Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

2016 ◽  
Vol 858 ◽  
pp. 89-92 ◽  
Author(s):  
Philipp Schuh ◽  
Philipp Vecera ◽  
Andreas Hirsch ◽  
Mikael Syväjärvi ◽  
Grazia Litrico ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Growth ◽  
Nitric Acid ◽  
Optical Microscopy ◽  
Hydrogen Fluoride ◽  
High Quality ◽  
Bulk Crystal Growth ◽  
Vapor Growth ◽  
Seeding Material ◽  
Related Technique

We have developed and investigated the quasi-bulk crystal growth of 3C-SiC on transferred, high quality, CVD-grown templates using a sublimation sandwich related technique. The seeding layers were removed from the silicon carrier using a solution of hydrogen fluoride, nitric acid and water and glued to a substrate using carbon glue. The transferred layers were used as seeding material to grow high quality, single crystalline, DPBs free 3C-SiC crystals with thicknesses of up to 860 μm and a size of 18 x 20 mm. Analysis of the 3C-SiC layers was carried out using Laue measurement in back-reflecting geometry, Raman spectroscopy and optical microscopy.

scholarly journals Bulk crystal growth and characterization of the bismuth ferrite-based material Bi3FeO4(MoO4)2

CrystEngComm ◽  
2019 ◽  
Vol 21 (15) ◽  
pp. 2508-2516 ◽  
Author(s):  
Conggang Li ◽  
Zeliang Gao ◽  
Xiangxin Tian ◽  
Junjie Zhang ◽  
Dianxing Ju ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Bismuth Ferrite ◽  
Bulk Crystal ◽  
High Quality ◽  
Bulk Crystal Growth ◽  
Polarized Raman

The large, high-quality Bi3FeO4(MoO4)2 single crystals of size up to 28 × 20 × 12 mm3 were grown successfully by the TSSG method. The thermal, optical, magnetization, and polarized Raman properties are investigated in detail.

Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

2013 ◽  
Vol 740-742 ◽  
pp. 311-314 ◽  
Author(s):  
Kazuaki Seki ◽  
S. Harada ◽  
Toru Ujihara
Keyword(s):  
Crystal Growth ◽  
Growth Rates ◽  
Solution Growth ◽  
High Quality ◽  
Preferential Growth ◽  
Bulk Crystal Growth ◽  
Seed Crystals ◽  
Growth Method ◽  
The Difference ◽  
Top Seeded Solution Growth

In this paper, we review our researches on the high-quality 3C-SiC bulk crystal growth. The polytype control and the suppression of defects are essential in the growth 3C-SiC on hexagonal SiC seed crystals. The growth polytype of SiC is usually controlled by the inheritance of the seed crystal. In contrast, we established kinetic polytype control in which the preferential growth of 3C-SiC can be achieved by the difference in the growth rates depending on supersaturation for the polytypes. In the growth of 3C-SiC, double positioning boundaries (DPBs) are often formed by the existence of twinned domain. The elimination of DPBs can be achieved utilizing the anisotropy of the step advance velocity.

Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals

2005 ◽  
Vol 483-485 ◽  
pp. 43-46 ◽  
Author(s):  
Soo Hyung Seo ◽  
Joon Suk Song ◽  
Myung Hwan Oh ◽  
Yen Zen Wang
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Growth ◽  
Optical Microscopy ◽  
Single Crystals ◽  
Local Variation ◽  
Experimental Results ◽  
Central Position ◽  
Polarized Optical Microscopy ◽  
Micro Raman Spectroscopy ◽  
Sublimation Method

We present experimental results with regard to the evaluation of growth-induced polytype domains in 6H-SiC crystals grown by sublimation method and these domains are characterized by using the polarized optical microscopy and micro-Raman spectroscopy. The polytype domains of reverse triangular are generated by local variation of temperature along cdirection and spread-wing shapes normally occurred forming micropipes in many cases. These polytype domains may be generated due to the local variation of supersaturation and/or temperature at central position during crystal growth. In this work, we try to elucidate the origin and mechanism responsible for growth-induced polytype domains.

Development of RAF Quality 150mm 4H-SiC Wafer

2014 ◽  
Vol 778-780 ◽  
pp. 17-21 ◽  
Author(s):  
Hiroyuki Kondo ◽  
Hidetaka Takaba ◽  
Masanori Yamada ◽  
Yasushi Urakami ◽  
Takeshi Okamoto ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Quality Evaluation ◽  
Bulk Crystal ◽  
High Quality ◽  
Bulk Crystal Growth ◽  
Growth Method ◽  
Sic Wafer ◽  
Growth Technology

We have developed RAF (Repeated a-face) growth method which is high quality bulk crystal growth technology [1, 2]. A block crystal more than 150 mm square size was produced by the RAF growth method. Since c-face growth crystal was produced on the seed obtained from the block crystal, high quality 150mm 4H-SiC wafer was achieved. This paper reports the results of the quality evaluation.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

In Situ Raman Spectroscopy Studies on La2CaB10O19 Crystal Growth

2020 ◽  
Vol 20 (10) ◽  
pp. 6604-6609
Author(s):  
Shanshan Liu ◽  
Guochun Zhang ◽  
Kai Feng ◽  
Yanyang Han ◽  
Tao He ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Growth ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
Spectroscopy Studies

scholarly journals Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
High Performance ◽  
Group Iv ◽  
X Ray Diffraction ◽  
High Quality ◽  
Practical Applications ◽  
Large Size ◽  
Growth Method ◽  
Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

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