The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal

2018 ◽  
Vol 924 ◽  
pp. 27-30
Author(s):  
Su Hun Choi ◽  
Young Gon Kim ◽  
Yun Ji Shin ◽  
Seong Min Jeong ◽  
Myung Hyun Lee ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Growth Rate ◽  
Temperature Distribution ◽  
Optical Microscopy ◽  
Single Crystals ◽  
Carbon Concentration ◽  
Graphite Crucible ◽  
Solution Growth ◽  
Metal Addition ◽  
Top Seeded Solution Growth

The crucible design having a stepped wall was introduced for increasing the growth rate of SiC crystal without metal addition in top-seeded solution growth (TSSG) method. The numerical simulation confirmed that new crucible design to increase the solvent-crucible interface could definitely change the temperature distribution and increase the carbon concentration. The simulation result, SiC single crystals were grown with Si solvent at 1900°C using a normal crucible and a stepped crucible to investigate the effect of crucible design having a stepped wall. Grown SiC layers were analyzed using Optical microscopy and Raman spectra. The growth rate in the stepped crucible was finally 66um/h observed.

Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC

2014 ◽  
Vol 778-780 ◽  
pp. 63-66 ◽  
Author(s):  
Tomonori Umezaki ◽  
Daiki Koike ◽  
Atsushi Horio ◽  
S. Harada ◽  
Toru Ujihara
Keyword(s):  
Numerical Simulation ◽  
Growth Rate ◽  
Carbon Concentration ◽  
Concentration Gradient ◽  
High Speed ◽  
Rotation Speed ◽  
Seed Crystal ◽  
Solution Growth ◽  
Growth Interface ◽  
Wide Range

We studied the effect of rotation speed of seed crystal on the growth rate during the solution growth of SiC. The growth rate increased with increasing rotation speed of the seed crystal. The increase in the growth rate was observed in relatively wide range of carbon concentration. According to the numerical simulation, the carbon concentration gradient near the growth interface under 150 rpm condition is larger than 20 rpm (ACRT) condition. This indicates that increase in the growth rate is caused by the increase in the carbon concentration gradient of the diffusion layer.

scholarly journals Relaxor-based ferroelectric single crystals grown by top-seeded solution growth method

2017 ◽  
Vol 47 (11) ◽  
pp. 1126-1138
Author(s):  
Chao HE ◽  
ZuJian WANG ◽  
XiaoMing YANG ◽  
XiFa LONG
Keyword(s):  
Single Crystals ◽  
Solution Growth ◽  
Growth Method ◽  
Top Seeded Solution Growth

scholarly journals Influence of Ta5+ content on the crystallographic structure and electrical properties of [001]PC-oriented (Li,Na,K)(Nb,Ta)O3 single crystals

CrystEngComm ◽  
2016 ◽  
Vol 18 (12) ◽  
pp. 2081-2088 ◽  
Author(s):  
Hairui Liu ◽  
Philippe Veber ◽  
Jurij Koruza ◽  
Daniel Rytz ◽  
Michael Josse ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Perovskite Structure ◽  
Solution Growth ◽  
Lead Free ◽  
Crystallographic Structure ◽  
Growth Method ◽  
Top Seeded Solution Growth

A series of centimeter-sized lead-free piezoelectric Li+- and Ta5+-modified (Na,K)NbO3 single crystals with an ABO3 perovskite structure was successfully grown by the top-seeded solution growth method.

Top-seeded solution growth of Ca-doped YBCO single crystals

2002 ◽  
Vol 237-239 ◽  
pp. 778-782 ◽  
Author(s):  
C.T. Lin ◽  
B. Liang ◽  
H.C. Chen
Keyword(s):  
Single Crystals ◽  
Solution Growth ◽  
Top Seeded Solution Growth

Growth of Large Diameter 4H-SiC by TSSG Technique

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  
Keyword(s):  
Growth Rate ◽  
Fluid Flow ◽  
Single Crystal ◽  
Large Diameter ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Morphological Stability ◽  
Control Member ◽  
Top Seeded Solution Growth

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability

Growth and characterization of ternary BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 ferroelectric single crystals with high Curie temperature

CrystEngComm ◽  
2020 ◽  
Vol 22 (27) ◽  
pp. 4544-4551
Author(s):  
Zeng Luo ◽  
Jian Zhuang ◽  
Zenghui Liu ◽  
Nan Zhang ◽  
Wei Ren ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Single Crystals ◽  
Solution Growth ◽  
High Curie Temperature ◽  
High Quality ◽  
Domain Structures ◽  
Growth Method ◽  
Top Seeded Solution Growth

BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 single crystals with high quality have been successfully grown by the top-seeded solution growth method and the single ferroelastic domain structures and ferroelectric behaviors have also been reviewed.

Top-Seeded Solution Growth and Properties of High TC Pb(In1/2Nb1/2)O3–Pb(Zn 1/3Nb2/3O3–PbTiO3 Single Crystals

2013 ◽  
Vol 5 (9) ◽  
pp. 1271-1274 ◽  
Author(s):  
Tao Li ◽  
Hamel Tailor ◽  
Xiuzhi Li ◽  
Zujian Wang ◽  
Ying Liu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Solution Growth ◽  
Top Seeded Solution Growth
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