A New Design and Computer Simulation of a 5-Electrode Ion Extraction/Focusing System

A 13.56 MHz radio-frequency (rf) driven multicusp ion source has been constructed [1] to produce a high argon ion current density. Milliampere-range argon ion current can be extracted from the source. An in-waveguide microwave plasma source has been utilized as the ion beam neutralizer [2]. The neutralization source was placed 20 cm downstream from the extraction system. With the former extraction system, comprised of extraction electrodes and an Einzel lens, the electrons from the neutralizer were attracted to the high positive potential of the lens. Consequently, the potential of the lens drops and the beam is diverged. To suppress electrons from being accelerated to the Einzel lens a negatively biased electrode was placed before the last electrode, which is grounded, to produce a retarding electric field for electrons. The hole of the electrode was made small to make sure that the potential at the center is negative enough to suppress electrons. All simulations have been performed with the KOBRA3-INP simulation software. The results of the beam shape from the simulation will be presented.

Download Full-text

Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100115419 ◽

1975 ◽

Vol 33 ◽

pp. 358-359

Author(s):

M. Spector ◽

A. C. Brown

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Ectodermal Dysplasia ◽

Ion Beam ◽

Freeze Fracture ◽

Ion Current ◽

Ion Beam Etching ◽

Pili Torti ◽

Argon Ion ◽

Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

Download Full-text

Procedure of Predicting the Lifetime of the Accelerating Electrode of an Ion-Extraction System of a Gas-Discharge Ion Source

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ◽

10.1134/s1027451019060041 ◽

2019 ◽

Vol 13 (6) ◽

pp. 1217-1224 ◽

Cited By ~ 1

Author(s):

R. V. Akhmetzhanov ◽

Ye. V. Vorob’ev ◽

D. V. Dukhopel’nikov ◽

S. G. Ivakhnenko ◽

V. A. Obukhov ◽

...

Keyword(s):

Gas Discharge ◽

Ion Source ◽

Extraction System ◽

Ion Extraction

Download Full-text

Microwave plasma source for high current ion beam neutralization

Review of Scientific Instruments ◽

10.1063/1.1150298 ◽

2000 ◽

Vol 71 (2) ◽

pp. 800-803 ◽

Cited By ~ 10

Author(s):

D. Korzec ◽

A. Müller ◽

J. Engemann

Keyword(s):

Microwave Plasma ◽

Ion Beam ◽

Plasma Source ◽

High Current

Download Full-text

Determination of refractive index and thickness of YbF3 thin films deposited at different bias voltages of APS ion source from spectrophotometric methods

Advanced Optical Technologies ◽

10.1515/aot-2017-0072 ◽

2018 ◽

Vol 7 (1-2) ◽

pp. 33-37 ◽

Cited By ~ 2

Author(s):

Yinhua Zhang ◽

Shengming Xiong ◽

Wei Huang ◽

Kepeng Zhang

Keyword(s):

Thin Films ◽

Refractive Index ◽

Bias Voltage ◽

Dispersion Model ◽

Ion Beam ◽

Plasma Source ◽

Ion Source ◽

Monocrystalline Silicon ◽

Silicon Substrates ◽

Spectrophotometric Methods

AbstractYtterbium fluoride (YbF3) single thin films were prepared on sapphire and monocrystalline silicon substrates through conventional thermal evaporation and ion beam-assisted deposition (IAD), at bias voltages ranging from 50 to 160 V of the Leybold advanced plasma source (APS). By using the Cauchy dispersion model, the refractive index and thickness of the YbF3thin films were obtained by fitting the 400–2500 nm transmittance of the monolayer YbF3thin films on the sapphire substrate. At the same time, the refractive index and thickness of the YbF3thin films on the monocrystalline silicon substrates were also measured using the VASE ellipsometer at wavelength from 400 to 2200 nm. The results showed that the refractive index deviation of the YbF3thin films between the fitted values by the transmittance spectra and the measured values by the VASE ellipsometer was <0.02 and the relative deviation of the thickness was <1%. Furthermore, the refractive index of the YbF3thin films increased with increasing APS bias voltage. The conventional YbF3thin films and the IAD thin films deposited at low bias voltage revealed a negative inhomogeneity, and a higher bias voltage is beneficial for improving the homogeneity of YbF3thin films.

Download Full-text

The CERN-MEDICIS Isotope Separator Beamline

Frontiers in Medicine ◽

10.3389/fmed.2021.689281 ◽

2021 ◽

Vol 8 ◽

Author(s):

Yisel Martinez Palenzuela ◽

Vincent Barozier ◽

Eric Chevallay ◽

Thomas E. Cocolios ◽

Charlotte Duchemin ◽

...

