Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies

2009 ◽  
Vol 156-158 ◽  
pp. 129-134 ◽  
Author(s):  
L.I. Murin ◽  
Bengt Gunnar Svensson ◽  
J. Lennart Lindström ◽  
Vladimir P. Markevich ◽  
Charalamos A. Londos
Keyword(s):  
Fourier Transform ◽  
Room Temperature ◽  
Vibrational Mode ◽  
Clear Correlation ◽  
Interstitial Oxygen ◽  
Infrared Absorption Spectroscopy ◽  
Oxygen Defect ◽  
Absorption Bands ◽  
Local Vibrational Mode ◽  
Oxygen Complexes

Fourier transform infrared absorption spectroscopy was used to study the evolution of multivacancy-oxygen-related defects in the temperature range 200-300 °C in Czochralski-grown Si samples irradiated with MeV electrons or neutrons. A clear correlation between disappearance of the divacancy (V2) related absorption band at 2767 cm-1 and appearance of two absorption bands positioned at 833.4 and 842.4 cm-1 at 20 K (at 825.7 and 839.1 cm-1 at room temperature) has been found. Both these two emerging bands have previously been assigned to a divacancy-oxygen defect formed via interaction of mobile V2 with interstitial oxygen (Oi) atoms. The present study shows, however, that the two bands arise from different defects since the ratio of their intensities depends on the type of irradiation. The 842.4 cm-1 band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect (V3O) formed via interaction of mobile V3 with Oi atoms or/and interaction of mobile V2 with VO defects.

scholarly journals Local vibrational modes of vacancy-oxygen-related complexes at room temperature

2020 ◽  
Vol 56 (4) ◽  
pp. 480-487
Author(s):  
E. A. Tolkacheva ◽  
V. P. Markevich ◽  
L. I. Murin
Keyword(s):  
Absorption Band ◽  
Room Temperature ◽  
Clear Correlation ◽  
Ir Absorption ◽  
Oxygen Impurity ◽  
Interstitial Oxygen ◽  
Vibrational Modes ◽  
Oxygen Defect ◽  
Absorption Bands ◽  
Local Vibrational Modes

The isotopic content of natural silicon (28Si (92.23 %), 29Si (4.68 %) и 30Si (3.09 %)) affects noticeably the shape of IR absorption bands related to the oxygen impurity atoms. In the present work an attempt is undertaken to determine the positions of local vibrational modes (LVMs), related to quasimolecules 28Si16OS29Si and 28Si16OS30Si (OS – substitutional oxygen atom), for the absorption spectra measured at room temperature. An estimation of the isotopic shifts of corresponding modes is done by fitting the shape of the experimentally measured absorption band related to the vacancy–oxygen center in irradiated Si crystals. The LVM isotope shifts are found to be equal 2,2 ± 0.25 cm–1 for 28Si-16OS29Si and 4,3 ± 0,9 см–1 for 28Si-16OS30Si in relation to the basic band due to 28Si-16OS28Si, and the full width at half maximum of the A-center absorption band (28Si-16OS28Si) is 5,3 ± 0.25 cm–1. By means of infrared absorption spectroscopy a clear correlation between the disappearance of the divacancy (V2) in the temperature range 200–275 ºС and appearance of two absorption bands with their maxima at 825.8 and 839.2 cm–1 in irradiated oxygen-rich Si crystals is found. The band positioned at 825.8 cm–1 is assigned to a divacancy-oxygen defect V2O formed via an interaction of mobile V2 with interstitial oxygen (Oi ) atoms. The 839.2 cm–1 band is much more pronounced in neutron irradiated samples as compared to samples irradiated with electrons. We argue that it is related to a trivacancy–oxygen defect (V3O) formed via an interaction of mobile V3 with Oi atoms.

Local-vibrational-mode absorption of interstitial oxygen in GaP

1999 ◽  
Vol 273-274 ◽  
pp. 807-810 ◽  
Author(s):  
W Ulrici ◽  
B Clerjaud ◽  
D Côte
Keyword(s):  
Vibrational Mode ◽  
Interstitial Oxygen ◽  
Local Vibrational Mode

Interactions Between Hydrogen and Silicon Acceptors in p-Type GaAs:Si

1987 ◽  
Vol 104 ◽  
Author(s):  
J. Chevallier ◽  
B. Pajot ◽  
A. Jalil ◽  
R. Mostefaoui ◽  
R. Rahbi ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Vibrational Mode ◽  
Microscopic Model ◽  
Infrared Absorption Spectroscopy ◽  
Acceptor Concentration ◽  
Local Vibrational Mode ◽  
Deuterium Concentration ◽  
Sims Analysis ◽  
P Type

