal growth retaining the TSD density of the seed crystal was accomplished under an improved condition, even for a very high growth rate of 2.1 mm/h.
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2016 ◽
Vol 858
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pp. 61-64
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2006 ◽
Vol 3
(6)
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pp. 1617-1619
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2020 ◽
Vol 22
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pp. 100816
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2000 ◽
Vol 9
(9-10)
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pp. 1673-1677
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Keyword(s):
2016 ◽
Vol 858
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pp. 29-32
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