Influence of Initiation Site and Lamellar Divergency on the Overall Kinetics of Cellular Growth and Coarsening in Aged U-Nb Alloys

2018 ◽  
Vol 941 ◽  
pp. 863-868
Author(s):  
Robert E. Hackenberg ◽  
Megan G. Emigh ◽  
Pallas A. Papin ◽  
Ann M. Kelly ◽  
Robert T. Forsyth ◽  
...  
Keyword(s):  
Growth Rate ◽  
Initiation Site ◽  
Nucleation Site ◽  
Cellular Growth ◽  
Constant Growth Rate ◽  
Rate Behavior ◽  
Apparent Activation Energies ◽  
Aging Kinetics ◽  
Kinetics Of ◽  
Overall Kinetics

Overall kinetics of lamellar overaging reactions in U-5.5Nb and U-7.5Nb were analyzed by Avrami-Arrhenius analyses of volume fractions measured from an extensive temperature-time (T-t) matrix of specimens. The cellular initiation site (grain boundaries, inclusions) and regimes of lamellar divergency-cum-slowing growth rate were explicitly accounted for. Avrami exponents n from T-t regimes of constant-growth rate were consistent with theory (1<n<3); those from divergent T-t regimes were smaller, n~0.7, which is not surprising given their different growth rate behavior. The apparent activation energies Q were similar for grain-boundary and inclusion-nucleated discontinuous precipitation, indicating that their nucleation site does not alter their overall kinetics. Avrami Analysis of Isothermal Aging Kinetics

Comparison of Nodular Efficiencies Between Partridge Pea and Soybean Using Acetylene Reduction

HortScience ◽  
1998 ◽  
Vol 33 (3) ◽  
pp. 449f-450
Author(s):  
Lisa M. Barry ◽  
Michael N. Dana
Keyword(s):  
Growth Rate ◽  
Plant Size ◽  
Silica Sand ◽  
Soybean Plant ◽  
Fibrous Root ◽  
Constant Growth Rate ◽  
Soil Microbial ◽  
Soybean Plants ◽  
Nurse Crops ◽  
Partridge Pea

Legumes are grown as nurse crops in agriculture because they increase soil microbial life and productivity. Native legumes have potential in ecological restoration to mimic the benefits found in agriculture plus they enhance the restored ecosystem. This study was initiated to compare the growth rates, nodulation characteristics, and nitrogen fixation rates of a native versus a non-native legume. The two legumes were partridge pea (Cassia fasciculata); a native, wild, annual legume and soybean (Glycine max `Century Yellow); a domesticated, agricultural, annual legume native to Asia. Plants were grown for 11 weeks in pots containing silica sand and received a nitrogen-free Hoagland's nutrient solution. Beginning at week 12, plants were harvested weekly for four consecutive weeks. Nodulated root systems were exposed to acetylene gas and the resulting ethylene amounts were measured. The two legumes exhibited significant differences in nodule size and shape and plant growth rate. In soybean, nodules were large, spherical, and clustered around the taproot while in partridge pea, nodules were small, irregularly shaped, and spread throughout the fibrous root system. Soybean plants had a significantly faster growth rate at the onset of the experiment but partridge pea maintained a constant growth rate and eventually exceeded soybean plant size. In spite of these observed differences, partridge pea and soybean plants were equally efficient at reducing acetylene to ethylene. These results indicate partridge pea has the potential to produce as much nitrogen in the field as soybean. Native legumes such as partridge pea deserve further research to explore their use as nurse crops in agricultural or restoration regimes.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Crystal-growth kinetics of protein single crystals along capillary tubes in the gel-acupuncture technique

1999 ◽  
Vol 55 (2) ◽  
pp. 577-580 ◽  
Author(s):  
Abel Moreno ◽  
Manuel Soriano-García
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Capillary Tube ◽  
Crystal Growth Rate ◽  
Equilibrium Studies ◽  
Acta Cryst ◽  
Average Growth ◽  
X Ray Crystallography ◽  
Growing Cell ◽  
Kinetics Of

In attempts to obtain protein crystals of a sufficient size for structural studies, lack of knowledge of the physicochemical properties of protein solutions and of their crystal-growth behaviour lead to a bottleneck for drug design as well as for X-ray crystallography. Most formal investigations on crystal-growth phenomena have been focused on equilibrium studies, where the protein is soluble, and on the kinetics of crystal growth, which is related to both nucleation and crystal-growth phenomena. The aim of this work is to measure the crystal-growth rate along a capillary tube used as a growing cell. These experiments were carried out using the gel-acupuncture technique [García-Ruiz et al. (1993). Mater. Res. Bull. 28, 541–546; García-Ruiz & Moreno (1994). Acta Cryst. D50, 484–490; García-Ruiz & Moreno (1997). J. Cryst. Growth, 178, 393–401]. Crystal-growth investigations took place using lysozyme and thaumatin I as standard proteins. The maximum average growth rate obtained in the lower part of the capillary tube was about 35 Å s−1 and the minimum average growing rate in the upper part of the capillary tube was about 8 Å s−1. The crystal-growth rate as a function of the supersaturation was experimentally estimated at a constant height along the capillary tube.

The Effects of Material Strength, Stress Ratio, and Compressive Overload on the Threshold Behavior of a SAE1045 Steel

1985 ◽  
Vol 107 (1) ◽  
pp. 19-25 ◽  
Author(s):  
M. T. Yu ◽  
T. H. Topper
Keyword(s):  
Mechanical Properties ◽  
Growth Rate ◽  
Threshold Stress ◽  
Stress Ratio ◽  
Peak Load ◽  
Load Level ◽  
Material Strength ◽  
Threshold Stress Intensity ◽  
Threshold Behavior ◽  
Rate Behavior

The fatigue crack growth rate behavior of a SAE1045 steel in the as received condition and four different quenched and tempered conditions was studied as a function of stress ratio and peak compressive overload. The threshold stress intensity behavior of the quenched and tempered conditions was not sensitive to changes of monotonic mechanical properties. The threshold decreased linearly with increasing positive stress ratio and compressive peak load level. As received ferritic-pearlitic SAE1045 steel was much more sensitive to stress ratio and compressive peak load than any of the quenched and tempered conditions studied.

Correlations for Interaction Layer Growth in U-Mo/Al Dispersion Fuels

2017 ◽  
Vol 375 ◽  
pp. 29-39
Author(s):  
Boris A. Tarasov ◽  
Stepan N. Nikitin ◽  
Dmitry P. Shornikov ◽  
Maria S. Tarasova ◽  
Igor I. Konovalov
Keyword(s):  
Growth Rate ◽  
Growth Process ◽  
Aluminum Matrix ◽  
Layer Growth ◽  
Radiation Diffusion ◽  
Fission Rate ◽  
Interaction Layer ◽  
The Matrix ◽  
Mechanism And Kinetics ◽  
Kinetics Of

Paper presents the results of the growth rate of the interaction layer of uranium-molybdenum dispersed fuel in aluminum matrix and influence of silicon alloying on it. The growth process of amorphous interaction layer depends on the radiation diffusion which is proportional to the fission rate in the power of 1⁄4. The alloying of the matrix by silicon does not lead to a change in the mechanism and kinetics of the interaction layer growth, but only slows it down.

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

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