Keyword(s):

Ion Beam ◽

Ion Source ◽

Mass Separation ◽

Isotope Separator ◽

Dipole Magnet ◽

Transport Efficiency ◽

Ion Extraction ◽

Magnetic Field Modeling ◽

The Individual ◽

Photo Ionization

CERN-MEDICIS is an off-line isotope separator facility for the extraction of radioisotopes from irradiated targets of interest to medical applications. The beamline, between the ion source and the collection chamber, consists of ion extraction and focusing elements, and a dipole magnet mass spectrometer recovered from the LISOL facility in Louvain-la-Neuve. The latter has been modified for compatibility with MEDICIS, including the installation of a window for injecting laser light into the ion source for resonance photo-ionization. Ion beam optics and magnetic field modeling using SIMION and OPERA respectively were performed for the design and characterization of the beamline. The individual components and their optimal configuration in terms of ion beam extraction, mass separation, and ion transport efficiency is described, along with details of the commissioning and initial performance assessment with stable ion beams.

Download Full-text

Significance of time-of-flight ion energy spectrum on energy deposition into matter by high-intensity pulsed ion beam

Laser and Particle Beams ◽

10.1017/s0263034610000431 ◽

2010 ◽

Vol 28 (3) ◽

pp. 429-436 ◽

Cited By ~ 8

Author(s):

J.P. Xin ◽

X.P. Zhu ◽

M.K. Lei

Keyword(s):

Energy Spectrum ◽

Kinetic Energy ◽

Energy Distribution ◽

High Intensity ◽

Energy Deposition ◽

Ion Beam ◽

Time Of Flight ◽

Ion Source ◽

Ion Current ◽

Ion Energy

AbstractEnergy deposition by high-intensity pulsed ion beam into a metal target has been studied with time-of-flight (TOF) of ions which can be related to the original ion kinetic energy E0 and the ion mass with $t_{\rm TOF} \propto 1/\sqrt{2E_{0}/m_{i}}$. It is found that the TOF effect has a profound influence on the kinetic energy distribution of implanted ions and subsequent energy deposition process into the target. The HIPIB of mixed H+ and C+ was extracted from a magnetically insulated ion diode at a peak accelerating voltage of 350 kV, leading to an ion current density of 300 A/cm2 at the target. The widespread ion energy spectrum remarkably varied in shape as arriving at the target surface, from the original Gaussian-like of 80-ns duration to a pulse form of a sharp front and a long tail extending to about 140-ns duration. Energy loss of the mixed ions into a Ti target was simulated utilizing a Monte Carlo method. The energy deposition generally showed a shallowing trend and could be divided into two phases proceeded with sequent arrivals of H+ and C+. Note that, the peak value of deposited energy profile appeared at the beginning of mixed ion irradiation phase, other than the phase of firstly arrived H+ with peak kinetic energy and peak ion current. This study indicated that TOF effect of ions greatly affects the HIPIB-matter interaction with a kinetic energy spectrum of impinging ions at the target, noticeably differing from that of original output of the ion source; consequently, the specific energy deposition phenomena of the widespread ion energy can be studied with the TOF correlation of ion energy and ion current, otherwise not obtainable in common cases assuming fixed ion energy distribution in accordance with the original source output.

Download Full-text

Site-Specific, Wide Field-of-View Cross-Sectional Sample Preparation, Imaging and Analysis in a Plasma Ion Source Helios DualBeam™ Microscope

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0255 ◽

2014 ◽

Author(s):

Roger Alvis ◽

Ron Kelley

Keyword(s):

Focused Ion Beam ◽

Light Emitting Diode ◽

Ion Beam ◽

Processing System ◽

Plasma Source ◽

Ion Source ◽

Field Of View ◽

Wide Field ◽

Cross Sectional ◽

Wide Field Of View

Abstract A Plasma-source focused ion beam (Helios PFIB) DualBeam™ microscope with sub-nanometer 1kV SEM resolution was used to investigate the structure of a state-of-the-art organic light-emitting diode (OLED) display. The capability of the Helios PFIB to produce and manipulate millimeter-scale samples for wide field-of-view crosssectional SEM analyses was demonstrated by lifting out a 570μm long by 40μm wide x 10μm deep and mounting it on a copper half-grid. An angled face was cut into the chunk and high-resolution back-scattered SEM tiles across the entire exposed face were automatically acquired within a modular automated processing system (MAPS).

Download Full-text