ABSTRACTWe show that silicon acceptors can be neutralized in p-type GaAs: Si. SIMS analysis shows that the deuterium concentration closely follows the net acceptor concentration. Infrared absorption spectroscopy reveals lines at 2094.7cm-1 and 1514.5cm-1 in hydrogenated and deuterated samples respectively. The ratio r of the two frequencies is 1.383 indicating that the lines are related to hydrogen isotopes. The reduction of the intensity of the local vibrational mode (LVM) of SiAs after neutralization is consistent with the formation of SiAs-H bonds. From SIMS data, it is concluded that most of the hydrogen present in the passivated material is complexed with silicon. A microscopic model of the Si-H complex is proposed.

scholarly journals Superdiffusion of Carbon by Vacancies Irradiated with Soft X-Rays in CZ Silicon / Superdifūzija Ar Vakancēm Iestarota Ar Mīkstajiem Rentgenstariem CZ Silīcijā

2015 ◽  
Vol 52 (5) ◽  
pp. 68-75
Author(s):  
A. J. Janavičius ◽  
A. Mekys ◽  
R. Purlys ◽  
Ž. Norgėla ◽  
S. Daugėla ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diffusion Theory ◽  
Fast Diffusion ◽  
Interstitial Oxygen ◽  
X Rays ◽  
X Ray ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Thickness Layer ◽  
Oxygen Complexes

Abstract The soft X-ray photons absorbed in the inner K, L, M shells of Si atoms produce photoelectrons and Auger electrons, thus generating vacancies, interstitials and metastable oxygen complexes. The samples of Czochralski silicon crystals covered with 0.1 μm thickness layer of carbon have been irradiated by X-rays using different voltages of Cu anode of the Russian diffractometer DRON-3M. The influence of X-rays on the formation of point defects and vacancy complexes, and their dynamics in Cz-Si crystals have been studied by infrared absorption. We have measured and calculated dynamics of concentration of carbon and interstitial oxygen using FTIR spectroscopy at room temperature after irradiation by soft X-rays. Using transmittance measurements and nonlinear diffusion theory we have calculated densities increasing for substitutional carbon and interstitial oxygen by reactions and very fast diffusion. The superdiffusion coefficients of carbon in silicon at room temperature generated by X-rays are about hundred thousand times greater than diffusion coefficients obtained for thermodiffusion.

VOn (n≥3) Defects in Irradiated and Heat-Treated Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 267-272 ◽  
Author(s):  
L.I. Murin ◽  
J. Lennart Lindström ◽  
Bengt Gunnar Svensson ◽  
Vladimir P. Markevich ◽  
Anthony R. Peaker ◽  
...  
Keyword(s):  
Experimental Data ◽  
Strong Evidence ◽  
Vibrational Mode ◽  
Absorption Bands ◽  
Temperature Range ◽  
Local Vibrational Mode ◽  
Heat Treated

Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-related defects (VOn) in the temperature range 300-700°C in carbon-lean Cz-Si samples irradiated with MeV electrons or neutrons. New experimental data confirming an attribution of the absorption bands at 910, 976 and 1105 cm-1 to the VO3 complex are obtained. In particular, a correlated generation of VO3 and the oxygen trimer is observed upon irradiation of Cz- Si crystals in the temperature range 300-400°C. Strong evidence for the assignment of the bands at 991 and 1014 cm-1 to a VO4 defect is presented. The lines are found to develop very efficiently in the VO2 containing materials enriched with the oxygen dimer. In such materials the formation of VO4 is enhanced due to occurrence of the reaction O2i+VO2 ⇒ VO4. Annealing of the VO3 and VO4 defects at T ≥ 550C °C is found to result in the appearance of new defects giving rise to a number of O-related LVM bands in the range 990-1110 cm-1. These bands are suggested to arise from VO5 and/or VO6 defects. Similar bands also appear upon the annihilation of oxygen-related thermal double donors at 650°C in Cz-Si crystals pre-annealed at 450°C.

Effect of Laser Illumination on Oxidization of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
L. Z. Zhang ◽  
J. C. Mao ◽  
B. R. Zhang ◽  
W. X. Zhu ◽  
Y. L. He ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Porous Silicon ◽  
Power Density ◽  
Vibrational Mode ◽  
Argon Laser ◽  
Blue Shift ◽  
Absorption Bands ◽  
X Ray ◽  
Laser Illumination ◽  
The Times

ABSTRACTWe have studied the effect of laser illumination (argon laser line of 488 nm) on the oxidization process of the inner surfaces of porous silicon (PS) by measuring the photoluminescence (PL), Fourier-transform infrared (FTIR) absorption and x-ray photoelectron spectroscope and contrasted the variations of PL and FTIR spectra of the PS treated in the following four ways: 1. In vacuum with laser illumination (LI) with power density of 12 mW / mm2. 2. In oxygen with LI. 3. In oxygen without LI. The times for all the above three treatments were 1 h. 4. Storage in air for 2 months without LI. The PL peak of PS showed serious degradation and a blue shift in case 2 but only a moderate degradation and no shift in case 1. The results of FTIR absorption show that the LI in an atmosphere of oxygen enhanced greatly the increase of oxygen-related absorption bands and the decrease of various silicon-hydrogen vibrational mode absorption bands.

