Substrates Effect on the Phase Transition of GaN Thin Films by Sputter Deposition

2019 ◽  
Vol 971 ◽  
pp. 79-84
Author(s):  
Chun Guang Zhang
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Nitrogen Atmosphere ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Pure Nitrogen ◽  
X Ray ◽  
Zinc Blende ◽  
Planar Magnetron ◽  
Pure Nitrogen Atmosphere

As a promising third generation semiconductor material, gallium nitride (GaN) has become a research hotspot in optoelectronic field nowadays. In this paper, GaN thin films were grown by radio frequency (RF) planar magnetron sputtering of a powder GaN target in a pure nitrogen atmosphere at (0.2 – 2.0) Pa, (10 - 100) W onto various substrates such as GaAs (100), Si (100), Si (111), Al2O3(0001) and glass without any buffer layer. A clear phase transition from the metastable cubic zinc-blende (c - ZB) to the stable hexagonal wurtzite (h - WZ) dependence on substrates has been found in the GaN thin films. And the phase transition of GaN films were studied by X-ray diffraction (XRD), photoluminescence (PL) and Raman spectroscopy.

The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

1989 ◽  
Vol 169 ◽  
Author(s):  
K.M. Hubbard ◽  
P.N. Arendt ◽  
D.R. Brown ◽  
D.W. Cooke ◽  
N.E. Elliott ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Film Substrate ◽  
Ion Backscattering ◽  
Scanning Electron

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

Preparation of β-SiAlON Powder at Low Temperature

2007 ◽  
Vol 280-283 ◽  
pp. 1245-1248 ◽  
Author(s):  
Qian Lin Chen ◽  
Jian Qing Wu ◽  
Xian Ping He ◽  
Jian Xin Cao
Keyword(s):  
Electron Microscope ◽  
Average Diameter ◽  
Nitrogen Atmosphere ◽  
X Ray Diffraction ◽  
Pure Nitrogen ◽  
Preparation Temperature ◽  
X Ray ◽  
Sialon Powder ◽  
Holding Temperature ◽  
Scanning Electron

In this article, the β–Sialon with average diameter size less than 20µm is prepared and researched by use of aluminum, silicon, and corundum at 1300°C holding temperature for 8h under nitrogen atmosphere. The preparation temperature of β–Sialon powder was optimized according to the results from the experiments that different aluminum and silicon reacted with pure nitrogen at different temperature. The reaction at the preparation of β–Sialon powder was discussed by thermodynamic calculation. The reaction mechanism was investigated by x–ray diffraction (XRD) and scanning electron microscope (SEM) was discussed in detail.

Preparation and Characterization of Al-Mg-B Thin Films by Magnetron Sputtering

2012 ◽  
Vol 465 ◽  
pp. 112-117 ◽  
Author(s):  
Wen Liu ◽  
Qing Sen Meng ◽  
Yang Miao ◽  
Feng Hua Chen ◽  
Li Fang Hu
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Space Applications ◽  
X Ray ◽  
Atomic Force ◽  
Sputtering Power ◽  
Target Power

Hard and superlight thin films laminated with boron carbide have been proposed as candidates for strategic use such as armor materials in military and space applications. We prepared Al-Mg-B films by sputter deposition on Si (100) substrates with one AlMgB14 target. The films were characterized by X-ray diffraction, atomic force microscope, GD-OES spectroscopy. The results show that films of AlMgB with different compositions have been deposited by changing the target power and deposition temperature.The influences of substrate temperature and sputtering power on the quality of the films are discussed.

Modulus and Internal Friction of W-Doped VO2 Thin Films

2011 ◽  
Vol 130-134 ◽  
pp. 3343-3346 ◽  
Author(s):  
H.Q. Li ◽  
X.X. He ◽  
T. Liu ◽  
Z.H. Nie ◽  
X.Q. Lv
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Internal Friction ◽  
Transition Temperatures ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Metal Phase Transition ◽  
Deposition Techniques

The thin films of W-doped VO2were synthesized onto Mo substrates using reactive DC and RF magnetic co-sputtering deposition techniques. The effects of W dopant on the semiconductor to metal phase transition of bare VO2were investigated with measuring X-ray diffraction (XRD) , QJ31Wheatstone Bridge and the internal friction and modulus vs temperature. The transition temperatures of VO2thin film from monoclinic semiconductor to tetragonal metal are decreased from 68°C to 40°C with the curves of resistance vs temperature and modulus vs temperature. In addition to, the size of grains W-doped VO2is more than that of un-doped VO2, but more smoother.

Mechanical and Structural Behavior of HfN Thin Films Deposited by Direct Current and Mid-Frequency Magnetron Sputtering

2021 ◽  
Vol 21 (7) ◽  
pp. 4125-4128
Author(s):  
Sung-Yong Chun
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Nitrogen Atmosphere ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hafnium Nitride ◽  
Duty Cycles ◽  
Diffraction Patterns

Nanocrystalline HfN thin films were deposited onto silicon substrates with direct current magnetron sputtering (dcMS) and mid-frequency magnetron sputtering (mfMS) by using hafnium metallic target with 3-inch diameter and 99.9% purity in argon/nitrogen atmosphere, under 4 different pulse frequencies and duty cycles. In order to evaluate the structural, morphological and mechanical properties, we used X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), nanoindentation tests. X-ray diffraction patterns show that films sputtered in dcMS mode have a mixed δ-HfN and HfN0.4 phases, whereas mfMS favor a single δ-HfN phase. mfMS leads to films with the higher mechanical hardness and smaller surface roughness than those of films deposited by dcMS. Hafnium nitride films with a single δ-HfN phase show the highest hardness values of 24.5 GPa while those of mixed δ-HfN and HfN0.4 phases show the lowest 18.3 GPa. In summary, the sputtering technique has a crucial role on the properties of the film and can be suitable used to adjust the structure and hardness of HfN films.