scholarly journals Interactions of Self-Interstitials with Interstitial Carbon-Interstitial Oxygen Center in Irradiated Silicon: An Infrared Absorption Study

2013 ◽  
Vol 205-206 ◽  
pp. 218-223 ◽  
Author(s):  
Leonid I. Murin ◽  
Bengt Gunnar Svensson ◽  
Vladimir P. Markevich ◽  
Anthony R. Peaker
Keyword(s):  
Annealing Temperature ◽  
Vibrational Mode ◽  
Fast Neutrons ◽  
Interstitial Oxygen ◽  
Absorption Study ◽  
Local Vibrational Mode ◽  
Oxygen Center ◽  
Previous Assignment ◽  
Radiation Induced ◽  
Kinetics Of

The evolution of radiation-induced carbon-oxygen related defects with the fluence of MeV electrons and upon subsequent isochronal annealing (75-350 °C) in Si crystals with different carbon and oxygen content has been studied by means of Local Vibrational Mode (LVM) spectroscopy. In particular, the generation kinetics of the bands at 998 and 991 cm-1 is considered and additional arguments supporting their previous assignment to the I2CiOi and I3CiOi complexes are found. An annealing behaviour of the LVMs related to the C4 (ICiOi) defect has been studied in the various Si crystals irradiated with different particles. In all the samples studied the bands at 940 and 1024 cm-1 are found to disappear at about 200 °C while three new LVM bands, at 724 cm-1 (O-related) and at 952 and 973 cm-1 (both C-related) are emerging. Further increase in annealing temperature up to 250-275 °C results in a transformation of the latter bands into another set of LVM bands at 969 cm-1 (O-related) and at 951 and 977 cm-1 (both C-related). These bands disappear upon annealing in the temperature range 300-325 °C. The ratios of all the bands intensities as well as their transformation rates do not depend on the oxygen and carbon content in the Si samples nor on the kind of irradiation (2.5 and 10 MeV electrons, fast neutrons) and irradiation doses. These facts confirm our previous conclusion that all the above-mentioned LVMs arise from the C4 defect being in different configurations (ICiOi, ICiOi*, and ICiOi**).

Local Vibrations of Substitutional Carbon in SiGe Alloys

2006 ◽  
Vol 514-516 ◽  
pp. 364-368 ◽  
Author(s):  
Lyudmila I. Khirunenko ◽  
Yu.V. Pomozov ◽  
Mikhail G. Sosnin ◽  
Vitor J.B. Torres ◽  
João A.P. Coutinho ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Absorption Band ◽  
Single Crystals ◽  
Vibrational Mode ◽  
Mode Frequency ◽  
Difference Spectra ◽  
Modeling Methods ◽  
Local Vibrational Mode ◽  
The Difference ◽  
Fractional Content

The influence of Ge content on the local vibrational mode of substitutional carbon in Si-rich Si1-xGex single crystals has been investigated by infrared Fourier-transform spectroscopy and ab initio modeling methods. Czochralski-grown Si1-xGex samples doped with boron and carbon have been studied. The Ge fractional content was varied from x=0.004 to x=0.044. To reveal the CS-related absorption band in the Si1-xGex the difference spectra between carbon-lean and carbon-reach Si1-xGex samples with the same Ge content were studied. We have found that the CS-related absorption band in the Si1-xGex alloys red-shifts and broadens with increasing Ge content. It has been found that at x0.015 the CS absorption band consists of two overlapping lines corresponding to different combinations of Si and Ge atoms neighboring the CS atom. The calculations show that substitutional carbon atoms avoid Ge ligand atoms, and should be found in Si-rich regions. These results also reveal that the softening of the CS mode frequency arises from the SiGe volumic expansion.

scholarly journals FTIR study of carbon monoxide adsorption on ion-exchanged X, Y and mordenite type zeolites

2003 ◽  
Vol 68 (4-5) ◽  
pp. 409-416 ◽  
Author(s):  
Vesna Rakic ◽  
Vera Dondur ◽  
Radmila Hercigonja
Keyword(s):  
Carbon Monoxide ◽  
Fourier Transform ◽  
Transition Metal ◽  
Room Temperature ◽  
Ir Absorption ◽  
Transition Metal Cation ◽  
Absorption Bands ◽  
Ftir Study ◽  
Adsorption Of Co ◽  
Charge Balancing

In this work Fourier transform infrared (FTIR) study has been applied to study the adsorption of carbon monoxide on transition metal (Mn2+, Co2 Ni2+) ion-exchanged zeolites type Y, X and mordenites. The adsorption of CO at room temperature produces overlapping IR absorption bands in the 2120?2200 cm-1 region. The frequency of the band around 2200 cm-1 is found to be dependent not only on the charge-balancing transition metal cation but also on the framework composition. The frequencies of the band near 1600 cm-1 was found to be dependent on the Si/Al ratio of the investigated zeolites.

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