Enhancement of the Amorphous to Microcrystalline Phase Transition in Silicon Films Deposited by Sif4-H2-He Plasmas

1998 ◽  
Vol 536 ◽  
Author(s):  
G. Cicalai ◽  
M. Losurdo ◽  
P. Capezzuto ◽  
G. Bruno ◽  
T. Ligonzo ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Electrical Properties ◽  
Low Temperature ◽  
Volume Fraction ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Microcrystalline Silicon ◽  
X Ray ◽  
Plasma Decomposition

AbstractHydrogenated microcrystalline silicon (μc-Si:H) thin films have been obtained by plasma decomposition of SiF4-H2-He mixtures at low temperature (120 °C). The size of crystalline grain and their volume fraction with respect to the amorphous phase have been found dependent on the r.f. power as evaluated by grazing incidence X-ray diffraction, microRaman and ellipsometry measurements. Chemical and electrical properties change according to the microcrystallinity. Pure and/or highly microcrystalline silicon has been obtained at temperature and r.f. power as low as 120 °C and 15 Watt.

Phase transition behavior of BaTiO3 thin films using high-temperature x-ray diffraction

1999 ◽  
Vol 86 (8) ◽  
pp. 4555-4558 ◽  
Author(s):  
Chunling Li ◽  
Zhenghao Chen ◽  
Dafu Cui ◽  
Yueliang Zhou ◽  
Huibin Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
High Temperature ◽  
X Ray Diffraction ◽  
Phase Transition Behavior ◽  
X Ray ◽  
Transition Behavior

Effect of F-doping on temperature dependence of resistivity of vanadium pentoxide thin films prepared by spray pyrolysis

2018 ◽  
Vol 32 (20) ◽  
pp. 1850229
Author(s):  
M. Mousavi ◽  
Gh. Khorami ◽  
A. Kompany ◽  
N. Shahtahmasebi
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Vanadium Pentoxide ◽  
Metallic Phase ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Sem Images ◽  
X Ray ◽  
Transition Change

This paper reports structural and electrical characteristics of F-doped [Formula: see text]V2O5 thin films of different F concentrations. The films were analyzed by X-ray diffraction. It was found that F-doping in vanadium pentoxide affects the crystallinity of the samples. The SEM images have shown that by increasing the F-doping level, the size of the nanobelt increases. Electrical measurements indicated that the F-doping in [Formula: see text]V2O5 makes the temperature of phase transition change from semiconductor to metallic phase.

scholarly journals Capability of X-ray diffraction for the study of microstructure of metastable thin films

IUCrJ ◽  
2014 ◽  
Vol 1 (6) ◽  
pp. 446-456 ◽  
Author(s):  
David Rafaja ◽  
Christina Wüstefeld ◽  
Milan Dopita ◽  
Mykhaylo Motylenko ◽  
Carsten Baehtz
Keyword(s):  
Thin Films ◽  
High Sensitivity ◽  
Nitrogen Atmosphere ◽  
Crystallographic Direction ◽  
Metastable Phases ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Mobility ◽  
Cathodic Arc Evaporation ◽  
Arc Evaporation

Metastable phases are often used to design materials with outstanding properties, which cannot be achieved with thermodynamically stable compounds. In many cases, the metastable phases are employed as precursors for controlled formation of nanocomposites. This contribution shows how the microstructure of crystalline metastable phases and the formation of nanocomposites can be concluded from X-ray diffraction experiments by taking advantage of the high sensitivity of X-ray diffraction to macroscopic and microscopic lattice deformations and to the dependence of the lattice deformations on the crystallographic direction. The lattice deformations were determined from the positions and from the widths of the diffraction lines, the dependence of the lattice deformations on the crystallographic direction from the anisotropy of the line shift and the line broadening. As an example of the metastable system, the supersaturated solid solution of titanium nitride and aluminium nitride was investigated, which was prepared in the form of thin films by using cathodic arc evaporation of titanium and aluminium in a nitrogen atmosphere. The microstructure of the (Ti,Al)N samples under study was tailored by modifying the [Al]/[Ti] ratio in the thin films and the surface mobility of the deposited species.

In Situ Simultaneous Observation of Phase Transition and Electrical Properties of Pb(Zr,Ti)O3 Thin Film by High Temperature XRD and Electrical Measurement Apparatus

2006 ◽  
Vol 320 ◽  
pp. 53-56 ◽  
Author(s):  
Toru Onoue ◽  
Naoki Wakiya ◽  
Koichi Seo ◽  
Takanori Kiguchi ◽  
Nobuyasu Mizutani ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
High Temperature ◽  
Electrical Measurement ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Temperature Xrd ◽  
Phase Transition Temperatures

Pb(Zr0.05Ti0.95)O3/(La,Sr)CoO3 thin films were prepared by pulsed laser deposition (PLD) on SrTiO3(001) substrates. Phase transition behavior of Pb(Zr0.05Ti0.95)O3 (PZT) was investigated using high temperature X-ray diffraction (HT-XRD) and high-temperature electrical measurement. The phase transition temperature of PZT thin film is larger than bulk one. In 100 and 200nm-thickness epitaxial PZT thin films, the phase transition temperatures obtained from X-ray diffraction measurement and electrical property measurement are in good agreement.

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